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We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1$T$-HfTe$_2$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe$_2$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe$_2$, with dispersion perpendicular to the plane. In contrast, the band structure of heavily K-dosed HfTe$_2$ is obviously different from that of bulk, and resembles the band structure calculated for monolayer HfTe$_2$. It was also observed that lightly K-dosed HfTe$_2$ is characterized by quantized bands originating from bilayer and trilayer HfTe$_2$, indicative of staging. The results suggest that the dimensionality-crossover from 3D (dimensional) to 2D electronic states due to systematic K intercalation takes place via staging in a single sample. The study provides a new strategy for controlling the dimensionality and functionality of novel quantum materials., 7 pages, 4 figures

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nanoislands (1–3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nanoislands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.

Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [Sci. Rep. 6, 27266 (2016); ref. 2] can be explained by locating the Fermi level EF above the valence-band top, supporting the impurity-band model of ferromagnetic (Ga,Mn)As. In this comment, we show that the assignment of bands' positions in respect to EF by Kobayashi et al. is not consistent with our data. By comparing the ARPES result to band-structure calculations, we demonstrate clearly that EF resides inside the valence band in accordance with the p-d Zener model., 5 pages, 1 figure

We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the Z point, produced by the direct hole doping into the valence band. The Dirac-cone surface state is well isolated from the bulk bands, and the surface chemical potential is variable in the entire band-gap range. Tl0.5Bi2Te3 thus provides an excellent platform to realize two-dimensional topological superconductivity through a proximity effect from the superconducting bulk. Also, the observed Fermi-surface topology provides a concrete basis for constructing theoretical models for bulk topological superconductivity in hole-doped topological insulators., 5 pages, 4 figures (paper proper) + 1 pages, 1 figures (supplemental material); final version accepted for publication in PRB Rapid Communication

We have performed angle-resolved photoemission spectroscopy on HfSiS, which has been predicted to be a topological line-node semimetal with square Si lattice. We found a quasi-two-dimensional Fermi surface hosting bulk nodal lines, alongside the surface states at the Brillouin-zone corner exhibiting a sizable Rashba splitting and band-mass renormalization due to many-body interactions. Most notably, we discovered an unexpected Dirac-like dispersion extending one-dimensionally in k space - the Dirac-node arc - near the bulk node at the zone diagonal. These novel Dirac states reside on the surface and could be related to hybridizations of bulk states, but currently we have no explanation for its origin. This discovery poses an intriguing challenge to the theoretical understanding of topological line-node semimetals., 5 pages, 4 figures (paper proper) + 2 pages, figures (supplemental material)

We have performed angle-resolved photoemission spectroscopy (ARPES) on Cux(PbSe)5(Bi2Se3)6 (CPSBS; x = 1.47), a superconductor derived from a topological insulator heterostructure, to elucidate the electronic states relevant to the occurrence of possible unconventional superconductivity. Upon Cu intercalation into the parent compound (PbSe)5(Bi2Se3)6, we observed a distinct energy shift of the bulk conduction band due to electron doping. Photon-energy dependent ARPES measurements of CPSBS revealed that the observed bulk band forms a cylindrical electronlike Fermi surface at the Brillouin-zone center. The two-dimensional nature of the bulk electronic states suggests the occurrence of odd-parity Eu pairing or even-parity d-wave pairing, both of which may provide a platform of Majorana bound states in the superconducting state., 5 pages, 3 figures

We have performed angle-resolved photoemission spectroscopy of the strongly spin-orbit coupled low-carrier density superconductor Sn1-xInxTe (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity recently reported for this compound from point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface centered at the L point of the bulk Brillouin zone, together with a signature of a topological surface state which indicates that this superconductor is essentially a doped topological crystalline insulator characterized by band inversion and mirror symmetry. A comparison of the electronic states with a band-non-inverted superconductor possessing a similar Fermi surface structure, Pb1-xTlxTe, suggests that the anomalous behavior in the superconducting state of Sn1-xInxTe is likely to be related to the peculiar orbital characteristics of the bulk valence band and/or the presence of a topological surface state., 5 pages, 4 figures

We performed an angle-resolved photoemission spectroscopy study of Si-doped $\beta$-Ga$_2$O$_3$. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material., Comment: 4 pages, 4 figures. Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/resource/1/applab/v101/i23/p232105_s1

We have performed angle-resolved photoemission spectroscopy on Pb(Bi1-xSbx)2Te4, which is a member of lead-based ternary tellurides and has been theoretically proposed as a candidate for a new class of three-dimensional topological insulators (TIs). In PbBi2Te4, we found a topological surface state with a hexagonally deformed Dirac-cone band dispersion, indicating that this material is a strong TI with a single topological surface state at the Brillouin-zone center. Partial replacement of Bi with Sb causes a marked change in the Dirac carrier concentration, leading to the sign change of Dirac carriers from n-type to p-type. The Pb(Bi1-xSbx)2Te4 system with tunable Dirac carriers thus provides a new platform for investigating exotic topological phenomena., 5 pages, 4 figures

We have performed high-resolution angle-resolved photoemission spectroscopy on heavily overdoped KFe_2As_2 (transition temperature (Tc = 3 K). We observed several renormalized bands near the Fermi level with a renormalization factor of 2-4. While the Fermi surface (FS) around the Brillouin-zone center is qualitatively similar to that of optimally-doped Ba_{1-x}K_xFe_2As_2 (x = 0.4; Tc = 37 K), the FS topology around the zone corner (M point) is markedly different: the two electron FS pockets are completely absent due to excess of hole doping. This result indicates that the electronic states around the M point play an important role in the high-Tc superconductivity of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ and suggests that the interband scattering via the antiferromagnetic wave vector essentially controls the Tc value in the overdoped region., 4 pages, 4 figures

We have performed an angle-resolved photoemission spectroscopy study of the new superconductor Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ in the low energy range. We report the observation of an anomaly around 25 meV in the dispersion of superconducting Ba$_{0.6}$K$_{0.4}$Fe$_2$As$_2$ samples that nearly vanishes above $T_c$. The energy scale of the related mode (13$\pm$2 meV) and its strong dependence on orbital and temperature indicates that it is unlikely related to phonons. Moreover, the momentum locations of the kink can be connected by the antiferromagnetic wavevector. Our results point towards an unconventional electronic origin of the mode and the superconducting pairing in the Fe-based superconductors, and strongly support the anti-phase s-wave pairing symmetry., 4 pages, 3 figures

We have carried out high-resolution angle-resolved photoemission spectroscopy (ARPES) to study the electronic structure of highly metallic NaxWO3 (x=0.58, 0.65, 0.7, and 0.8). The experimentally determined valence-band structure has been compared with the results of an ab initio band-structure calculation. While the presence of an impurity band (level) induced by Na doping is often invoked to explain the insulating state found at low concentrations, we find no signature of impurity band (level) in the metallic regime. The states near EF are populated and the Fermi edge shifts rigidly with increasing electron doping (x). The linear dispersion of the conduction band explains the linear variation of thermodynamic properties including the specific heat and magnetic susceptibility. The presence of an electron-like Fermi surface at �(X) and its evolution with increasing Na content and the rigid shift of the Fermi level with increasing x agrees well with the band calculation. ? 2005 The American Physical Society.