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Off-axis electron holography and micromagnetic simulations are used to investigate magnetization reversal mechanisms and remanent states in exchange-biased submicron Co(sub 84)Fe(sub 16)/Fe(sub 54)Mn(sub 46) patterned elements. Using an interface exchange field that had a fixed amplitude and direction in the simulations provided a good fit to the experimental data, and small disagreements were attributed to structural imperfections.

Off-axis electron holography and micromagnetic simulations are used to investigate the interlayer coupling and magnetization reversal of patterned, submicron Co/Au/Ni nanostructures, shaped as diamonds, ellipses, and rectangles. The study shows that antiferromagnetic coupling between the ferromagnetic layers, attributed to the strong Co demagnetization field, was visualized directly and simulated hysteresis loops showed reasonable agreement with experimental results.

For the investigation of 2D layered materials such as graphene, transition-metal dichalcogenides, boron nitride, and their heterostructures, dedicated substrates are required to enable unambiguous identification through optical microscopy. A systematic study is conducted, focusing on various 2D layered materials and substrates. The simulated colors are displayed and compared with microscopy images. Additionally, the issue of defining an appropriate index for measuring the degree of visibility is discussed. For a wide range of substrate stacks, layer thicknesses for optimum visibility are given along with the resulting sRGB colors. Further simulations of customized stacks can be conducted using our simulation tool, which is available for download and contains a database featuring a wide range of materials. [ABSTRACT FROM AUTHOR]

Provides information on a study using off-axis electron holography to investigate the magnetization reversal behavior of submicron-sized patterned cobalt elements. Methodology used to conduct the study; Preparation of linear arrays of rectangular Co elements of nominal thickness 30 nm; Findings of the study.

Transmission electron microscopy (TEM) makes it possible to obtain insight into the structure, composition and reactivity of photocatalysts, which are of fundamental interest for sustainable energy research. Such insight can be used for further material optimization. Here, we combine conventional TEM analysis of photocatalysts with environmental TEM (ETEM) and photoactivation using light. Two novel types of TEM specimen holder that enable in situ illumination are developed to study light-induced phenomena in photoactive materials, systems and photocatalysts at the nanoscale under working conditions. The technological development of the holders is described and two representative photo-induced phenomena are studied: the photodegradation of Cu2O and the photodeposition of Pt onto a GaN:ZnO photocatalyst. [ABSTRACT FROM AUTHOR]

Decorating semiconductor surfaces with plasmonic nanoparticles (NPs) is considered a viable solution for enhancing the absorptive properties of photovoltaic and photodetecting devices. We propose to deposit silver NPs on top of a semiconductor wafer by a cheap and fast electroless plating technique. Optical characterization confirms that the random array of electroless-deposited NPs improves absorption by up to 20% in a broadband of near-infrared frequencies from the bandgap edge to 2000 nm. Due to the small filling fraction of particles, the reflection in the visible range is practically unchanged, which points to the possible applications of such deposition method for harvesting photons in nanophotonics and photovoltaics. The broadband absorption is a consequence of the resonant behavior of particles with different shapes and sizes, which strongly localize the incident light at the interface of a high-index semiconductor substrate. Our hypothesis is substantiated by examining the plasmonic response of the electroless-deposited NPs using both electron energy loss spectroscopy and numerical calculations.

We report a study of the structural and optical properties of near-surface InGaN/GaN single quantum wells, grown by metalorganic chemical vapour deposition, as a function of underneath layer structure and GaN capping thickness. Special attention is paid to characterize properties which are important for non-radiative coupling applications, such as emission intensity at peak wavelength and surface morphology. We observe that utilization of indium containing underneath structures results in high optical quality while increasing surface roughness. Optical performance can be further improved with InGaN/GaN superlattice structures instead of a single InGaN underneath layer. Time-resolved photoluminescence measurements of samples with different GaN capping thicknesses show that room temperature photoluminescence decay time increases with decreasing GaN capping thickness until surface states related non-radiative recombination processes start to play a significant role at very small capping thicknesses (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near infrared (NIR) including the fiber communication bands (1.31/1.55 μm). However, to suppress afterpulse noise due to trapped avalanche charge, they must be gated with megahertz repetition frequencies, thereby severely limiting the count rate in NIR applications. Here, the authors show gating frequencies for InGaAs APDs well beyond 1 GHz. Using a self-differencing technique to sense much weaker avalanches, the authors reduce drastically afterpulse noise. At 1.25 GHz, they obtain a detection efficiency of 10.8% with an afterpulse probability of 6.16%. In addition, the detector features low jitter (55 ps) and a count rate of 100 MHz. [ABSTRACT FROM AUTHOR]

The authors present a systematic study of the effect of InAs deposition time on single photon detectors based on quantum dot resonant tunneling diodes. A dramatic improvement in the dark counts due to the electron generation-recombination events in the dots is found by reducing the size of the dots. The dark count rate can be improved to less than 6.6×10-10 ns-1 while maintaining a single photon detection efficiency of 2%. [ABSTRACT FROM AUTHOR]

Examines the equilibrium tunneling between two-dimensional and quasi-one-dimensional electron gases in devices fabricated by in situ focused ion beam lithography. Application of bias voltage; Effect of the alteration of the dimensionality of the electron gas; Importance of the contribution of the overlap integral of the electron wave functions.

The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2. We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely known thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms, and material interfaces. [ABSTRACT FROM AUTHOR]

Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe 2 ) on the growth of ML domains and their impact on the density of defects. The aim is to find parameter windows that enable the deposition of WSe 2 ML with high crystal quality, i.e. a low density of defects. Our findings confirm that the growth temperature has a large influence on the crystal quality of TMDC, significantly stronger than found for the W to Se precursor ratio. Raising the growth temperatures in the range of 688 °C to 791 °C leads to an increase of the number of defects, dominating photoluminescence (PL) at low temperatures (5.6 K). In contrast, an increase of the molar precursor ratio (DiPSe/WCO) from 1000 up to 100 000 leads to less defect-related PL at low temperatures., (© 2023 IOP Publishing Ltd.)

Wavelength conversion at the single-photon level is required to forge a quantum network from distinct quantum devices. Such devices include solid-state emitters of single or entangled photons, as well as network nodes based on atoms or ions. Here we demonstrate the conversion of single photons emitted from a III-V semiconductor quantum dot at 853 nm via sum frequency conversion to the wavelength of the strong transition of Yb + ions at 370 nm. We measure the second-order correlation function of both the unconverted and the converted photon and show that the single-photon character of the quantum dot emission is preserved during the conversion process.

Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. Here we employ strain confinement in monolayer MoSe 2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns -1 , which exceeds reported radiative rates of WSe 2 QEs by 2 orders of magnitude.

We have investigated the chemical state of In(Zn)P/ZnS core/shell nanocrystals (NCs) for color conversion applications using hard X-ray absorption spectroscopy (XAS) and photoluminescence excitation (PLE). Analyses of the edge energies as well as the X-ray absorption fine structure (XAFS) reveal that the Zn(2+) ions from ZnS remain in the shell while the S(2-) ions penetrate into the core at an early stage of the ZnS deposition. It is further demonstrated that for short growth times, the ZnS shell coverage on the core was incomplete, whereas the coverage improved gradually as the shell deposition time increased. Together with evidence from PLE spectra, where there is a strong indication of the presence of P vacancies, this suggests that the core-shell interface in the In(Zn)P/ZnS NCs are subject to substantial atomic exchanges and detailed models for the shell structure beyond simple layer coverage are needed. This substantial atomic exchange is very likely to be the reason for the improved photoluminescence behavior of the core-shell particles compare to In(Zn)P-only NCs as S can passivate the NCs surfaces.

Environmentally friendly nanocrystals (NCs) such as InP are in demand for various applications, such as biomedical labeling, solar cells, sensors, and light-emitting diodes (LEDs). To fulfill their potential applications, the synthesis of such high-quality "green" InP NCs required further improvement so as to achieve better stability, higher brightness NCs, and also to have a more robust synthesis route. The present study addresses our efforts on the synthesis of high-quality In(Zn)P/ZnS core-shell NCs using an air- and moisture-stable ZnS single molecular precursor (SMP) and In(Zn)P cores. The SMP method has recently emerged as a promising route for the surface overcoating of NCs due to its simplicity, high reproducibility, low reaction temperature, and flexibility in controlling the reaction. The synthesis involved heating the In(Zn)P core solution and Zn(S2CNR2) (where R = methyl, ethyl, butyl, or benzyl and referred to as ZDMT, ZDET, ZDBT, or ZDBzT, respectively) in oleylamine (OLA) to 90-250 °C for 0.5-2.5 h. In this work, we systematically studied the influence of different SMP end groups, the complex formation and stability between the SMP and oleylamine (OLA), the reaction temperature, and the amount of SMP on the synthesis of high-quality In(Zn)P/ZnS NCs. We found that thiocarbamate end groups are an important factor contributing to the low-temperature growth of high-quality In(Zn)P/ZnS NCs, as the end groups affect the polarity of the molecules and result in a different steric arrangement. We found that use of SMP with bulky end groups (ZDBzT) results in nanocrystals with higher photoluminescence quantum yield (PL QY) and better dispersibility than those synthesized with SMPs with the shorter alkyl chain groups (ZDMT, ZDET, or ZDBT). At the optimal conditions, the PL QY of red emission In(Zn)P/ZnS NCs is 55 ± 4%, which is one of the highest values reported. On the basis of structural (XAS, XPS, XRD, TEM) and optical characterization, we propose a mechanism for the growth of a ZnS shell on an In(Zn)P core.

The formation of nanowires (NWs) by reactive ion etching (RIE) of maskless GaN layers was investigated. The morphological, structural and optical characteristics of the NWs were studied and compared to those of the layer they evolve from. It is shown that the NWs are the result of a defect selective etching process. The evolution of density and length with etching time is discussed. Densely packed NWs with a length of more than 1 μm and a diameter of ∼60 nm were obtained by RIE of a ∼2.5 μm thick GaN layer. The NWs are predominantly free of threading dislocations and show an improvement of optical properties compared to their layer counterpart. The production of NWs via a top down process on non-masked group III-nitride layers is assessed to be very promising for photovoltaic applications.

The tunneling current between an electron gas with a periodic potential in two dimensions and a plain two-dimensional electron system (2DES) has been studied. The strength of the periodic potential, the subband energy of the plain 2DES, and an applied in-plane magnetic field were varied, mapping the Fourier transform of the periodic wave function. Periodic peaks were observed and explained by translations in the reciprocal lattice. When the potential was strongly modulated to form an array of antidots, commensurability peaks were seen in lateral transport, but, as expected, not in tunneling.

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.

: Morphological evolution associated with silicidation of Co thin films deposited on (100) and (111) Si substrates has been followed using transmission electron microscopy with in situ thermal annealing from ambient temperature up to 850 degreesC. Noticeable structural changes associated with the formation of CoSi2 occur at temperatures as low as 400 degreesC and the reaction is essentially complete at about 500 degreesC. Prolonged heating above 500 degreesC leads to CoSi2 grain growth and coalescence and, finally, to pinholes formation. Silicidation of Co films on (100) and (111) Si substrates follows the same pattern. The morphology of films annealed in situ is similar to those annealed ex situ except that the Si/CoSi2 interface appears to be much rougher. This behavior is associated with the specific geometry of cross-sectional TEM specimens, where surface diffusion dominates bulk diffusion. Very thin Co films, which have less contribution from surface diffusion than thicker films, are ideal for studying dynamic phenomena at Co/Si reactive interfaces.