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Transparent conductive oxide (TCO) film is the most widely used front electrode in silicon heterojunction (SHJ) solar cells. A copper metallization scheme can be applied to the SHJ process. The abundance of zinc in the earth’s crust makes aluminum-doped zinc oxide (AZO) an attractive low-cost substitute for indium-based TCOs. No work has focused on the properties of the copper and AZO layers on the textured silicon for solar cells. This work deposited an aluminum-doped zinc oxide layer and copper metal layer on textured (001) silicon by a sputtering to form Cu/AZO/Si stacks. The structures of Cu/AZO/Si are characterized by scanning electron microscope (SEM), scanning transmission electron microscope (STEM), and energy-dispersive X-ray spectrometer (EDS). The results show that the copper thin film detached from AZO in the valley of the textured silicon substrate at a temperature of 400 °C. Additionally, the gap between the copper and AZO layers increases as temperature increases, and the 65 nm thickness AZO layer was found to be preserved up to 800 °C.

When B and V are added to CoFe material, the mechanical strength and spin tunneling polarization of a CoFe alloy can be improved and enhanced by the high tunneling magnetoresistance (TMR) ratio. Based on these reasons, it is worthwhile investigating Co40Fe40V10B10 films. In this work, X-ray diffraction (XRD) showed that Co40Fe40V10B10 thin films have some distinct phases including CoFe (110), CoFe (200), FeB (130), and V (110) diffracted peaks with the strongest diffracted peak for 30 nm. The lowest low-frequency alternate-current magnetic susceptibility (&chi, ac) was detected at 30 nm because the large grain distribution inducing that high coercivity (Hc) enhances the spin coupling strength and low &chi, ac. The external field (Hext) had difficulty rotating in the spin state, hence, the spin sensitivity was reduced and the &chi, ac value decreased due to increased surface roughness. The 20 mm thickness had the highest &chi, ac 1.96 &times, 10&minus, 2 value at 50 Hz of an optimal resonance frequency (fres). The surface energy increased from 34.2 mJ/mm2 to 51.5 mJ/mm2 for Co40Fe40V10B10 films. High surface energy had corresponding strong adhesive performance. According to the magnetic and surface energy results, the optimal thickness is 20 nm due as it had the highest &chi, ac and strong adhesion.

We examined two targets containing Co40Fe40B20and Co60Fe20B20. We deposited Co40Fe40B20and Co60Fe20B20monolayer thin films of various thicknesses on glass substrates through DC magnetron sputtering; the thicknesses ranged from 25 to 200 Å. The thermal properties of the Co40Fe40B20and Co60Fe20B20thin films were determined using a differential scanning calorimeter (DSC). The thermal properties included the glass transition temperature (Tg), onset crystallization temperature (Tx), and glass-forming ability, which were determined according to these values. Using the Kissinger formula revealed that the activation energy of the Co60Fe20B20with a thickness of 75 Å is the highest, implying that crystallization was the lowest and the Co60Fe20B20film showed anticrystallization properties. However, the energy of 75 Å Co40Fe40B20thin films was the lowest, which is opposite to that of Co60Fe20B20. This observation can be reasonably explained based on the concentration of Co or Fe. Therefore, a thickness of 75 Å is critical.