1. Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)
- Author
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Young-Ho Bae, J-H Lee, Weize Xiong, S. Cristoloveanu, C. R. Cleavelin, K-I Na, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Institute of Precision Engineering, National Chung Hsing University, and Domenget, Chahla
- Subjects
010302 applied physics ,Materials science ,business.industry ,Reverse short-channel effect ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical engineering ,Silicon on insulator ,Short-channel effect ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Threshold voltage ,Electric field ,Logic gate ,0103 physical sciences ,MOSFET ,Optoelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS ,Floating body effect - Abstract
The typical electrical properties of triple-gate SOI MOSFETs are investigated. The relationship between the short-channel effect (SCE) and the inter-gate coupling effect is studied as a function of the channel length and width. The three-dimensional coupling effect due to electric field penetration from substrate to channel, from source and drain to body, and from lateral gates to back interface is examined systematically by considering the fin width, channel length, and back bias variations. The gate-induced floating body effect (GIFBE), which shows partially depleted (PD) device properties in the fully depleted (FD) device is documented in n- and p-channel triplegate MOSFETs.
- Published
- 2009