1. Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
- Author
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Miryam Arredondo-Arechavala, Gourab Sabui, Vitaly Z. Zubialevich, Z. J. Shen, Peter J. Parbrook, Mathew McLaren, and Pietro Pampili
- Subjects
Materials science ,III-V semiconductors ,Dry etching ,Annealing (metallurgy) ,Nanolithography ,Surface treatment ,Gallium nitride ,02 engineering and technology ,Semiconductor growth ,Epitaxy ,01 natural sciences ,Annealing ,GaN ,Dense nanocolumn arrays ,chemistry.chemical_compound ,0103 physical sciences ,Silica nanosphere hard masks ,Epitaxial growth ,Metalorganic vapour phase epitaxy ,Dense locally ordered 2D arrays ,010302 applied physics ,Array fill factor ,business.industry ,Thermal annealing ,Wide-bandgap semiconductor ,Gallium compounds ,Masks ,Hybrid top-down-regrow approach ,Shape ,Optics ,Nanostructured materials ,021001 nanoscience & nanotechnology ,Wide band gap semiconductors ,Nonpolar m-plane facets ,NC crystal quality ,Height deviations ,chemistry ,MOCVD ,Wet etching ,Nanosphere lithography ,Optoelectronics ,SiO2 ,0210 nano-technology ,business ,Nanocolumns - Abstract
A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.
- Published
- 2018