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Many researchers focused on green synthesis of nanomaterials, due to its simplicity, sustainability, environmental-friendly aspect and cost effectiveness. This technique, to a large extent reduce the harmful effects caused by adopting traditional and chemical methods utilized in synthesizing these nanomaterials. A two-dimensional carbon sheet – Graphene has generated huge curiosity in material researchers owed to its unique characteristics suiting varied applications. Graphene, graphene oxide and reduced graphene oxide nano sheets easily can be combined with several metals, metal oxides, nanoparticles of inorganic nature, organic polymers, semiconductors, biomolecules etc. forming a diversity of nanocomposites based on graphene for applications in power, medical therapy, sensing as well as environmental remediation. An analysis prospecting Graphene, reduced graphene oxide and solo layer graphite-based nanocomposites, numerous mechanisms of graphene-based nanocomposites (chemical along with green method), variety of utilization owned by them is presented in this paper. The photocatalytic behaviour of graphene-rooted metal, oxides of metal and oxygen group elements and its composites in nano order prepared through chemical practices and green techniques has been discussed. A remarkable improvement in photocatalytic efficiency has been reported in the composites prepared by green method which can be useful in waste water treatment, industrial and medical applications. This mini review also emphasize that at par with chemically synthesized nanocomposites of Graphene, green synthesized one has highly effective application in antibacterial, cancer therapy, along with sensing utilization. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

This paper reported a rare earth Holmium (Ho) doped copper indium sulphide CuInS2(CIS) thin film grown by using very o economical chemical bath deposition method. Bath temperature was kept constant at 80°C. The main aim of this work is to synthesize a good photosensitive semiconducting film which can be used in photovoltaic devices like solar cells. The SEM images shows that the synthesized film is uniform, densely packed with cube like grains. X-ray diffractogram confirms chalcopyrite and wurtzite phase of CuInS. Absorption peaks are blue shifted which is due to decrease in particle size. EDAX 2 shows that synthesized film is non-stoichiometric and confirms the doping of Ho. It is found that initially transmittance is low in UV region but increases in visible region. Higher transmittance of 90% sunlight is obtained between 540-620 nm. Thus this film can be used in solar cells. Reflectance is low in the synthesized film showing that the film is anti reflection substance. The Ho doped film possesses larger band gap of 2.2 eV as compare to bulk film of CuInS which is due to reduced particle size. 2 Refractive index and extinction coefficient calculated in this film are 1.79 and 0.03 respectively. Ho doped CuInS film is quite 2 good photosensitive material. A strong emission peak is obtained at a wavelength of 630 nm in the IR region. The photoconductive gain calculated for the sample is ~2.6×104, which is quite good. [ABSTRACT FROM AUTHOR]

Present paper reports optical and electrical properties of samarium doped CdSe nanocrystalline thin film which was grown on a glass substrate by chemical bath deposition method (CBD). X-ray diffraction (XRD) analysis revealed that the deposited films were nanocrystalline with sphalerite cubic structure. The average crystallite size calculated from FWHM of XRD peaks was found to be 10.11 nm. The bandgap of the Sm doped CdSe nanocrystalline thin films was calculated to be 1.91 eV to 2.22 eV. The optical absorption edge of undoped (pure) and Sm doped CdSe films was obtained between 650 nm to 640 nm showing blue shift as compared to bulk CdSe. Sm doping further enhanced the photoconductivity of these films. The I-V characteristic confirmed the suitability of prepared films for photosensor applications. [ABSTRACT FROM AUTHOR]