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We present a set of thermomechanical design rules to support and accelerate future (PV) module developments. The design rules are derived from a comprehensive parameter sensitivity study of different PV module layers and material properties by finite element method simulations. We develop a three dimensional finite element method (FEM) model, which models the PV module geometry in detail from busbar and ribbons up to the frame including the adhesive. The FEM simulation covers soldering, lamination, and mechanical load at various temperatures. The FEM model is validated by mechanical load tests on three 60-cell PV modules. Here, for the first time, stress within a solar cell is measured directly using stress sensors integrated in solar cells (SenSoCells®). The results show good accordance with the simulations. The parameter sensitivity study reveals that there are two critical interactions within a PV module: (1) between ribbon and solar cell and (2) between front/back cover and interconnected solar cells. Here, the encapsulant plays a crucial role in how the single layers interact with each other. Therefore, its mechanical properties are essential, and four design rules are derived regarding the encapsulant. Also four design rules concern front and back sides, and three address the solar cells. Finally, two design rules each deal with module size and frame, respectively. Altogether we derive a set of 15 thermomechanical design rules. As a rule of thumb of how well a bill of material will work from a thermomechanical point of view, we introduce the concept of specific thermal expansion stiffness $ {\hat{E}}_{\alpha }=E\cdotp \alpha \cdotp {A}_{\mathrm{j}}\cdotp h $ as the product of Young's modulus E, coefficient of thermal expansion $\alpha$, joint area A$_{j}$, and materials height h. The difference between two materials is a measure of how much thermal strain one material can induce in another. A strong difference means that the material with the larger value will induce thermal strain in the other.

This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14% abs or 0.84% abs , respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.

During the crystallization of directionally solidified silicon such as multicrystalline or cast quasi-single crystalline silicon, the diffusion of metal impurities from crucible and coating into the solid silicon ingot at high temperatures creates a severe contamination issue in the edge region of the ingot, the so called red zone. We present an effective diffusion barrier which greatly reduces this detrimental metal diffusion. Silicon wafers are coated with a layer system of silicon oxide and silicon nitride by chemical vapor deposition and are placed on the bottom of the crucible. Using this technique, the metal contamination in the red zone can be reduced by about one order of magnitude. This leads to better solar cell performance of wafers fabricated from this ingot area. Also, less ingot material has to be discarded leading to higher wafer yield per ingot.

To investigate the rear side of bifacial p-type Czochraslki-grown silicon PERC solar cells, the present work combines Sentaurus Device simulation – calibrated with extensively characterized samples – and the subsequent fabrication of solar cells according to the simulation findings. The authors investigate the physical alteration of rear-side characteristics in the context of an additional rear-side illumination. The additional injection represents an further factor for the balance of carrier generation, recombination and series resistances which in turn influences the design rules for the rear side layout. Our detailed bifacial simulations include these physical aspects and we derive design solutions for different bifacial illumination scenarios for a bifacial p-doped PERC solar cell. Using an industrial PERC process, solar cells with laser contact openings (LCO) and a rear aluminum grid were produced according to the simulation results with a wide variation in rear side layout parameters. The PERC batches showed a rather constant medium (front side) efficiency of η = 20.8±0.2% and a bifaciality of 66 to 77% depending on the rear layout, allowing us to investigate the rear-side characteristics in detail and to compare them with the effects predicted by the simulations. We processed an aluminum rear contact grid with finger widths as small as 100 µm and successfully aligned it onto the LCO with 30 µm contact openings on full-area 156x156 mm 2 wafers. We reached good accordance between the monofacial measurements from front and rear side and our simulation model and could thus predict bifacial illumination results by modeling for two issues: 1. Planar rear sides have an advantage over pyramid textured rear sides for 1000 W/m² front illumination unless additional rear illumination exceeds 250 W/m². 2. As soon as any rear illumination is added to the front-illuminated PERC solar cell, 100 µm thin fingers at the rear side have an output power advantage compared to 150 µm and 200 µm wide fingers.

In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

In this work we present our approach to realize an industrial process that allows cell efficiencies up to and above 21%. Based on a loss analysis we systematically investigate the feasible options to improve the efficiency with device simulations and production experiments. Subsequently we perform sensitivity analyses particularly for various silicon wafer materials to ensure stable process capability. Our best prototype process with optimized front and rear side passivation and enhanced laser contact patterning has demonstrated a maximum efficiency of 20.9% with a very high V OC of 670 mV on high-lifetime mono material. We were able to assemble 60-cell based modules with more than 305Wp.

In this work, we present our progress in the industrial p-type PERC technology [1, 2]. Based on device simulations we continuously develop an efficiency roadmap for a steady improvement of our PERC (passivated emitter and rear cell) process. Following this simulation based approach, we effectively improve the front side metallization and the emitter characteristics. Currently, our best prototype process has reached a conversion efficiency well over 21% which enables the manufacturing of a 60-cell based module with a power of 310W. Our best cell so far has a conversion efficiency of 21.5% which has been confirmed by the calibration laboratory of Fraunhofer ISE. This is to our knowledge the highest efficiency reported for industrial-size silicon solar cells with screen-printed metal front and rear contacts.