153 results on '"QUERE, R."'
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2. Organ donation by Maastricht-III pediatric patients: Recommendations of the Groupe Francophone de Réanimation et Urgences Pédiatriques (GFRUP) and Association des Anesthésistes Réanimateurs Pédiatriques d'Expression Française (ADARPEF) Part I: Ethical considerations and family care
3. Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs
4. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism
5. Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance
6. Dual approach for bipolar transistor thermal impedance determination
7. LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
8. Short-Term Feeding of a High-Fat Diet Disturbs Lipid Raft/Tgf-Beta Signaling-Mediated Quiescence of Hematopoietic Stem Cells in C57bl/6j Mouse Bone Marrow
9. Targeting localization of the Il-7 Receptor within lipid rafts as a therapeutic strategy for T-Cell acute lymphoblastic leukemia
10. Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements.
11. Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications.
12. Automatic editing of numerical data
13. Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance.
14. Electromagnetic nonlinear modeling of active phased antenna.
15. Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs.
16. New methodology for mixed simulation of active antenna.
17. A normalized soft window-based similarity measure to extend the Rand index.
18. A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application.
19. DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects.
20. Characterizations of InAlN/AlN/GaN transistors for S-band applications.
21. A new design flow based on behavioral modeling applied to wideband and highly efficient power amplifiers with GaN packaged transistors.
22. New compact power cells for Ku band applications.
23. SCERNE, an efficient CAD tool for the modeling of RF and Mixed blocks.
24. Thermal and trapping phenomena assessment on AlGaN/GaN microwave power transistor.
25. A new multi-harmonic and bilateral behavioral model taking into account short term memory effect.
26. An efficient envelope transient simulation of S-Parameters circuits in system simulator.
27. Bilateral S parameters model for time domain system simulation.
28. Theoretical expression of error event probability for a trellis chaos coded modulation concatenated with space-time blok code.
29. On the determination of the thermal impedance of microwave bipolar transistors.
30. Performances of Chaos Coded Modulation schemes based on high dimensional LDPC Mod-MAP mapping with Belief Propagation decoding.
31. Optimum PAM-TCM schemes using left-circulate function over GF(2N).
32. 40 ns pulsed I/V set-up and measurement method applied to InP HBT characterization and electro-thermal modeling.
33. Chaotic Digital Encoding for 2D Trellis-Coded Modulation.
34. A new nonlinear HEMT model for AlGaN/GaN switch applications.
35. Bursts of Pulses for time domain large signal measurements.
36. Study of the distance spectrum of Chaos-Coded Modulation.
37. Dual approach for HBT thermal impedance.
38. Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier.
39. Advances on modelling and characterization of microwave devices at XLIM laboratory.
40. An Electrothermal Model of High Power HBTs for High Efficiency L/S Band Amplifiers.
41. Characterization and Modeling of Impact Ionization Effects on Small and Large Signal Characteristics of AlGaAs/GaInAs/GaAs PHEMTs.
42. High efficiency and linear power amplification for OFDM signal by combining dynamic bias and digital baseband predistortion.
43. Pulse Profiling for AlGaN/GaN HEMTs Large Signal Characterizations.
44. A Drain-Lag Model for AlGaN/GaN Power HEMTs.
45. Design of GaN-based balanced cascode cells for wide-band distributed power amplifier.
46. High power S band limiter simulation with a physics-based accurate nonlinear PIN diode model.
47. Implementation of a Behavioral Model of SSPAs taking into account mismatches for efficient System Simulation of Modern AESA.
48. Implementation of Behavioral Models in System Simulator and RF Circuit/System Co-Simulation.
49. Overview on System Level Simulation Environment for Characterization, Modeling and Simulation of RF and Microwave devices.
50. Design Method and New Architecture of Sub-Harmonic Balanced Cold FET Mixer for MVDS Applications.
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