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Abstract Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and deep‐UV transparent conducting oxide. Here, the demonstration of thin film transistors (TFTs) with full deep‐UV transparency is reported, including electrodes, gate oxide, and substrate. The lightly La‐doped SrSnO3 for the channel layer is grown on MgO (100) substrates with buffer layers by pulsed laser deposition. TFTs with a metal—insulator–semiconductor structure are fabricated using high‐k perovskite dielectric LaScO3 as the gate oxide. A degenerately La‐doped SrSnO3 is used as the gate, the source, and the drain electrodes to obtain good ohmic contact with the channel layer as well as UV transparency. The resultant device shows a field effect mobility value of ≈24 cm2 V−1 s−1 and an on/off ratio >106. The optical transmittance of the entire device (including the substrate) is found to be >75% at 300 nm in wavelength. Furthermore, the electrical characteristics of the device exhibit excellent stability under visible irradiation. This research highlights the potential of SrSnO3 in advancing the field of UV optoelectronics and UV transparent electronics.

Abstract Reducing the leakage current through the gate oxide is becoming increasingly important for power consumption reduction as well as reliability in integrated circuits as the semiconducting devices continue to scale down. Here, this work reports on the high‐k dielectric SrHfO3 (SHO) based devices with ultralow leakage current density via pulsed laser deposition (PLD). The ultralow current density is achieved by optimizing the growth conditions and the associated structural properties. In the optimized conditions, the dielectric properties of the 50‐nm‐thick SHO capacitors are measured: high dielectric constant (κ = 32), low leakage current density ( 4 MV cm−1). The surprisingly low leakage current density of SHO is ascribed to the large bandgap (≈6 eV), the large conduction band offset (CB offset > 3 eV) with respect to the semiconductor, and the low density of defect states inside the bandgap. The optimized SHO dielectric with high dielectric constant and ultralow leakage current density is proposed for future low‐power consumption devices based on Si as well as perovskite oxide semiconductors.

Background and PurposeAdvantages of new oral anticoagulations may be greater in atrial fibrillation (AF) patients of poor anticoagulation control with warfarin. The SAMe-TT2R2 scoring system, based on clinical variables, was recently developed to aid in identifying these patients. In this study, we investigated the association of this clinical composite score with genetic factors related warfarin dosing and the quality of anticoagulation control.MethodsClinical and genetic data were collected from 380 consecutive Korean patients with AF (CHA2DS2-VASc score, 3.5±1.8) who were followed for an average of 4 years. We evaluated factors associated with time in therapeutic range (TTR, INR 2-3), including the CYP2C9 and VKORC1 genotypes and the SAMe-TT2R2 score (Sex female, Age two co-morbidities], Treatment [interacting drugs, e.g., amiodarone], Tobacco use within 2 years [doubled], and Race non-white [doubled]).ResultsThe average SAMe-TT2R2 score was 3.4±0.9, range 2-7; and 153 patients (40.2%) had SAMe-TT2R2 scores ≥4. Time in specific INR ranges varied depending on the VKORC1 genotype but not with the CYP2C9 genotype or the SAMe-TT2R2 score. TTR was higher in patients with the VKORC1 1173C>T than in VKORC1 TT (61.7±16% vs. 56.7±17.4%, P=0.031). Multivariate testing showed that VKORC1 genotype but not the SAMe-TT2R2 score was significantly associated with labile INRs. There was no correlation between the SAMe-TT2R2 scores and pharmacogenetic data.ConclusionsA genetic factor, but none of the common clinical and demographic factors, as combined in the SAMe-TT2R2 score, was associated with the quality of anticoagulation control in Korean patients with AF.

During gross anatomy head and neck laboratory session, one dissection group observed an abnormal anatomic variation in the posterior cranial fossa of a 94-year-old male cadaver. The internal occipital crest was not aligned with internal occipital protuberance and groove for superior sagittal sinus. It seemed that the internal occipital protuberance was shifted significantly to the right side. As a result the skull was overly stretched in order to connect with the internal occipital ridge. These internal skull variations of occipital bone landmarks can influence the location of adjacent dural venous sinuses and possibly influence cerebrospinal fluid flow. Similar anatomical anomalies have been attributed to presence of hydrocephalus and abnormalities in cisterna magna.

The wrist is one of the most complex joints in our body, composed of eight bones. Therefore, measuring the angles of this intricate wrist movement can prove valuable in various fields such as sports analysis and rehabilitation. Textile stretch sensors can be easily produced by immersing an E-band in a SWCNT solution. The lightweight, cost-effective, and reproducible nature of textile stretch sensors makes them well suited for practical applications in clothing. In this paper, wrist angles were measured by attaching textile stretch sensors to an arm sleeve. Three sensors were utilized to measure all three axes of the wrist. Additionally, sensor precision was heightened through the utilization of the Multi-Layer Perceptron (MLP) technique, a subtype of deep learning. Rather than fixing the measurement values of each sensor to specific axes, we created an algorithm utilizing the coupling between sensors, allowing the measurement of wrist angles in three dimensions. Using this algorithm, the error angle of wrist angles measured with textile stretch sensors could be measured at less than 4.5°. This demonstrated higher accuracy compared to other soft sensors available for measuring wrist angles.