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Your search keyword '"Moiseev, K. D."' showing total 159 results
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159 results on '"Moiseev, K. D."'

9. Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation.

Author

Alekseev, P. A., Eliseyev, I. A., Romanov, V. V., Moiseev, K. D., Kunitsyna, E. V., Borodin, B. R., Sharov, V. A., Smirnov, A. N., and Davydov, V. Yu.

Subjects
KELVIN probe force microscopy, PHOTOOXIDATION, ATOMIC force microscopy, LASERS, POWER density
Abstract

Laser photooxidation is used to form a surface antimony layer on p-type GaSb and GaAs0.06Sb0.94. The emerged Sb/III-Sb interface is studied by a combination of the Raman and photoluminescence spectroscopy supported by Kelvin probe microscopy and atomic force microscopy. The laser power density controls the thickness and structure of the Sb layer. Laser photooxidation thickens the amorphous Sb layer that emerged after native oxide formation. The thickening decreases the bandgap photoluminescence intensity and increases surface band bending. Further increase in the laser power density forms a multilayered antimonene phase with a rhombohedral structure. The crystalline Sb layer decreases the surface band bending due to changes in the work function. For the crystalline layer, the PL intensity further decreases. The effective work function model explains the experimental results. Finally, the study shows that it is possible to modify surface optoelectronic properties with a submicrometer lateral resolution. [ABSTRACT FROM AUTHOR]

Published
2023
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17. Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model.

Author

Kudriavtsev, Yu., Asomoza, R., and Moiseev, K. D.

Subjects
DEPTH profiling, SURFACE analysis, COMPUTER simulation, MAGNETIC resonance imaging, HETEROSTRUCTURES
Abstract

In this paper, the problem of depth profiling analysis of nanoscale heterostructures containing doped delta layers and quantum wells using the SIMS method is considered. Based on computer simulation data and previously obtained experimental data, we demonstrated that the RMR model most accurately and completely describes the redistribution of the analyzed element in ultrathin layers that occurs during ion sputtering. A comparative analysis of the surface roughness–ion mixing–recoil implantation (RMR) model with MRI (mixing-roughness-information depth) and UDS (up-and-down slope) models proposed by Hoffman and Dowsett, respectively, was performed. It was shown that the introduction into the MRI model of a parameter describing some layer of constant thickness, in which the components of the analyzed layer and matrix elements are uniformly mixed, is not quite justified. It is concluded that during depth profiling of a monoatomic layer, the center of mass of this layer shifts away from the surface, as predicted by the RMR model, rather than toward the surface, as predicted by the MRI model. It is found that preferential sputtering does not affect the experimental depth distribution of elements obtained by the SIMS method. [ABSTRACT FROM AUTHOR]

Published
2023
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