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Your search keyword '"Musa Mutlu Can"' showing total 3 results
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3 results on '"Musa Mutlu Can"'

1. Crystal orientation of epitaxial film deposited on silicon surface

Author

Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, and Mamoru Yoshimoto

Subjects
Medicine, Science
Abstract

Abstract Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide materials on Si surface. However, the thermodynamic stability does not include any crystallographic factors, which is required for epitaxial growth. Adsorption energy evaluated by total energy estimated with the density functional theory predicted the orientation of epitaxial film growth on Si surface. For lower computing cost, the adsorption energy was estimated without any structural optimization (simple total of energy method). Although the adsorption energies were different on simple ToE method, the crystal orientation of epitaxial growth showed the same direction with/without the structural optimization. The results were agreed with previous simulations including structural optimization. Magnesium oxide (MgO), as example of epitaxial film, was experimentally deposited on Si substrates and compared with the results from the adsorption evaluation. X-ray diffraction showed cubic on cubic growth [MgO(100)//Si(100) and MgO(001)//Si(001)] which agreed with the results of the adsorption energy.

Published
2024
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2. Irreversible Multi-Band Effects and Lifshitz Transitions at the LaAlO3/SrTiO3 Interface Under Field Effect

Author

Daniele Marré, Fabio Miletto Granozio, Mian Akif Safeen, Musa Mutlu Can, Emiliano Di Gennaro, Ilaria Pallecchi, Nicolò Lorenzini, Pallecchi, I., Lorenzini, N., Safeen, M. A., Can, M. M., Di Gennaro, E., Granozio, F. M., and Marre, D.

Subjects
Multi band, Materials science, Condensed matter physics, field effect, Interface (Java), multiband transport, oxide interfaces, Field effect, Laalo3 srtio3, Electronic, Optical and Magnetic Materials
Abstract

In this work, the irreversible effects of an applied electric field on the magnetotransport properties of LaAlO3/SrTiO3 conducting interfaces are investigated, with focus on their multiband character. Samples of different types, namely with either crystalline or amorphous LaAlO3 overlayer, are studied. The two-band analysis highlights the similarity of the electronic properties of crystalline and amorphous interfaces, regardless much different carrier densities and mobilities. Furthermore, filling and depletion of the two bands follow very similar patterns, at least in qualitative terms, in the two types of samples. In agreement with previous works on crystalline interfaces, it is observed that an irreversible charge depletion takes place after application of a first positive back gate voltage step. Such charge depletion affects much more, in relative terms, the higher and three-dimensional dyz, dzx bands than the lower and bidimensional dxy, driving the system through the Lifshitz transition from two-band to single band behavior. The quantitative analysis of experimental data evidences the roles of disorder, apparent in the depletion regime, and temperature. Noteworthy, filling and depletion of the two bands follow very similar patterns in crystalline and amorphous samples, at least in qualitative terms, regardless much different carrier densities and mobilities.

Published
2021

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