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The advancement in material platforms exhibiting strong and robust electro-optic effects is crucial for further progress in developing highly efficient and miniaturized optoelectronic components with low power consumption for modern optical communication systems. In this work, we investigate thin-film lead zirconate titanate (PZT) substrates grown by a chemical solution deposition technique as a potential platform for on-chip plasmonic electro-optic modulators. A high modulation depth (>40 %) is achieved with 15 μm-long electro-optic directional coupler modulators. An unusual cutoff in the modulation frequency response at ∼200 kHz is observed and further studied with respect to possible reorientation effects. Second-harmonic generation signals are found influenced by the externally applied electric field, indicating that the domain reorientation effect can be responsible for the unusual frequency response observed.

The demand on broadband near-infrared photodetections with high responsivity is becoming increasingly eminent; however its realization remains a significant technological challenge. Here we design, fabricate, and characterize a broadband Ge photodetector (1000–1600 nm), composed of densely packed 230-nm-thick Ge disks of different diameters (255 nm, 320 nm, and 500 nm), placed on top of a 105-nm-thin Ge layer. Using experimentally measured and calculated transmission and absorption spectra, we demonstrate that the absorption and detector responsivity are increased by nearly 2 orders of magnitude, compared to the unstructured Ge photodetector, due to the excitation of magnetic dipole resonances in Ge disks, while preserving a relatively low dark current. Our approach is simple and can be easily adapted to other semiconductor material platforms and operation wavelengths to enable performance improvements of broadband photodetector devices.

Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for sensing, imaging, communication, and optical computing systems to convert optical signals to electrical signals. Here we experimentally show a novel combination of topological insulators (TIs) and transition metal chalcogenides (TMDs) based self-powered photodetectors with ultra-low dark current and high sensitivity. The photodetector formed by a MoS2/Sb2Te3 heterogeneous junction exhibits a low dark current of 2.4 pA at zero bias and 1.2 nA at 1V. It shows a high photoresponsivity of >150 mA W−1 at zero bias and rectification of 3 times at an externally applied bias voltage of 1V. The excellent performance of the proposed photodetector with its innovative material combination of TMDs and TIs paves the way for the development of novel high-performance optoelectronic devices. The TIs/TMDs transfer used to form the heterojunction is simple to incorporate into on-chip waveguide systems, enabling future applications on highly integrated photonic circuits.

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W−1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits. [ABSTRACT FROM AUTHOR]

Nonlinear and bistable optical systems are a key enabling technology for the next generation optical networks and photonic neural systems with many potential applications in optical logic and information processing. Here, a novel bistable resonator-free all-optical waveguide device based on indium tin oxide as nonlinear epsilon-near-zero material providing a cost-efficient and high-performance binarity photonic platform is proposed. The salient features of the proposed device are compatibility with silicon photonics, enabling sub-picosecond operation speeds with moderate switching power. The device can act as an optical analogue of memristor or thyristor and can become an enabling element of photonic neural networks not requiring OEO conversions. [ABSTRACT FROM AUTHOR]

Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for sensing, imaging, communication, and optical computing systems to convert optical signals to electrical signals. Here we experimentally show a novel combination of topological insulators (TIs) and transition metal chalcogenides (TMDs) based self-powered photodetectors with ultra-low dark current and high sensitivity. The photodetector formed by a MoS2/Sb2Te3 heterogeneous junction exhibits a low dark current of 2.4 pA at zero bias and 1.2 nA at 1V. It shows a high photoresponsivity of >150 mA W−1 at zero bias and rectification of 3 times at an externally applied bias voltage of 1V. The excellent performance of the proposed photodetector with its innovative material combination of TMDs and TIs paves the way for the development of novel high-performance optoelectronic devices. The TIs/TMDs transfer used to form the heterojunction is simple to incorporate into on-chip waveguide systems, enabling future applications on highly integrated photonic circuits. [ABSTRACT FROM AUTHOR]

Two-photon photoemission electron microscopy (2P-PEEM) is used to measure the real and imaginary part of the dispersion relation of surface plasmon polaritons at different interface systems. A comparison of calculated and measured dispersion data for a gold/vacuum interface demonstrates the capability of the presented experimental approach. A systematic 2P-PEEM study on the dispersion relation of dielectric-loaded gold surfaces shows how effective the propagation of surface plasmon polaritons at a gold/ para-hexaphenylene interface can be tuned by adjustment of the dielectric film thickness. Deviations of the experimental results from effective index calculations indicate the relevance of thin film peculiarities arising from the details of the growth process and corroborate the need of experimental analysis techniques for dispersion relation measurements. [ABSTRACT FROM AUTHOR]

Metal-semiconductor-metal plasmonic nanostructures enable both on-chip efficient manipulation and ultrafast photodetection of strongly confined modes by enhancing local electrostatic and optical fields. The latter is achieved by making use of nanostructured thin-film germanium (Ge) plasmonic-waveguide photodetectors. While their sizes and locations can be accurately controlled during the nanofabrication, the detector efficiencies are significantly reduced due to deposited Ge amorphous nature. We demonstrate that the efficiency of waveguide-integrated Ge plasmonic photodetectors can be increased significantly (more than 2 orders of magnitude) by spatially controlled laser-induced Ge crystallization. We investigate both free-space and waveguide-integrated Ge photodetectors subjected to 800 nm laser treatment, monitoring the degree of crystallization with Raman spectroscopy, and demonstrate the efficiency enhancement by detecting the telecom radiation. The demonstrated local postprocessing technique can be utilized in various nanophotonic devices for efficient and ultrafast on-chip radiation monitoring and detection, offering significantly improved detector characteristics without jeopardizing the performance of other components.