Search

Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for studying fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electronic systems are difficult to realize experimentally, particularly magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D material embedded in a magnetically ordered environment. The strong 1D electronic character originates from the Cr-S chains and the combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening with an effective electron mass ratio of $m^e_X/m^e_Y \sim 50$. This extreme anisotropy experimentally manifests in strong electron-phonon and exciton-phonon interactions, a Peierls-like structural instability and a Fano resonance from a van Hove singularity of similar strength of metallic carbon nanotubes. Moreover, due to the reduced dimensionality and interlayer coupling, CrSBr hosts spectrally narrow (1 meV) excitons of high binding energy and oscillator strength that inherit the 1D character. Overall, CrSBr is best understood as a stack of weakly hybridized monolayers and appears to be an experimentally attractive candidate for the study of exotic exciton and 1D correlated many-body physics in the presence of magnetic order., main: 16 pages, 5 figures; SI: 15 pages, 9 figures

In contrast to the intensively investigated transition metal dichalcogenides like MoS2, ReS2 crystals possess a reduced in-plane symmetry, leading to anisotropic optical properties. Here, we report on the impact of strain on the Raman response of a ReS2 monolayer. Since mechanical strain can be used to shift the Raman-active phonon frequencies, we apply uniaxial tensile strain of up to 0.74% along the Re-chain direction (x axis) of the atomically thin crystal and measure the Raman response with the scattered light polarized parallel and perpendicular to the strain direction along the x axis. Complementarily, we carry out ab initio calculations to determine the phonon energies and Raman intensities under strain. We find a shift to lower energies for all phonon modes when tensile strain is applied to the monolayer. The determined gauge factors/Grüneisen parameters are in good agreement between experiment and theory. Our study demonstrates that the optomechanical properties of ReS2 can be tuned by external straining, which is of importance for potential future strain-sensor applications, e.g., in the biomedical sector.

The C2DB is a highly curated open database organizing a wealth of computed properties for more than 4000 atomically thin two-dimensional (2D) materials. Here we report on new materials and properties that were added to the database since its first release in 2018. The set of new materials comprise several hundred monolayers exfoliated from experimentally known layered bulk materials, (homo)bilayers in various stacking configurations, native point defects in semiconducting monolayers, and chalcogen/halogen Janus monolayers. The new properties include exfoliation energies, Bader charges, spontaneous polarisations, Born charges, infrared polarisabilities, piezoelectric tensors, band topology invariants, exchange couplings, Raman- and second harmonic generation spectra. We also describe refinements of the employed material classification schemes, upgrades of the computational methodologies used for property evaluations, as well as significant enhancements of the data documentation and provenance. Finally, we explore the performance of Gaussian process-based regression for efficient prediction of mechanical and electronic materials properties. The combination of open access, detailed documentation, and extremely rich materials property data sets make the C2DB a unique resource that will advance the science of atomically thin materials., Comment: 30 pages, 26 figures

We perform absorption and photoluminescence spectroscopy of trions in hBN-encapsulated WSe$_2$, WS$_2$, MoSe$_2$, and MoS$_2$ monolayers, depending on temperature. The different trends for W- and Mo-based materials are excellently reproduced considering a Fermi-Dirac distribution of bright and dark trions. We find a dark trion, $\rm{X_D^-}$ 19 meV $\textit{below}$ the lowest bright trion, $\rm{X}_1^-$ in WSe$_2$ and WS$_2$. In MoSe$_2$, $\rm{X_D^-}$ lies 6 meV $\textit{above}$ $\rm{X}_1^-$, while $\rm{X_D^-}$ and $\rm{X}_1^-$ almost coincide in MoS$_2$. Our results agree with GW-BSE $\textit{ab-initio}$ calculations and quantitatively explain the optical response of doped monolayers with temperature., Comment: 16 pages including supporting information, 4 figures in the main text, 10 figures in the supporting information

We present an extension of the tunneling theory for scanning tunneling microcopy (STM) to include different types of vibrational-electronic couplings responsible for inelastic contributions to the tunnel current in the strong-coupling limit. It allows for a better understanding of more complex scanning tunneling spectra of molecules on a metallic substrate in separating elastic and inelastic contributions. The starting point is the exact solution of the spectral functions for the electronic active local orbitals in the absence of the STM tip. This includes electron-phonon coupling in the coupled system comprising the molecule and the substrate to arbitrary order including the anti-adiabatic strong coupling regime as well as the Kondo effect on a free electron spin of the molecule. The tunneling current is derived in second order of the tunneling matrix element which is expanded in powers of the relevant vibrational displacements. We use the results of an ab-initio calculation for the single-particle electronic properties as an adapted material-specific input for a numerical renormalization group approach for accurately determining the electronic properties of a NTCDA molecule on Ag(111) as a challenging sample system for our theory. Our analysis shows that the mismatch between the ab-initio many-body calculation of the tunnel current in the absence of any electron-phonon coupling to the experiment scanning tunneling spectra can be resolved by including two mechanisms: (i) a strong unconventional Holstein term on the local substrate orbital leads to reduction of the Kondo temperature and (ii) a different electron-vibrational coupling to the tunneling matrix element is responsible for inelastic steps in the $dI/dV$ curve at finite frequencies., 34 pages, 26 figure

We have performed a computational screening of topological two-dimensional (2D) materials from the Computational 2D Materials Database (C2DB) employing density functional theory. A full ab initio scheme for calculating hybrid Wannier functions directly from the Kohn-Sham orbitals has been implemented and the method was used to extract Z2 indices, Chern numbers, and mirror Chern numbers of 3331 2D systems including both experimentally known and hypothetical 2D materials. We have found a total of 48 quantum spin Hall insulators, seven quantum anomalous Hall insulators, and 21 crystalline topological insulators. Roughly 75% are predicted to be dynamically stable and one-third was known prior to the screening. The most interesting of the topological insulators are investigated in more detail. We show that the calculated topological indices of the quantum anomalous Hall insulators are highly sensitive to the approximation used for the exchange-correlation functional and reliable predictions of the topological properties of these materials thus require methods beyond density functional theory. We also performed GW calculations, which yield a gap of 0.65 eV for the quantum spin Hall insulator PdSe2 in the MoS2 crystal structure. This is significantly higher than any known 2D topological insulator and three times larger than the Kohn-Sham gap.

In his comment Maździarz 2019 (2D Mater. 6 048001) raises doubts concerning the reliability of our test for dynamical (in particular elastic) stability of monolayer materials, which neglects the shear components of the stiffness tensor and only considers the sign of the planar stiffness coefficients. We agree that our analysis has not been complete, but find that it suffices in practice except for very few cases (less than 1% of the materials). Nevertheless, for completeness we are currently calculating the shear components of the elastic tensor for all the materials in the C2DB.

We study the neutral and charged optical excitations (excitons and trion) in the prototypical wide-gap insulator LiF using the first-principles $GW/\mathrm{BSE}$ approach and its extension for trions. In addition to neutral excitons we find bound trion states with a trion binding energy of 20--30 meV. At the same time the lowest bright exciton and trion are well separated by about 400 meV in the absorption spectrum both for the bulk and the (001) surface crystal. Even though the charged trions are slightly more extended compared to their neutral counterparts, they remain localized on a few atoms only and keep the Frenkel-like character of the neutral excitons. With such strongly localized trions, LiF stands out from currently investigated trionic materials and highlights itself for further studies.

Monolayers of transition metal dichalcogenides (TMDCs) have unique optoelectronic properties. Density functional theory allows only for a limited description of the electronic excitation energies in these systems, while a more advanced treatment within many-body perturbation theory employing the $\mathit{GW}/\mathrm{BSE}$ approximation is often rather time consuming. Here, we show that the recently developed $\mathrm{LDA}+\mathit{GdW}$ approach provides an efficient and at the same time reliable description of one-particle energies, as well as optical properties including bound excitons in TMDCs. For five exemplary materials (${\mathrm{MoSe}}_{2}, {\mathrm{MoS}}_{2}, {\mathrm{WSe}}_{2}, {\mathrm{WS}}_{2}$, and ${\mathrm{ReSe}}_{2}$), we discuss the numerical convergence, in particular with respect to k-point sampling, and show that the $\mathit{GdW}/\mathrm{BSE}$ approximation gives results similar to common $\mathit{GW}/\mathrm{BSE}$ calculations. Such efficient approaches are essential to treat larger multilayer systems or defects.

Bound electron–hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose–Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures., Excitons, quasi-particles of bound electron-hole pairs, are at the core of the optoelectronic properties of layered transition metal dichalcogenides. Here, the authors unveil the presence of interlayer excitons in bulk van der Waals semiconductors, arising from strong localization and spin-valley coupling of charge carriers.

Due to their unique band structure, single layers of transition metal dichalcogenides are promising for new atomic-scale physics and devices. It has been shown that the band structure and the excitonic transitions can be tuned by straining the material. Recently, the discovery of single-photon emission from localized excitons has put monolayer WSe2 in the spotlight. The localized light emitters might be related to local strain potentials in the monolayer. Here, we measure strain-dependent energy shifts for the A, B, C, and D excitons for uniaxial tensile strain up to 1.4% in monolayer WSe2 by performing absorption measurements. A gauge factor of and is derived for the A, B, C, and D exciton, respectively. These values are in good agreement with ab initio GW-BSE calculations. Furthermore, we examine the spatial strain distribution in the WSe2 monolayer at different applied strain levels. We find that the size of the monolayer is crucial for an efficient transfer of strain from the substrate to the monolayer.

We introduce the Computational 2D Materials Database (C2DB), which organises a variety of structural, thermodynamic, elastic, electronic, magnetic, and optical properties of around 1500 two-dimensional materials distributed over more than 30 different crystal structures. Material properties are systematically calculated by state-of-the art density functional theory and many-body perturbation theory (G$_0\!$W$\!_0$ and the Bethe-Salpeter Equation for $\sim$200 materials) following a semi-automated workflow for maximal consistency and transparency. The C2DB is fully open and can be browsed online or downloaded in its entirety. In this paper, we describe the workflow behind the database, present an overview of the properties and materials currently available, and explore trends and correlations in the data. Moreover, we identify a large number of new potentially synthesisable 2D materials with interesting properties targeting applications within spintronics, (opto-)electronics, and plasmonics. The C2DB offers a comprehensive and easily accessible overview of the rapidly expanding family of 2D materials and forms an ideal platform for computational modeling and design of new 2D materials and van der Waals heterostructures., Comment: Add journal reference and DOI; Minor updates to figures and wording

Monolayers and bilayers of transition metal dichalcogenides (TMDCs) are currently being intensively scrutinized not least due to their rich opto-electronic properties which are governed by strongly bound excitons. Until now the main focus has been on excitons with zero momentum. In this study we employ ab initio many-body perturbation theory within the GW/BSE approximation to describe the entire Q-resolved exciton band structure for mono- and bilayers of the MX2 (M = Mo, W and X = Se, S) TMDCs. We find that the strong excitonic effects, i.e. strong electron-hole interactions, are present throughout the entire Q-space. While the exciton binding energies of the lowest excitons do not vary significantly with Q, we find a strong variation in their coupling strength. In particular, the latter are strongly peaked for excitons at Q = 0 and Q = Λ. For MoX2 monolayers the K → K' excitons constitutes the exciton ground state, while in WX2 monolayers direct transitions at K are lowest in energy. Our calculations further show that the exciton landscape is highly sensitive to strain and interlayer hybridization. For all four bilayers the exciton ground state is shifted to Γ → Λ or K → Λ transitions closely following the trends of the single-particle band structures.