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Esta investigación presenta la simulación de las sobretensiones ocurridas durante una maniobra de mantenimiento en un compensador estático de potencia reactiva de 230 kV. El incorrecto funcionamiento de un interruptor de potencia causa una falla catastrófica que incluye la explosión y el incendio del equipo. La Información obtenida de investigaciones previas, donde se analizan los estados estable y transitorio del compensador, no toma en cuenta la combinación del comportamiento del compensador y la fallida operación de los medios de desconexión. La incorrecta apertura de uno de los polos del interruptor de potencia del compensador provoca sobretensiones interesantes las cuales están relacionadas con las componentes armónicas de tensión y corriente generadas por un elemento clave de la falla: el reactor controlado por tiristores. En este trabajo se utiliza el Software Alternative Transients Program (ATP) para modelar el compensador y obtener el cálculo de las sobretensiones transitorias. Se analizan las frecuencias naturales y el espectro armónico de las señales manejadas por el compensador. Con la ayuda de una videograbación se muestran imágenes reales de los arcos eléctricos generados debido a las sobretensiones. Este estudio se realiza por primera vez en este compensador estático y la información resultante es de mucha utilidad futura para el diseño eléctrico y la planificación de la operación de las redes de potencia.

In the framework of the Thomas–Fermi (TF) approach, a model for the p-type double-δ-doped (DDD) system in GaAs is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped GaAs. [ABSTRACT FROM AUTHOR]

Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate, and in general multiply the number of minibands and minigaps in a specific energy region. Here, we show that monomer, dimer, and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-defined spin-valley polarization states by appropriately adjusting the superlattice structural parameters. We obtain these conclusions by studying the spin-valley polarization and TMR of monomer, dimer, and trimer MSSLs. The magnetic unit cell is structured with one seed A with positive magnetization, and one, two, or three seeds B with variable magnetization. The number of B seeds defines the monomer, dimer, and trimer superlattice, while its magnetic orientation positive or negative the parallel (PM) or antiparallel magnetization (AM) superlattice configuration. The transfer matrix method and the Landauer-Büttiker formalism are employed to obtain the transmission and transport properties, respectively. We find multiplication of TMR peaks in staircase fashion according to the number of B seeds in the superlattice unit cell. This multiplication is related to the multiplication of the minibands which reflects as multiplication of the descending envelopes of the conductance. We also find well-defined polarization states for both PM and AM by adjusting asymmetrically the width and height of the barrier-well in seeds A and B., (© 2024 IOP Publishing Ltd.)

Tuning the band gap is of utmost importance for the practicality of two-dimensional materials in the semiconductor industry. In this study, we investigate the ballistic transport and the tunneling magnetoresistance (TMR) properties within a modulated gap in a ferromagnetic/normal/ferromagnetic (F/N/F) phosphorene junction. The theoretical framework is established on a Dirac-like Hamiltonian, the transfer matrix method, and the Landauer-Büttiker formalism to characterize electron behavior and obtain transmittance, conductance and TMR. Our results reveal that a reduction in gap energy leads to an enhancement of conductance for both parallel and anti-parallel magnetization configurations. In contrast, a significant reduction and redshift in TMR have been observed. Notably, the application of an electrostatic field in a gapless phosphorene F/N/F junction induces a blueshift and a slight increase in TMR. Furthermore, we found that introducing an asymmetrically applied electrostatic field in this gapless junction results in a significant reduction and redshift in TMR. Additionally, intensifying the applied magnetic field leads to a substantial increase in TMR. These findings could be useful for designing and implementing practical applications that require precise control over the TMR properties of a phosphorene F/N/F junction with a modulated gap., (© 2024 IOP Publishing Ltd.)

Our study investigated the emergence of spatial quasi-bound states (QBSs) in graphene monolayers induced by rectangular potential barriers. By solving the time-independent Dirac equation and using the transfer matrix formalism, we calculated the resonance energies and identify the QBSs based on probability density functions (PDF). We analyzed two types of structures: single and double barriers, and we find that the QBSs are located within the barrier region, at energies higher than the single barrier. Additionally, we observe QBSs in the double barrier and their position depends on the distance and width of the well between the two barriers. The width and height of the barrier significantly impact the QBSs while the well width influences the resonance energy levels of the QBSs in the double barrier. Interestingly, the QBSs can be manipulated in the graphene system, offering potential for optoelectronic devices. Finally, our results demonstrated that the spatial localization of these states is counter-intuitive and holds great promise for future research in optolectronic devices., (© 2024. The Author(s).)

The inevitable structural disorder associated with the fluctuation of the applied external electric field, laser intensity, and bidimensional density in the low dimensional quantum system can affect noticeably optical absorption properties and the related phenomena. In this work, we study the effect of structural disorder on the optical absorption properties in delta-doped quantum wells (DDQWs). Starting from effective mass approximation and the Thomas-Fermi approach as well as using the matrix density, the electronic structure and the optical absorption coefficients of DDQWs are determined. It is found that the optical absorption properties depend on the strength and the type of structural disorder. Particularly, the bidimensional density disorder suppresses strongly the optical properties. Whilst, the disordered external applied electric field fluctuates moderately in the properties. In contrast, the disordered laser holds absorption properties unalterable. So, our results specify that to have and preserve good optical absorption properties in DDQWs, requires precise control of the bidimensional. Besides, the finding may improve the understanding of the impact of the disorder on the optoelectronic properties based on DDQWs., (© 2023 IOP Publishing Ltd.)

Periodic superlattices constitute ideal structures to modulate the transport properties of two-dimensional materials. In this paper, we show that the tunneling magnetoresistance (TMR) in phosphorene can be tuned effectively through periodic magnetic modulation. Deltaic magnetic barriers are arranged periodically along the phosphorene armchair direction in parallel (PM) and anti-parallel magnetization (AM) fashion. The theoretical treatment is based on a low-energy effective Hamiltonian, the transfer matrix method and the Landauer-Büttiker formalism. We find that the periodic modulation gives rise to oscillating transport characteristics for both PM and AM configurations. More importantly, by adjusting the electrostatic potential appropriately we find Fermi energy regions for which the AM conductance is reduced significantly while the PM conductance keeps considerable values, resulting in an effective TMR that increases with the magnetic field strength. These findings could be useful in the design of magnetoresistive devices based on magnetic phosphorene superlattices., (© 2023 IOP Publishing Ltd.)

Magnetic silicene junctions are versatile structures with spin-valley polarization and magnetoresistive capabilities. Here, we investigate the temperature effects on the transport properties of single magnetic silicene junctions. We use the transfer matrix method and the Landauer-Büttiker formalism to calculate the transmittance, conductance, spin-valley polarization and tunneling magnetoresistance (TMR). We studied the case for T = 0 K, finding the specific parameters where the spin-valley polarization and the TMR reach optimized values. Regarding the temperature effects, we find that its impact is not the same on the different transport properties. In the case of the conductance, depending on the spin-valley configuration the resonant peaks disappear at different temperatures. The spin polarization persists at a considerable value up to T = 80 K, contrary to the valley polarization which is more susceptible to the temperature effects. In addition, a stepwise spin-valley polarization can be achieved at low temperature. The TMR is attenuated considerably as the temperature rises, decreasing more than two orders of magnitude after T = 20 K. These findings indicate that in order to preserve the spin-valley polarization and magnetoresistive capabilities of magnetic silicene junctions is fundamental to modulate the temperature adequately., (© 2022 IOP Publishing Ltd.)

The stronger activity of poly(vinylidene difluoride) (PVDF; C 2 H 2 F 2 ), related with its high dielectric constant and its ferromagnetic behavior, puts it into the kinds of materials with novel mechanical features to develop new devices with numerous advantages. Even though PVDF is a common piezoelectric polymer with promising multifunctionality, there still has been little progress in theoretically understanding its band structure and the addition of itinerant electrons because of its polymorphous and multiple phases. In this work, we present the structural and electronic properties of 25% doped C 2 H 2 F(X) (X = Al, Ni, and Cu) compounds, including high-frequency dielectric constant (ϵ ∞ ) calculations. Our results show that doping induces structural changes, inducing molecular twists due to weak interactions between the different chains, besides increasing ϵ ∞ with itinerant electrons and increasing the band gap with a transition insulator-metal with 25% Ni doping.