Search

The recent advances in super-resolution fluorescence microscopy, including single-molecule localization microscopy (SMLM), has enabled the study of previously inaccessible details, such as the organization of proteins within cellular compartments and even nanostructures in nonbiological nanomaterials, such as the polymers and semiconductors. With such developments, the need for the development of various computational nanostructure analysis methods for SMLM images is also increasing; however, this has been limited to protein cluster analysis. In this study, we developed an edge structure analysis method for pointillistic SMLM images based on the line edge roughness and power spectral density analyses. By investigating the effect of point properties in SMLM images, such as the size, density, and localization precision on the roughness measurement, we successfully demonstrated this analysis method for experimental SMLM images of actual samples, including the semiconductor line patterns, cytoskeletal elements, and cell membranes. This systematic investigation of the effect of each localization rendering parameter on edge roughness measurement provides a range for the optimal rendering parameters that preserve the relevant nanoscale structure of interest. These new methods are expected to expand our understanding of the targets by providing valuable insights into edge nanoscale structures that have not been previously obtained quantitatively.

White-light phase-shifting interferometry (WLPSI) is widely used for obtaining surface profiles of inspection targets in liquid-crystal displays (LCD) and semiconductor manufacturing processes. Phase errors caused by irregular and nonlinear scanner movement are inevitable in WLPSI. Moreover, these errors affect the measurement stability. It is difficult to eliminate the mechanical and electrical delay of scanner movement entirely. A novel method, to the best of our knowledge, is proposed that consists of a scanner position tracking system and a phase correction algorithm called compensated peak detection and modified bucket algorithm. The proposed method is experimentally verified and outperforms the conventional phase corrections in both the measurement accuracy and the repeatability.

An optical microscopy system as a non-destructive method for measuring critical dimension (CD) is widely used for its stability and fastness. In case of transparent thin film measurement, it is hard to recognize the pattern under white light illumination due to its transparency and reflectance characteristics. In this paper, the optical measurement system using multispectral imaging for CD measurement of transparent thin film is introduced. The measurement system utilizes an Acousto-Optic Tunable Filter (AOTF) to illuminate the specimen with various monochromatic lights. The relationship between spectral reflectance and CD measurement are deduced from series of measurement experiments with two kinds of Indium Tin Oxide (ITO) patterned samples. When the difference of spectral reflectance between substrate and thin film layers is large enough to yield a large image intensity difference, the thin film layer can be distinguished from substrate, and it is possible to measure the CD of transparent thin films. This paper analyzes CD measurement of transparent thin film with reflectance theory and shows that the CD measurement of transparent thin film can be performed successfully with the proposed system within a certain wavelength range filtered by AOTF.