1. Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
- Author
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Janka Biznárová, Amr Osman, Emil Rehnman, Lert Chayanun, Christian Križan, Per Malmberg, Marcus Rommel, Christopher Warren, Per Delsing, August Yurgens, Jonas Bylander, and Anita Fadavi Roudsari
- Subjects
Physics ,QC1-999 ,Electronic computers. Computer science ,QA75.5-76.95 - Abstract
Abstract We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged T 1 energy relaxation times of up to 270 μs, corresponding to Q = 5 million, and a highest observed value of 501 μs. Through materials analysis techniques and numerical simulations we investigate the dominant source of energy loss, and devise and demonstrate a strategy toward its mitigation. Growing aluminum films thicker than 300 nm reduces the presence of oxide, a known host of defects, near the substrate-metal interface, as confirmed by time-of-flight secondary ion mass spectrometry. A loss analysis of coplanar waveguide resonators shows that this results in a reduction of dielectric loss due to two-level system defects. The correlation between the enhanced performance of our devices and the film thickness is due to the aluminum growth in columnar structures of parallel grain boundaries: transmission electron microscopy shows larger grains in the thicker film, and consequently fewer grain boundaries containing oxide near the substrate-metal interface.
- Published
- 2024
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