Search

The interface of a La0.7Sr0.3MnO3/SrTiO3 bilayer was modulated by introducing 3 unit cells of Ba1-xSrxTiO3 using Combinatorial Pulsed Laser Deposition. A wide range of chemical compositions was studied within the same sample, with BSTx stoichiometry variable from 0.5 to 1 along Y-axis, while the SrTiO3 overlayer thickness was modified along the X direction [Fig. 1(a)]. We performed high-resolution, laboratory-based angle-resolved XPS studies of the BSTx film surface providing information on the thickness and composition of the surface and sub-surface layers. Based on the attenuation of the La 3d corelevel photoemission signal from the La0.7Sr0.3MnO3 bottom layer, the BST layer is 1.2 nm thick. XPS Ba 3d5/2 core-level spectra were acquired at positions corresponding to different nominal Ba/Sr stoichiometry. In all measurements, the Ba 3d5/2 core-level spectra can be represented by two main components, i.e. one component at higher binding energy (BE = 780.54 eV) corresponding to surface contribution and the other one at lower binding energy (BE = 778.92 eV) corresponding to sub-surface contribution (Figs. 2 and 3). Going from normal to 60° emission angle and using a 3-unit cell thick film model, the surface to sub-surface intensity ratio clearly evolves providing evidence of a Ba-rich surfactant. The surfactant effect is more significant for lower nominal Ba stoichiometry.

The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ., 10 pages, 3 figures

Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic and ferroelectric materials. A less explored path is to make use of polar domain walls in nonpolar ferroelastic materials. Indeed, while the polar character of ferroelastic domain walls has been demonstrated, polarization control has been elusive. Here, we report evidence for the electrostatic signature of the domain-wall polarization in nonpolar calcium titanate (CaTiO3). Macroscopic mechanical resonances excited by an ac electric field are observed as a signature of a piezoelectric response caused by polar walls. On the microscopic scale, the polarization in domain walls modifies the local surface potential of the sample. Through imaging of surface potential variations, we show that the potential at the domain wall can be controlled by electron injection. This could enable devices based on nondestructive information readout of surface potential., Comment: 30 pages, 12 figures

International audience; The presence of gold on the sidewall of a tapered, single silicon nanowire is directly quantified from core-level nanospectra using energy- filtered photoelectron emission microscopy. The uniform island-type partial coverage of gold determined as 0.42 +/- 0.06 (∼1.8 ML) is in quantitative agreement with the diameter reduction of the gold catalyst observed by scanning electron microscopy and is confirmed by a splitting of the photothresholds collected from the sidewall, from which characteristic local work functions are extracted using a model of the full secondary electron distributions.

In the past decade, oxide-based heterostructures have been studied extensively as potentially attractive systems for applications in nanoelectronics. Among them, ferroelectric materials raised interest as potential support for those technological applications. Indeed, their spontaneous electric polarization easily switched by applying an electric field makes them a good basis for non-volatile data storage. Switching the polarization requires a metallic contact with an electrode, thus heterostructures of ferroelectric thin films with metallic electrodes have been widely studied. At the interface between those two materials, free charges of the electrode help screening the polarization induced surface charges detrimental to maintaining proper polarization in the ferroelectric thin film. With metallic oxide electrodes, an ionic displacement at the electrode/ferroelectric interface will help the screening. However, despite important theoretical discoveries, direct experimental data is scarce and further understanding of the interface behavior is crucial for a proper integration of ferroelectric films in functioning nanometer sized devices. In this thesis, photoemission spectroscopy based techniques are used to probe the buried interface of an electrode/BaTiO₃/electrode heterostructure, for two different electrodes: the metallic oxide SrRuO₃ and the Co metal. We acquired information on the behavior of the interface and its response to polarization switching. This work is a new step towards a complete understanding on the behavior of the interface between electrodes and the BaTiO₃ ferroelectric, in device-like heterostructures, in terms of electronic properties, kinetic, and fatigue. The experiments presented combined state of the art characterization techniques, where the use of hard X-rays and in situ bias application made it possible to resolve the difficult task of probing buried interfaces in working conditions., Au cours des dix dernières années, les hétérostructures à base de matériaux oxyde ont été grandement étudiées comme potentiel systèmes d’application pour le nanoélectronique. Parmi eux, les ferroélectriques (FE) sont particulièrement intéressants comme support pour ces applications technologies. En effet, leur polarisation électrique spontanée, aisément réversible par application d’un champ électrique en fait de bons candidats pour le stockage de données non-volatile. Renverser la polarisation nécessite un contact avec une électrode, ainsi les hétérostructures de films mince de FE avec électrodes métalliques ont été grandement étudiées. A l’interface entre les deux matériaux, les charges libres de l’électrode permettent d’écranter les charges de surfaces, détrimentales au maintien de la polarisation au sein du film FE. Avec des électrodes d’oxyde métalliques, un déplacement ionique à l’interface électrode/FE va d’avantage favoriser cet écrantage, plaçant l’interface au cœur du processus d’écrantage. Cependant, malgré d’importantes découvertes théoriques, les données expérimentales sont rares et le comportement exact de l’interface électrode/FE est seulement partiellement maitrisée. Une plus grande compréhension est indispensable pour une intégration correcte des films FE dans des dispositifs nanométriques. Dans cette thèse, des techniques basées sur la spectroscopie de photoémission sont utilisées pour sonder l’interface enfouie d’une hétérostructure électrode/BaTiO₃/électrode, dans le cas de deux électrodes différentes : l’oxyde métallique SrRuO₃ et le métal cobalt. Nous avons acquis des informations sur le comportement de l’interface et sa réponse au renversement de la polarisation. Ce travail est un nouveau pas vers une plus grande maitrise des phénomènes physiques gouvernant le comportement de l’interface entre électrodes le ferroélectrique BaTiO₃, en termes de propriété électronique, de cinétique et de fatigue. Les expériences présentées couplent des techniques d’analyses de pointes, où l’utilisation de rayons X durs et l’application de champs électriques in situ ont rendus possible la difficile tâche de sonder des interfaces enfouies en condition de fonctionnement.

This thesis addresses the problem of imaging of model systems planar silicon pn junctions, fabricated by localized epitaxy, using the novel energy-filtered X-ray PhotoElectron Emission Microscope (XPEEM). The objective is to improve the understanding of the phenomena influencing the XPEEM images of the junctions, with as long-term perspective, a possible application of this method in a complementary way to existing techniques of 2D dopant mapping. The studies were carried out over three types of junction realized to this purpose and presenting variable electrical field (P+/P, N+/P, P+/N). We firstly developed and optimized a passivation protocol in three-steps which yielded a surface close to flat band conditions. This process allowed us to deduce band alignments as a function of doping level and type on both side of the junction thanks to spectroscopic XPEEM imaging of secondary electrons (to determine local work function), Si 2p core-level and valence band with both laboratory photon sources and synchrotron radiation. Contrast in core-level imaging due to the first atomic layer of the surface was also shown. Then, we highlighted the role of the lateral electric field across the depletion zone of a pn junction which shifts the apparent position of the latter in PEEM imaging. We compared experimental results and simulations performed with SIMION software to estimate the influence of pn junctions on PEEM imaging. Dark field imaging of the junction was also simulated. Comparison with the experimental results showed that it can be used to localize the real junction., Ce mémoire de thèse traite de l'étude de jonctions pn silicium planaires, réalisées par épitaxie localisée, avec un nouveau type de microscopie à émission de photoélectrons (XPEEM) filtré en énergie. L'objectif est d'améliorer notre compréhension des facteurs influençant l'imagerie XPEEM de jonctions modèles avec une perspective à plus long terme d'application de cette technique aux cas réels. Sur les trois types de jonction réalisées présentant des champs électriques variables P+/P, N+/P, P+/N), nous avons d'abord mis en oeuvre un procédé de passivation en trois étapes afin de se rapprocher de conditions en bandes plates en surface. Ce procédé nous a permis d'étudier la position des niveaux électroniques de part et d'autre des jonctions grâce à une imagerie en XPEEM spectroscopique avec électrons secondaires (travail de sortie local), électrons de coeur Si 2p et bande de valence, avec à la fois avec des sources X de laboratoire et le rayonnement synchrotron. Un mécanisme de contraste des images en électrons de coeur dû à la toute première couche atomique de surface a été montré. Ensuite, nous avons mis en évidence le rôle du champ électrique au niveau de la zone de déplétion des jonctions qui décale la position apparente de cette dernière dans l'image XPEEM. Nous avons comparé les résultats expérimentaux avec des simulations (logiciel SIMION) afin d'estimer son influence sur les conditions d'imagerie. Enfin, nous avons étudié l'impact de la technique d'imagerie en champ sombre sur la localisation de la jonction réelle au niveau de la surface de l'échantillon.