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Pattern transfer by plasma etching is a traditional standard technology in microelectronics and other micron technologies. These technologies require vacuum conditions, which limit throughput, size, and low-cost fabrication. Recent developments in low cost atmospheric plasma technologies may be suitable to realize pattern transfer without vacuum conditions. Reactive atmospheric plasma jet etching has been used to transfer aluminum mask patterns to fused silica. Aluminum line patterns of 2.5 to 50 µm width on fused silica wafer are exposed to a static as well as a scanning CF4/O2 reactive atmospheric plasma jet with a footprint diameter of 0.85 mm (full width at half maximum), resulting in etching only the SiO2 and causing a nearly isotropic etch with an etch rate of about 200 nm/s. As a result, line narrowing, trapezoidal line cross-sections, and under-etching were observed. The successfully transferred line patterns with the demonstrated widths and depths are of technological interest in various fields of application. Therefore, this approach enables low-cost patterning of fused silica through the use of reactive atmospheric plasma jet etching for micron-scale pattern transfer. This advancement addresses the limitations of both traditional vacuum-based and wet etching methods.

Although laser ablation of polymers is well investigated the achievable surface quality of this process is limited due to laser-induced structural and morphological defects, arising surface roughness and redeposition of debris. Because high quality machining with laser radiation is highly requested, laser-induced plasma etching (LIPE) of polyimide film is studied for the development of ultraprecise surface machining (UPSM) techniques for various applications. Thus, the key parameters such as laser power, etching time, plasma distance of the LIPE are studied experimentally to explore the impact to the etching rate and the surface morphology. LIPE rates as low as 1 pm per laser pulse were measured that fulfil UPSM requirements. The footprint of the LIPE is circular shaped and enable therefore the development of areal processing strategies for surface correction, aspherization and freeform processing. In addition, regular nanostructures that feature a highly regular hexagonal pattern with a period of 117 nm to 125 nm were found at particular conditions.

Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage. These processes, including reactive ion etching (RIE) and plasma etching (PE), are performed at vacuum conditions and provide high selectivity and vertical side wall etched patterns but create high costs and efforts in maintenance due to the required machinery.In contrast to electrically generated plasmas, laser-induced micro plasmas are controllable sources of reactive species in gases at atmospheric pressure that can be used for dry etching of materials.In the present study, we have demonstrated the laser-induced plasma etching of monocrystalline silicon. A Ti:Sapphire laser has been used for igniting an optically pumped plasma in a CF4/O2 gas mixture near atmospheric pressure. The influence of process parameters, like substrate temperature, O2 concentration, plasma-surface distance, etching duration, pulse energy and crystal orientation on etching rate and surface morphology has been investigated.Typical etching rates of 2–12 µm x min−1 can be achieved by varying mentioned parameters with a decreasing etching rate during the process. Different morphologies can be observed due to the parameters set, smooth as well as rough surfaces or even inverted pyramids.The presented etching method provides an approach for precise machining of silicon surfaces with good surface qualities near atmospheric pressure and sufficiently high material removal rates for ultraprecise surface machining.

Submicron bubble formation in the subsurface range of soda-lime glass is investigated. The bubbles are induced by single femtosecond laser pulse irradiation with the wavelength of λ = 775 nm, the pulse duration of tp = 150 fs and the laser beam diameter of ∼12 μm. The data shows the changes of the morphologies of the soda-lime glass after laser irradiation with different pulse energy. Moreover, the data shows the detail of the cross-section view of the bubble during the Focused ion beam (FIB) cutting. It is found that the bubbles can be formed in a rather narrow pulse energy range with the bubbles in the size of 300 nm ∼3 μm which is much smaller than the laser beam diameter. Data presented in this article are related to the research article “Submicron bubbles/voids formation in the subsurface region of soda-lime glass by single pulse fs laser-induced spallation” [1]. Keywords: Femtosecond laser, Single pulse, Bubble, Surface modification, Nonlinear absorption, Soda-lime glass

BackgroundThe optimum risk score determining perioperative mortality and morbidity in cardiac surgery remains debated. Advanced glycation end products (AGEs) derived from glycaemic and oxidative stress accumulate to a comparable amount in skin and the cardiovascular system leading to a decline in organ function. We aimed to study the association between AGE accumulation measured as skin autofluorescence (sAF) and the outcome of cardiac surgery patients.MethodsBetween April 2008 and November 2016, data from 758 consecutive patients undergoing coronary artery bypass grafting, aortic valve replacement or a combined procedure were analyzed. Skin autofluorescence was measured using an autofluorescence reader. Beside mortality, for the combined categorical morbidity outcome of each patient failure of the cardiac-, pulmonary-, renal- and cerebral system, as well as reoperation and wound healing disorders were counted. Patients without or with only one of the outcomes were assigned zero points whereas more than one outcome failure resulted in one point. Odds ratios (ORs) were estimated in multivariable logistic regression analysis with other preoperative parameters and the established cardiac surgery risk score systems EuroSCORE II and STS score.ResultsSkin autofluorescence as non-invasive marker of tissue glycation provided the best prognostic value in identifying patients with major morbidity risks after cardiac surgery (OR = 3.13; 95%CI 2.16-4.54). With respect to mortality prediction the STS score (OR = 1.24; 95%CI 1.03-1.5) was superior compared to the EuroSCORE II (OR = 1.17: 95%CI 0.96-1.43), but not superior when compared to sAF (OR = 6.04; 95%CI 2.44-14.95).ConclusionThis finding suggests that skin autofluorescence is a good biomarker candidate to assess the perioperative risk of patients in cardiac surgery. Since the EuroSCORE does not contain a morbidity component, in our view further sAF measurement is an option.

Electrochemical metallization memories have received much attention as candidates for next generation non-volatile memory applications, due to their fast switching speed, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge–Sb–Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. In this work, the influence of different electrode materials on bipolar resistive switching characteristics of amorphous Ge–Sb–Te thin films with close composition to 2:2:5, prepared by pulsed laser deposition, is studied. Detailed investigations by current-voltage measurements, secondary ion mass spectrometry and cross-sectional transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy are presented. Depending on the utilized electrode material, analog switching (Cu, Ag, Ti), digital switching (Co, Cr, Ta, Al) or no switching (Pt, Au and Cr-CrOx) occurs. This work shows that the switching behavior of Ge–Sb–Te strongly depends on the solubility and reactivity of the electrode material. [ABSTRACT FROM AUTHOR]