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356 results on '"Park, Soohyung"'

1. Cation-eutaxy-enabled III–V-derived van der Waals crystals as memristive semiconductors

Author

Bae, Jihong, Won, Jongbum, Kim, Taeyoung, Choi, Sangjin, Kim, Hyesoo, Oh, Seung-Hyun Victor, Lee, Giyeok, Lee, Eunsil, Jeon, Sijin, Kim, Minjung, Do, Hyung Wan, Seo, Dongchul, Kim, Sungsoon, Cho, Youngjun, Kang, Hyeonsoo, Kim, Bokyeong, Choi, Hong, Han, Jihoon, Kim, Taehoon, Nemati, Narguess, Park, Chanho, Lee, Kyuho, Moon, Hongjae, Kim, Jeongmin, Lee, Hyunggeun, Davies, Daniel W., Kim, Dohyun, Kang, Seunghun, Yu, Byung-Kyu, Kim, Jaegyeom, Cho, Min Kyung, Bae, Jee-Hwan, Park, Soohyung, Kim, Jungkil, Sung, Ha-Jun, Jung, Myung-Chul, Chung, In, Choi, Heonjin, Choi, Hyunyong, Kim, Dohun, Baik, Hionsuck, Lee, Jae-Hyun, Yang, Heejun, Kim, Yunseok, Park, Hong-Gyu, Lee, Wooyoung, Chang, Kee Joo, Kim, Miso, Chun, Dong Won, Han, Myung Joon, Walsh, Aron, Soon, Aloysius, Cheon, Jinwoo, Park, Cheolmin, Kim, Jong-Young, and Shim, Wooyoung

Published
2024
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2. Balloon-expandable cobalt chromium stent versus self-expandable nitinol stent for the Atherosclerotic Iliac Arterial Disease (SENS-ILIAC Trial) Trial: a randomized controlled trial

Author

Choi, Woong Gil, Rha, Seung-Woon, Choi, Byoung Geol, Park, Soohyung, Kim, Ji Bak, Kang, Dong Oh, Choi, Cheol Ung, Seo, Yong Sung, Cho, Yoon Hyung, Park, Sang Ho, Lee, Seung Jin, Ko, Young Guk, Her, Ae-Young, Kim, Sang Min, Kim, Ki Chang, Cho, Jang Hyun, Kang, Won Yu, Kim, Joo Han, Kim, Min Woong, Kim, Do Hoi, Bae, Jang Ho, Ahn, Ji Hoon, Jo, Sang Cheol, Seo, Jae Bin, Jung, Woo Young, and Park, Sang Min

Published
2024
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20. Efficacy and safety of cilostazol-based triple antiplatelet therapy compared with clopidogrel-based dual antiplatelet therapy in patients with acute ST-elevation myocardial infarction undergoing percutaneous coronary intervention: A multicenter, randomized, open-label, phase 4 trial

Author

Park, Soohyung, Rha, Seung-Woon, Choi, Byoung Geol, Kim, Woohyeun, Choi, Woong Gil, Lee, Seung Jin, Lee, Jae Beom, Park, Ji Young, Park, Sang Min, Jeong, Myung Ho, Kim, Yong Hoon, Her, Ae-Young, Kim, Min Woong, Chen, Kang-Yin, Kim, Bae Keun, Shin, Eun-Seok, Seo, Jae-Bin, Ahn, Jihun, Choi, Se Yeon, Byun, Jae Kyeong, Cha, Jin Ah, Hyun, Su Jin, Choi, Cheol Ung, and Park, Chang Gyu

Published
2023
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28. Immediate versus staged complete revascularization in patients with ST-segment elevation myocardial infarction and multivessel coronary artery disease: results from a prematurely discontinued randomized multicenter trial

Author

Park, Soohyung, Rha, Seung-Woon, Choi, Byoung Geol, Cho, Jang Hyun, Park, Sang Ho, Lee, Jin Bae, Kim, Yong Hoon, Park, Sang Min, Choi, Jae Woong, Park, Ji Young, Shin, Eun-Seok, Lee, Jae Beom, Suh, Jon, Chae, Jei Keon, Choi, Young Jin, Jeong, Myung Ho, Cha, Kwang soo, Lee, Seung Wook, Kim, Ung, Kim, Gi Chang, Choi, Woong-Gil, Cho, Yun-Hyeong, Cho, Deok-kyu, Ahn, Jihun, Suh, Soon-Yong, Choi, Se Yeon, Byun, Jae Kyeong, Cha, Jin Ah, Hyun, Soo Jin, Kim, Ji Bak, Choi, Cheol Ung, and Park, Chang Gyu

Published
2023
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38. Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications.

Author

Yu, Byoung‐Soo, Kim, Wonsik, Jang, Jisu, Lee, Je‐Jun, Hong, Jung Pyo, Kwon, Namhee, Kim, Seunghwan, Ha, Aelim, Kim, Hong‐Kyu, Ahn, Jae‐Pyoung, Jeong, Kwangsik, Taniguchi, Takashi, Watanabe, Kenji, Wang, Gunuk, Ahn, Jongtae, Park, Soohyung, and Hwang, Do Kyung

Abstract

Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe2 semiconductor under different annealing atmospheres. Photoemission spectroscopy and density functional theory (DFT) calculations demonstrate that annealing processes in vacuum and in ambient air induce a modification in the density of states, resulting in alterations in p‐type or n‐type characteristics. These reversible changes are attributed to the physisorption and elimination of oxygen on the surface of MoTe2. Furthermore, it is found that the device geometry affects the polarity of the transistor. By strategically manipulating both the annealing conditions and the geometric configuration, the n‐ and p‐type unipolar characteristics of MoTe2 FETs are successfully modulated and ultimately demonstrating that the functionality of not only a complementary inverter with a high voltage gain of ≈20, but also more complex logic circuits of NAND and NOR gates. [ABSTRACT FROM AUTHOR]

Published
2024
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39. Impact of cigarette smoking on long-term clinical outcomes in patients with coronary chronic total occlusion lesions.

Author

Yu, HyeYon, Ahn, Jihun, Rha, Seung-Woon, Choi, Byoung Geol, Choi, Se Yeon, Byun, Jae Kyeong, Cha, Jin Ah, Hyun, Soo Jin, Park, Soohyung, and Choi, Cheol Ung

Subjects
CHRONIC total occlusion, MAJOR adverse cardiovascular events, PERCUTANEOUS coronary intervention, THERAPEUTICS, CARDIOVASCULAR diseases risk factors
Abstract

Cigarette smoking is a significant risk factor for coronary artery disease. However, there is insufficient evidence regarding the long-term clinical effects of smoking in Asian populations with chronic total occlusion (CTO). This study aimed to assess the effects of smoking on 5-year (median follow-up period, 4.2 ± 1.5 [interquartile range, 4.06–5.0] years) clinical outcomes in patients with CTO lesions who underwent percutaneous coronary intervention (PCI) or medical treatment (MT). We enrolled 681 consecutive patients with CTO who underwent diagnostic coronary angiography and subsequent PCI or MT. The patients were categorized into smokers (n = 304) and nonsmokers (n = 377). The primary endpoint was major adverse cardiovascular events (MACE), including a composite of all-cause death, myocardial infarction, and revascularization over a 5-year period. Propensity score matching (PSM) analysis was performed to adjust for potential baseline confounders. After PSM analysis, two propensity-matched groups (200 pairs, n = 400) were generated, and the baseline characteristics of both groups were balanced. The smokers exhibited a higher cardiovascular risk of MACE (29.5% vs. 18.5%, p = 0.010) and non-TVR (17.5 vs. 10.5%, p = 0.044) than the nonsmokers. In a landmark analysis using Kaplan–Meier curves at 1 year, the smokers had a significantly higher rate of MACE in the early period (up to 1 year) (18.8% and 9.2%, respectively; p = 0.008) compared with the nonsmokers. The Cox hazard regression analysis with propensity score adjustment revealed that smoking was independently associated with an increased risk of MACE. These findings indicate that smoking is a strong cardiovascular risk factor in patients with CTO, regardless of the treatment strategy (PCI or MT). In addition, in the subgroup analysis, the risk of MACE was most prominently elevated in the group of smokers who underwent PCI. [ABSTRACT FROM AUTHOR]

Published
2024
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40. Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability.

Author

Lee, Ju-Hun, Moon, Jaehyun, Kim, Kitae, Yi, Yeonjin, Park, Soohyung, Yang, Jong-Heon, Hwang, Chi-Sun, and Kang, Seung-Youl

Abstract

In this paper, we demonstrate the long-term stability of the threshold voltage (Vth) of ultra-thin indium oxide (In2O3) TFTs fabricated by atomic layer deposition (ALD) and modified with self-assembled monolayers (SAMs) of benzylphosphonic acid (BPA). By forming a self-assembled monolayer of BPA, it was possible to modify the surface to be hydrophobic and to have a lower surface energy as low as 24 mJ m−2. The surface-modified TFTs were found to be very stable for 168 hours in air with negligible change in Vth. In addition, the subthreshold swing (S.S.) and hysteresis showed improved electrical characteristics. Furthermore, the positive and negative bias stress (PBS and NBS) measurements at 3000 s and a gate voltage (VG) of ±5 V demonstrated the stable value of Vth. This is due to the strong covalent bonding of the hydroxyl group (–OH) on the surface BPA and In2O3 back-channel, which avoids chemisorption of oxygen (O2) and water (H2O) molecules from ambient air and reduces the degradation of the electrical properties of the TFT. These results demonstrate the promising stability of long-term electrical properties and the ease of application to ultra-thin In2O3 TFT and other oxide semiconductors. [ABSTRACT FROM AUTHOR]

Published
2024
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45. High Rejection‐Ratio IGZO Ultraviolet Phototransistor via Additional Solution Processed ZnO Absorption Layer.

Author

Ma, Jin Hyun, Jeong, Jun Hyung, Kang, Seong Jae, Park, Min Ho, Ha, Hyoun Ji, Kim, Eojin, You, Seungyun, Kim, Wonsik, Park, Soohyung, and Kang, Seong Jun

Subjects
INDIUM gallium zinc oxide, PHOTOTRANSISTORS, OZONE layer depletion, ZINC oxide, PHOTOELECTRON spectroscopy, ULTRAVIOLET spectroscopy, OZONE layer
Abstract

The depletion of the ozone layer over the last four decades has increased Earth's exposure to ultraviolet (UV) radiation, posing significant health risks. Indium‐Gallium‐Zinc‐Oxide (IGZO) phototransistors have emerged as promising UV detection candidates, boasting a wide bandgap (>3 eV), low off‐current, high on‐current, and stability. However, previous efforts to enhance the photoresponse of IGZO phototransistors focused on visible light absorption layers, neglecting UV detection. Here, zinc oxide (ZnO) nanoparticles (NPs) as an absorption layer in IGZO TFTs for UV phototransistors are introduced. IGZO/ZnO TFTs exhibit robust photoresponsivity for UV light below 360 nm, showcasing rejection ratios (Ruv / Rvis) of 20 258, 62 261, 193 649, and 401 582 for wavelengths of 360, 340, 320, and 300 nm, respectively. The combination of IGZO's wide bandgap with ZnO NPs proves effective for detecting UV light below 360 nm, even at low incident light intensities (15 µW cm−2). Enhanced photoresponse characteristics are confirmed via ultraviolet photoelectron spectroscopy. This research highlights the potential of IGZO materials for UV phototransistors and introduces a novel perspective on the utilization of an additional absorption layer traditionally employed for the conventional extension into the visible light range. [ABSTRACT FROM AUTHOR]

Published
2024
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46. Photoelectron Spectroscopic Study of the Interfacial Electronic Structures of Metal‐Ion Containing Polyelectrolytes on ITO Substrates.

Author

Lee, Jin Hee, Khan, Yeasin, Kim, Seunghwan, Choi, Ae Jin, Walker, Bright, Park, Soohyung, and Seo, Jung Hwa

Subjects
FRONTIER orbitals, PHOTOELECTRON spectroscopy, X-ray photoelectron spectroscopy, POLYELECTROLYTES, ELECTRONIC band structure
Abstract

Research in the field of organic electronics has witnessed dramatic improvements in device performance over the past several decades through an ever‐improving understanding of electron and hole movement and the development of new interfacial materials. In this study, a type of interfacial material that relies on ionic charges comprising metal:poly(styrenesulfonate) (PSS) polyelectrolytes are synthesized and investigated as structural analogs of the ubiquitously used poly(3,4‐ethylenedioxythiophene:polystyrenesulfonate) (PEDOT:PSS) hole transport layer, in order to investigate correlations between metal cation ions and the cationic PEDOT component. The metal ions selected for this study include Li, Mg, V, Mn, Co, Ni, Cu, Zn, Pd, Ag, Cs, and Pb ions. To analyze the interfacial energy level alignment, electronic band structure, and band bending at the Indium tin oxide (ITO)/metal:PSS interface, X‐ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) are employed. Alkali (earth) and post‐transition metals show deep highest occupied molecular orbital (HOMO) levels and low work function (WF) due to Fermi level balance, implying poor hole transport. Remarkably, Cu:PSS displays a unique electronic structure, suggesting potential as a hole transport layer with increased WF and low hole injection barrier. Period 5 transition metals mirror PEDOT:PSS trends, and Ag:PSS holds the potential to form effective ohmic contacts. [ABSTRACT FROM AUTHOR]

Published
2024
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47. A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO2 single layer.

Author

Park, Min Ho, Jeong, Jun Hyung, Kim, Wonsik, Park, Soohyung, Lim, Byeong Min, Lee, Hong-Sub, and Kang, Seong Jun

Abstract

Memristors are becoming increasingly recognized as candidates for neuromorphic devices due to their low power consumption, non-volatile memory, and synaptic properties and the ease of parallel computing through crossbar arrays. However, sneak current is a critical obstacle in crossbar arrays, and much research is being conducted to suppress the sneak current through self-rectifying characteristics. Here, we present a highly straightforward method for fabricating an active layer of a self-rectifying memristor through a single spin coating process, capitalizing on the attributes of spin coating, which initiates the reaction from the upper portion of the solution. We fabricated a self-rectifying memristor using an Ag/TiO2/TiOx/ITO structure through a vacuum-free solution process with low cost. During the spin-coating process, the reaction between titanium isopropoxide (TTIP) and ambient moisture formed TiO2 with an oxygen vacancy gradient. We confirmed the natural oxygen vacancy gradient using X-ray photoelectron spectroscopy (XPS) depth profiling and elucidated the resistance switching and self-rectifying mechanisms of the memristor based on the energy band structure. The memristors exhibited resistance switching and self-rectifying characteristics, which were essential characteristics for preventing sneak currents in a 3 × 3 crossbar array structure. [ABSTRACT FROM AUTHOR]

Published
2024
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49. Spontaneous curvature generation by peptides in asymmetric bilayers.

Author

Park, Soohyung, Rice, Amy, Im, Wonpil, and Pastor, Richard W.

Subjects
*DEVIATORIC stress (Engineering), *CURVATURE, *PEPTIDES, *CHEMICAL potential, *SURFACE tension
Abstract

Peptides and proteins play crucial roles in membrane remodeling by inducing spontaneous curvature. However, extracting spontaneous curvatures from simulations of asymmetric bilayers is challenging because differential stress (i.e., the difference of the leaflet surface tensions) arising from leaflet area strains can vary substantially among initial conditions. This study investigates peptide‐induced spontaneous curvature δc0p in asymmetric bilayers consisting of a single lipid type and a peptide confined to one leaflet; δc0p is calculated from the Helfrich equation using the first moment of the lateral pressure tensor and an alternative expression using the differential stress. It is shown that differential stress introduced during initial system generation is effectively relaxed by equilibrating using P21 periodic boundary conditions, which allows lipids to switch leaflets across cell boundaries and equalize their chemical potentials across leaflets. This procedure leads to robust estimates of δc0p for the systems simulated, and is recommended when equality of chemical potentials between the leaflets is a primary consideration. [ABSTRACT FROM AUTHOR]

Published
2024
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