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1. Topological electronic structure of YbMg2Bi2 and CaMg2Bi2

2. IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study

3. Ab-initio study of electronic and magnetic properties of Mn$_2$RuZ/MgO (001) heterojunctions (Z= Al, Ga, Si, Ge)

4. Probing the possibility of coexistence of martensite transition and half-metallicity in Ni and Co-based full Heusler Alloys : An ab initio Calculation

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