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During the past few decades, a significant amount of research effort has been dedicated toward developing skin-inspired sensors for real-time human motion monitoring and next-generation robotic devices. Although several flexible and wearable sensors have been developed in the past, the need of the hour is developing accurate, reliable, sophisticated, facile yet inexpensive flexible sensors coupled with neuromorphic systems or spiking neural networks to encode tactile information without the need for complex digital architectures, thus achieving true skin-like sensing with limited resources. In this work, we propose an approach entailing carbon nanofiber-polydimethylsiloxane composite-based piezoresistive sensors, coupled with spiking neural networks, to mimic skin-like sensing. The strain and pressure sensors have been combined with appropriately designed neural networks to encode analog voltages to spikes to recreate bioinspired tactile sensing and proprioception. To further validate the proprioceptive capability of the system, a gesture tracking smart glove, combined with a spiking neural network, was demonstrated. Wearable and flexible sensors with accompanying neural networks such as the ones proposed in this work will pave the way for a future generation of skin-mimetic sensors for advanced prosthetic devices, apparel integrable smart sensors for human motion monitoring, and human-machine interfaces.

We report the design in CMOS technology and the experimental characterization of an analog spiking neural network with on-chip unsupervised learning. Long-term synaptic memory is implemented using a floating-gate device in a standard 150 nm CMOS process. The neurons are operated with a voltage supply of only 0.4V, allowing an extremely low power dissipation with an energy dissipation per synaptic operation of about 55 fJ. The CMOS chip includes the circuits for implementing real-time learning of the network based on the Spike Time Dependent Plasticity algorithm. During the learning, the neurons produce pulses of ±4.5 V that change the synaptic weight by activating tunneling currents to change the charge in the floating gates.