1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature.
- Author
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Fortunato, Elvira M. C., Barquinha, Pedro M. C., Pimentel, Ana C. M. B. G., Gonçalves, Alexandra M. F., Marques, Antonio J. S., Martins, Rodrigo F. P., and Pereira, Luis M. N.
- Subjects
THIN film transistors ,TEMPERATURE ,IONIC mobility ,OPTOELECTRONIC devices ,MATERIALS science ,PHYSICS - Abstract
We report high-perfomance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm
2 /V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3 × 105 . The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination o f transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics. [ABSTRACT FROM AUTHOR]- Published
- 2004
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