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Herein, time‐integrated and time‐resolved photoluminescence (PL) measurement experiments are performed on coupled GaAs quantum dot (QD) molecules with larger laser spot size and a single‐coupled QD molecule to investigate the dynamics of exciton states. A linearly polarized laser along the coupled direction of a laterally‐coupled GaAs QD molecule [11¯$\overset{\cdot}{1}$0] is used to determine the coupling effects of the different exciton states. For the ensemble of coupled QD molecules, the exciton PL peak shifts to lower energy (≈70 meV) and shows a linear increase in the PL intensity, demonstrating the properties of exciton states as a function of the laser excitation power. In addition, a power‐dependent redshift is observed in the single‐coupled GaAs QD molecule as a function of the excitation power; however, the two distinguished exciton states become resolved and show different power factors when the laser excitation power is linearly increased. This result clearly indicates the presence of energy transfer between the two different exciton states, X1 and X2. Furthermore, when the polarized laser excitation power is increased, a coupled biexciton consisting of two different localized exciton states (X1 and X2) is clearly observed, and a power‐dependent spectral redshift is detected in the exciton and biexciton states. At a high excitation power (15 I0), the decay times of the two different localized exciton states clearly show different lifetimes; and the decay time difference due to the size difference can be ignored at a low excitation power. Theoretically, the decay times of the two different exciton states, wherein the size deviation can be ignored, should be the same. Based on the results of the time‐integrated and time‐resolved PL measurements and the comparison between the ensemble and single exciton PL peaks, it is concluded that the coupling process in laterally‐coupled GaAs QD molecules is strongly supported against long‐range separation. [ABSTRACT FROM AUTHOR]

We introduce a novel method for fabricating perovskite solar modules using selective spin-coating on various Au/ITO patterned substrates. These patterns were engineered for two purposes: (1) to enhance selectivity of monolayers primarily self-assembling on the Au electrode, and (2) to enable seamless interconnection between cells through direct contact of the top electrode and the hydrophobic Au connection electrode. Utilizing SAMs-treated Au/ITO, we achieved sequential selective deposition of the electron transport layer (ETL) and the perovskite layer on the hydrophilic amino-terminated ITO, while the hole transport layer (HTL) was deposited on the hydrophobic CH3-terminated Au connection electrodes. Importantly, our approach had a negligible impact on the series resistance of the solar cells, as evidenced by the measured specific contact resistivity of the multilayers. A significant outcome was the production of a six-cell series-connected solar module with a notable average PCE of 8.32%, providing a viable alternative to the conventional laser scribing technique. [ABSTRACT FROM AUTHOR]

Magnitude is one of the fundamental parameters of earthquake and also one of the essential information for earthquake early warning (EEW). Rapidly and accurately determining the high-or low-magnitude event is important for mitigating the damage of earthquake hazard. To address the problem of predicting whether an earthquake event is high magnitude ($M \ge5.5$) or low magnitude ($M < 5.5$), this letter proposes a machine learning magnitude classification framework (MCFrame) using single station data, which consists of feature extraction module and magnitude classifier, and we train the feature extraction module of MCFrame to learn the characteristics of high-magnitude ($M \ge5.5$) and low-magnitude ($M < 5.5$) earthquake events, using strong-motion records collected from the Japanese Kyoshin network (K-NET) seismic network. Then, the extracted features are used as an input of magnitude classifier to classify earthquake magnitudes. Meanwhile, we analyze the impact of three different magnitude classifiers on the performance of MCFrame, which include the deep neural network (DNN), support vector machine (SVM), and random forest (RF). We show that within 5 s after the P-wave arrival, for these three different classifiers, the magnitude classification accuracy of MCFrame is close, and the MCFrame proposed in this work has a better performance than baseline models for magnitude classification. Additionally, for the MCFrame, the accuracy of high-magnitude events ($M \ge5.5$) is more than 90%, and the accuracy of low-magnitude events ($M < 5.5$) is more than 99%. These results indicate that the MCFrame proposed in this work is significant for EEW. [ABSTRACT FROM AUTHOR]

Pellets, as a clean and renewable energy source, can overcome the shortcomings of high moisture content, expensive transportation costs, and non-uniform sizes for agricultural residues. However, traditional pelleting methods are associated with high energy consumption and severe mold abrasion due to the application of high temperature and pressure. To address these issues while improving pellet solid density and durability, urea pretreatment combined with ultrasonic vibration-assisted (UV-A) pelleting is investigated in the present research. Comparative experiments were initially conducted to verify the feasibility of the approach, followed by a central composite rotatable design (CCRD) to investigate the relative contributions and interactions of tested variables on pellet solid density and durability during pretreatment. The results revealed that combining urea pretreatment with UV-A pelleting could enhance pellet solid density and durability. Urea content, temperature, waste soybean flour (WSF) content, and distilled water significantly impacted pellet solid density, and all variables except distilled water had a significant effect on pellet durability. The optimal conditions were determined and a subsequent experiment was conducted to verify the agreement between experimental data and predicted results. The optimal conditions consisted of 42% distilled water, temperature of 45 °C, 10% urea content, and 12% WSF content resulting in pellet solid density and durability values of 1438.28 kg m−3 and 98.67%, respectively. [ABSTRACT FROM AUTHOR]

Localized states in an anisotropic single GaAs quantum ring were investigated in terms of polarization dependence of micro-photoluminescence spectrum at 5K. Given four Stokes parameters measured with a pair of linear polarizers and waveplates, the elliptical polarization states of two different vertical confinement states ( k = 1 and k = 2 ) were compared with phase, rotation, and ellipticity angles. While the polarized emission intensity of the k = 2 states becomes enhanced along [1,1,0] compared to that along [1, 1 ¯ ,0], the polarization asymmetry of the k = 1 states shows the opposite result. We conclude the polarization state is determined by the shape of the lateral wavefunctions. In the k = 2 state, crescent-like wavefunctions are strongly localized, but the k = 1 state consists of two crescent-like wavefunctions, which are connected weakly through quantum tunneling. [ABSTRACT FROM AUTHOR]

SUMMARY: To rapidly and accurately provide alerts at target sites near the epicentre, we develop an on-site alert-level earthquake early warning (EEW) strategy involving P -wave signals and machine-learning-based prediction equations. These prediction equations are established for magnitude estimation and peak ground velocity (PGV) prediction accounting for multiple feature inputs and the support vector machine (SVM). These prediction equations are called SVM-M model for estimating magnitude and SVM-PGV model for predicting PGV, respectively. According to comparison between the predicted magnitude and PGV values with the predicted threshold values (M = 5.7 and PGV = 9.12 cm s–1, respectively), different alert level (0, 1, 2, 3) is issued at the different recording site when the predicted magnitude or PGV values exceed the given threshold values. Alert level 3 means that both the predicted magnitude and the predicted PGV exceed a given threshold, and there may be serious damage in this recording site. We apply the method to three destructive earthquake events (M ≥ 6.5) occurred in Japan, and our results indicate that with regard to the performance of SVM-PGV model for predicting PGV, at 3 s after P -wave arrival, the percentage of successful alarms (SAs) for these three events is higher than 95, 73 and 94 per cent, respectively, and the percentage of false alarms approaches 0. Additionally, with regard to the performance of SVM-M model for estimating magnitude, at 3 s after P -wave arrival, the percentage of SAs for these three events exceeds 95 per cent, and the percentage of missed alarms approaches 0. Moreover, almost all stations in the areas PGV ≥ 16 cm s–1 (IMM ≥ VII) near the epicentre issue alert level 3. The proposed method provides potential applications in EEW system. [ABSTRACT FROM AUTHOR]

The parallelization of single-electron pumps is a promising method to increase the quantized current level produced from a semiconductor-based single-electron system. In the parallelization of multiple pumps with common gate electrodes, the key process is to fabricate them with high reproducibility, resulting in an overlap of the most accurate regions in current plateaus at the same gate voltages. However, because of the lack of gating reproducibility, we here adopted a separate gate-tuning scheme to realize the overlap of the current plateaus instead of using a common gate scheme. To minimize the number of gates, we used entrance gates in common but an exit gate in separate with an additional in-common gate located outside the quantum dot but near the exit gates. The combination of the additional gate and separate exit gates led to an optimal current plateau overlap with a pair of pumps among six pumps in parallel. Under the optimal plateau-tuned condition, we achieved a relative type-A uncertainty of 1.4 × 10−6 at a 100 pA level with f = 160 MHz in the parallelized mode with the second current plateaus for both pumps. [ABSTRACT FROM AUTHOR]

Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH3 pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors. [ABSTRACT FROM AUTHOR]

Si optical phase shifters are key components for efficient phase modulation utilizing carrier modulation. Among many structures for carrier modulation in them, a semiconductor-insulator-semiconductor (SIS) capacitor can achieve high phase modulation efficiency because of its large carrier accumulation. However, due to the limitation caused by relatively small plasma dispersion in Si, its size and voltage for the $\pi $ phase shift are large to integrate into conventional CMOS technology. To enhance its phase modulation efficiency, material engineering of a SIS capacitor is indispensable. Although semiconductor engineering has been proved to realize efficient phase modulation, there are few reports on the insulator engineering of a SIS capacitor for efficient phase modulation. Therefore, we have introduced new functionalities for a SIS optical phase shifter using insulator engineering. In this paper, we have investigated the charge enhancement effect in a SIS capacitor with ferroelectric (FE) materials utilized by the negative capacitance (NC) effect. We will discuss the design of an NC SIS optical phase modulator to enhance this effect for a new efficient phase modulation scheme. [ABSTRACT FROM AUTHOR]

We have employed a variable stripe length method in order to measure the optical gain of GaAs/AlGaAs quantum rings. Although the large lateral diameter of quantum rings (∼ 50 nm) with a few nm size distribution is expected to cause a small spectral inhomogeneity (∼ 1 %), a broad gain width (∼ 300 meV) was observed. This result was attributed to a variation of the vertical heights and variations in localized states that exhibit crescent shaped wavefunctions, whereby the energy levels are distributed over a broad spectral range. When the excitation intensity is decreased, irregular peaks appear in the gain spectrum gradually. Similar phenomena were also observed as the temperature increased. We conclude that excited carriers in quantum rings are distributed stochastically at various localized states and that the population inversion is sensitive to both excitation intensity and temperature. [ABSTRACT FROM AUTHOR]

Single-parameter single-electron pumps (SEPs) based on a quantum dot have been suggested as promising devices to realize the new definition of the unit of current, the ampere, where quantized current produced from the SEP device is only defined by the elementary charge e and applied external radiofrequency (rf), f, i.e., I = ef. The conventional method to eliminate offset signals in the precision current measurement of pump current has been to measure the current difference between the pump-on and pump-off states. To date, the rf-on and rf-off method has been used to pump between its on and off states. However, this method inevitably induces alternating rf-heating effects and varying temperatures of the device environment, possibly leading to a thermal drift of the offset current. In the current work, we developed a new gate-switching technique that can alternate the pump on and off states while maintaining a constant rf-on state, resulting in a more stable system temperature. Using the gate-switching technique, we achieved a temperature-stabilized environment and performed a precision current measurement with sub-parts per million uncertainty. [ABSTRACT FROM AUTHOR]

The reversal technique in electrical measurements has been generally used to obtain a genuine value of an interesting physical quantity without unwanted signal offset. In the present work, we developed a novel cryo-switch made of electrical gates on GaAs heterostructure and demonstrate the current-reversal operation for a single-parameter electron pump. In precision measurements, we confirmed that the current values in reversal (i.e., approximately ±12.817 pA) being generated by the electron pump at T = 4.2 K agree well with each other in the deviation and uncertainty levels for various exit gate voltages. We also show that the accuracy level evaluated via the difference between the currents reversed was consistent with the unipolar measurements. Consequently, the measurement uncertainty was improved by a factor of two with the same measurement cycle number because of enhancement of signal-to-noise ratio. [ABSTRACT FROM AUTHOR]

Abstract Nitrogen accumulation in sediments, and the subsequent migration and transformations between sediment and the overlying water, plays an important role in the lake nitrogen cycle. However, knowledge of these processes are largely confined to ice-free seasons. Recent research under ice has mainly focused on the water eco-environmental effects during winter. Sediment N accumulation during the ice-on season and its associated eco-environmental impacts have never been systematically investigated. To address these knowledge gaps, we chose Wuliangsu Lake in China as a case study site, taking advantage of the spatial disparity between the 13 semi-separated sub-lakes. Based on samples of 35 sampling sites collected before, in the middle, and at the end of ice-on season separately, we performed a quantitative analysis of under-ice lake N accumulation and water-sediment N exchange by analyzing N fraction variations. Hierarchical Cluster Analysis and Relevance Analysis were used to help elucidate the main causes and implications of under-ice N variation. Our results clearly show that existing studies have underestimated the impact of under-ice N accumulation on the lake ecology throughout year: 1) Sediment N accumulated 2–3 times more than that before winter; 2) residual nitrogen (Res-N) contributed to the majority of the accumulated sediment N and was mainly induced by the debris of macrophytes; 3) total available nitrogen (TAN) was the most easily exchanged fractions between sediment and water, and it mainly affected the water environment during winter; 4) the Res-N accumulation during the ice-on season may have a strong impact on the eco-environment in the subsequent seasons. Our research is valuable for understanding the mechanism of internal nutrient cycle and controlling the internal nitrogen pollution, especially in shallow seasonally-frozen lakes that have long suffered from macrophyte-phytoplankton co-dominated eutrophication. Graphical abstract Image 10077 Highlights • Previous knowledge has underscored the impacts of under-ice nitrogen accumulation. • Under-ice sediment nitrogen cumulated 2–3 times more than that before ice-on season. • Residual nitrogen (Res-N) contributed to the majority of accumulated sediment N. • Accumulated Res-N was mainly induced by the debris of macrophytes. • Res-N accumulation may have a strong impact on eco-environment in subsequent seasons. Under-ice sediment N cumulated 2–3 times more than that before ice-on season. The existing studies have underestimated the eco-environment impact of under-ice N accumulation. [ABSTRACT FROM AUTHOR]

We have demonstrated high hole mobility in strained In0.25Ga0.75Sb quantum well (QW) structure with a high quality Al0.95Ga0.05Sb buffer layer for future single channel complementary metal-oxide-semiconductor circuits. The Al0.95Ga0.05Sb buffer layer is important to achieve low substrate leakage and guarantee good channel material quality and high hole mobility. We grew buffer layers with various Sb effective flux conditions using molecular beam epitaxy to obtain high crystal quality and proper electrical properties. We systematically evaluated the relationship between the crystal quality and electrical properties using X-ray diffraction, atomic force microscope, Raman, and the Hall effect measurement system. Then, on this optimized buffer layer, we grew the In0.2Al0.8Sb/In0.25Ga0.75Sb/linear-graded Al0.8Ga0.2Sb QW structure to obtain high hole mobility with compressive strain. Moreover, the compressive strain and hole mobility were measured by Raman and Hall effect measurement system. The results show a compressive strain value of 1.1% in In0.25Ga0.75Sb QW channel, which is very close to the theoretical value of 1.1% from lattice mismatch, exhibiting the highest hole mobility of 1170 cm2/V s among reported mobility in In0.25Ga0.75Sb QW. Furthermore, it was able to be fabricated as p-type Fin-FET and shown the excellent electrical characteristics with low Smin and high gm. [ABSTRACT FROM AUTHOR]

Introduction: Integration-deficient lentiviral vectors (IDLVs) are a promising platform for immunisation to elicit both humoral immunity and cellular mediated immunity (CMI). Here, we compared the specific immunity in mice immunised via different regimens (homologous and cocktail) with IDLV-based HCV pseudoparticles (HCVpps) carrying pseudotyped glycoproteins E1E2 and bearing the HCV NS3 gene. Humoral and cell-mediated immune responses were also evaluated after IDLV-HCVpp immunisation combined with heterologous rAd5-CE1E2 priming protocols. Sera from the mice effectively elicited anti-E1, -E2, and -NS3 antibody responses, and neutralised various HCVpp subtypes (1a, 1b, 2a, 3a and 5a). No significant CMI was detected in the groups immunised with IDLV-based HCVpps. In contrast, the combination of rAd5-CE1E2 priming and IDLV-based HCVpp boosting induced significant CMI against multiple antigens (E1, E2, and NS3). Conclusion: IDLV-based HCVpps are a promising vaccination platform and the combination of rAd5-CE1E2 and IDLV-based HCVpp prime-boost strategy should be further explored for the development of a cross-protective HCV vaccine. [ABSTRACT FROM AUTHOR]

Localized states in an anisotropic single GaAs quantum ring were investigated in terms of polarization dependence of micro-photoluminescence spectrum at 5K. Given four Stokes parameters measured with a pair of linear polarizers and waveplates, the elliptical polarization states of two different vertical confinement states (k=1 and k=2) were compared with phase, rotation, and ellipticity angles. While the polarized emission intensity of the k=2 states becomes enhanced along [1,1,0] compared to that along [1,1¯,0], the polarization asymmetry of the k=1 states shows the opposite result. We conclude the polarization state is determined by the shape of the lateral wavefunctions. In the k=2 state, crescent-like wavefunctions are strongly localized, but the k=1 state consists of two crescent-like wavefunctions, which are connected weakly through quantum tunneling.

The semiconductor quantum dot (QD) has been successfully demonstrated as a potentially scalable and on-chip integration technology to generate the triggered photon streams that have many important applications in quantum information science. However, the randomicity of these photon streams emitted from the QD seriously compromises its use and especially hinders the on-demand manipulation of the spin states. Here, by accurately integrating a QD and its mirror image onto the two foci of a bifocal metalens, we demonstrate the on-demand generation and separation of the spin states of the emitted single photons. The photon streams with different spin states emitted from the QD can be flexibly manipulated to propagate along arbitrarily designed directions with high collimation of the smallest measured beaming divergence angle of 3.17°. Our work presents an effectively integrated quantum method for the simultaneously on-demand manipulation of the polarization, propagation, and collimation of the emitted photon streams., (Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).)

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

The blood-brain barrier (BBB) is increasingly regarded as a dynamic interface that adapts to the needs of the brain, responds to physiological changes, and gets affected by and can even promote diseases. Modulation of BBB function at the molecular level in vivo is beneficial for a variety of basic and clinical studies. Here we show that our heteroduplex oligonucleotide (HDO), composed of an antisense oligonucleotide and its complementary RNA, conjugated to α-tocopherol as a delivery ligand, efficiently reduced the expression of organic anion transporter 3 (OAT3) gene in brain microvascular endothelial cells in mice. This proof-of-concept study demonstrates that intravenous administration of chemically synthesized HDO can remarkably silence OAT3 at the mRNA and protein levels. We also demonstrated modulation of the efflux transport function of OAT3 at the BBB in vivo. HDO will serve as a novel platform technology to advance the biology and pathophysiology of the BBB in vivo, and will also open a new therapeutic field of gene silencing at the BBB for the treatment of various intractable neurological disorders.

In this paper, InAs 0.81 Sb 0.19 -based hetero-junction photovoltaic detector (HJPD) with an In 0.2 Al 0.8 Sb barrier layer was grown on GaAs substrates. By using technology computer aided design (TCAD), a design of a barrier layer that can achieve nearly zero valance band offsets was accomplished. A high quality InAs 0.81 Sb 0.19 epitaxial layer was obtained with relatively low threading dislocation density (TDD), calculated from a high-resolution X-ray diffraction (XRD) measurement. This layer showed a Hall mobility of 15,000 cm 2 /V⋅s, which is the highest mobility among InAsSb layers with an Sb composition of around 20% grown on GaAs substrates. Temperature dependence of dark current, photocurrent response and responsivity were measured and analyzed for fabricated HJPD. HJPD showed the clear photocurrent response having a long cutoff wavelength of 5.35 μm at room temperature. It was observed that the dark current of HJPDs is dominated by the diffusion limited current at temperatures ranging from 200K to room temperature from the dark current analysis. Peak responsivity of HJPDs exhibited the 1.18 A/W and 15 mA/W for 83K and a room temperature under zero bias condition even without anti-reflection coating (ARC). From these results, we believe that HJPDs could be an appropriate PD device for future compact and low power dissipation mid-infrared on-chip sensors and imaging devices.

The Aharonov-Bohm effect in ring structures in the presence of electronic correlation and disorder is an open issue. We report novel oscillations of a strongly correlated exciton pair, similar to a Wigner molecule, in a single nanoquantum ring, where the emission energy changes abruptly at the transition magnetic field with a fractional oscillation period compared to that of the exciton, a so-called fractional optical Aharonov-Bohm oscillation. We have also observed modulated optical Aharonov-Bohm oscillations of an electron-hole pair and an anticrossing of the photoluminescence spectrum at the transition magnetic field, which are associated with disorder effects such as localization, built-in electric field, and impurities.

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.