208 results on '"Pivac, B."'
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2. Formation of isolated Ge nanoparticles in thin continuous Ge/SiO2 multilayers
3. The interface quality of Ge nanoparticles grown in thick silica matrix
4. C–V and DLTS studies of radiation induced Si–SiO2 interface defects
5. Defects in silicon introduced by helium implantation and subsequent annealing
6. Pulsed laser ablation of GaAs using nano pulse length
7. Capacitance changes in neutron irradiated n-type silicon: The flux effect
8. Structural analysis of amorphous Si films prepared by magnetron sputtering
9. Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study
10. Structural analysis of annealed amorphous SiO/SiO 2 superlattice
11. Silicon nanoparticles formation in annealed SiO/SiO 2 multilayers
12. Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures
13. Dislocation-related deep levels in carbon rich p-type polycrystalline silicon
14. Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing
15. GISAXS study of Si nanoclusters in SiO/SiO 2 layers
16. Evolution of nanoparticles in gold-implanted glass
17. Si nanocrystals in SiO 2 films analyzed by small angle X-ray scattering
18. Structural characterization of thin amorphous Si films
19. GISAXS study of gold implanted fused silica
20. X-ray reflectivity study of hydrogen implanted silicon
21. XRR and GISAXS study of silicon oxynitride films
22. Growth of Ge islands on Si substrates
23. GISAXS study of Si nanocrystals formation in SiO 2 thin films
24. Self-organized growth of Ge islands on Si(100) substrates
25. A GISAXS study of SiO/SiO 2 superlattice
26. Raman study of carbon clusters in W–C thin films
27. Defect production in γ-irradiated silicon at different temperatures
28. GISAXS characterization of Ge islands on Si(1 0 0) substrates
29. GISAXS study of hydrogen implanted silicon
30. Infrared study of structural changes in silicon oxynitride films
31. Study of structural changes in krypton implanted silicon
32. GISAXS study of structural relaxation in amorphous silicon
33. Small angle X-ray scattering study of oxygen precipitation in silicon
34. Gap states produced by oxygen precipitation in Czochralski silicon
35. UV light induced defects in amorphous silicon thin films
36. IBIC Studies of structural defect activity in different polycrystalline silicon material
37. Interstitial defects in ion-implanted Si
38. Influence of carbon on platinum diffusion in silicon
39. Defects in polycrystalline silicon studied by IBICC
40. Irradiation effects on polycrystalline silicon
41. Comparative studies of EFG poly-Si grown by different procedures
42. DLTS and EPR study of defects in H implanted silicon
43. Defects in carbon and oxygen implanted p-type silicon
44. Defects induced in amorphous silicon thin films by light soaking
45. X-Ray Reflectivity and GISAXS Study of Derelaxation in Kr Implanted Si
46. Carbon concentration variation in polycrystalline silicon wafers
47. SiC-like structures in edge-defined film-fed growth poly-silicon ribbons
48. IBICC characterisation of defect structures in polycrystalline silicon
49. Grain boundary defects in RTCVD polycrystalline silicon for solar cells
50. Oxygen-related deep levels in oxygen doped EFG poly-Si
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