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Abstract We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200–700 °C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as ≡Si–H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures ≥400 °C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.

In this work, we study the thermal stability of a hydrothermally treated stainless steel (SS) selective solar absorber by annealing in air in a temperature range between 300 °C and 700 °C for a soaking time of 2 h. Thermal stability testing in the presence of air is critical if the vacuum is breached. Therefore, the SS was characterized by X-ray diffraction (XRD), mechanical, and optical techniques. The XRD analysis shows that the grain size of the as-treated absorber is 67 nm, whereas those of the annealed absorbers were found to be in the range between 66 and 38 nm. The phase of the as-treated and annealed SS was further identified by XRD as Fe2O3. The EDS result shows that the elemental components of the SS were C, Cr, Fe, and O. The strain (ε) and stress (σ) calculated for the as-treated absorber are 1.2 × 10−1 and −2.9 GPa, whereas the annealed absorbers are found in the range of 4.4 × 10−1 to 5.2 × 10−1 and −121.6 to −103.2 GPa, respectively, at 300–700 °C. The as-treated SS absorbers exhibit a good spectra selectivity of 0.938/0.431 = 2.176, which compares with 0.941/0.403 = 2.335 after being annealed at 300 °C and 0.884/0.179 = 4.939 after being annealed at 700 °C. These results indicate a small improvement in absorptivity (0.941) and emissivity (0.403) after annealing at 300 °C, followed by a significant decrease after annealing at 700 °C. The obtained analysis confirms that the annealed SS absorber exhibits excellent selectivity and is suitable to withstand any thermal condition (≤700 °C) in air. Thus, using a cost-effective approach as demonstrated in this study, the as-treated and annealed SS absorber could be used for photo-thermal conversion applications. [ABSTRACT FROM AUTHOR]

Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD) technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD) and transmission electron microscopy (TEM) have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas. [ABSTRACT FROM AUTHOR]

The effect of naturally occurring oxide and oxidised layers formed by ion implantation and thermal oxidation on hydrogen absorption was investigated in Ti-6Al-4V alloy samples as a possible candidate for hydrogen storage. The samples were implanted with two different oxygen fluences (1.5 × 10 17 and 3.0 × 10 17 ions/cm 2 ) at room temperature and 550 °C, and comparison was made with thermally oxidised samples at a temperature of 550 °C for 2 h. All samples were afterwards hydrogenated at 550 °C for 2 h. The elastic recoil detection analysis show that approx.14 at.% H was absorbed in as-received and thermally oxidised samples. The native oxide layer and the oxidised layer formed by thermal oxidation enhanced the absorption of hydrogen regardless of their different thickness and stoichiometry. The amount of hydrogen, however, was significantly lower in implanted samples, approx. 3–5 at.%, suggesting that oxygen ions implanted in alloy prevent hydrogen absorption. It was found that the average amount of absorbed hydrogen within the projected depth was reduced due to implantation of oxygen ions regardless of their fluences and implantation temperature. The hydrides were not determined in any of investigated samples while the surface hardness of all samples increases after hydrogenation although to different extent. [ABSTRACT FROM AUTHOR]

• Surface treatment of the stainless steel (SS) within the shortest duration of 2 h using hydrothermal method was successful. • The treated surface exhibits an excellent absorptance of 0.931 in the UV–vis-NIR wavelength region. • Thus, treated surface of the SS has the potential for its use in the photon-thermal conversion application. This work aims to improve the absorption properties of stainless-steel (SS) (434-L) using a hydrothermal treatment method. Therefore, four SS films were prepared at different treatment times, i.e., 1 h, 2 h, 3 h and 24 h. The XRD results revealed the transformation of the crystal structure of the as-received SS from Body-centered cubic (BCC) to Face-centered cubic (FCC) of FeFe 2 O 4 after treatment at 200 °C. The SEM results showed micro-pores distributed across the surface of the films, whereas the AFM results revealed an increment in surface roughness of the films as the duration of the treatment extended. The absorptance (α) of the SS was enhanced from 0.350 to 0.931 after the treatment. This improvement was attributed to surface oxidation and micro-pores distributed across the surface of the films, as confirmed by EDS and SEM results. On the other hand, the high emissivity (0.41) recorded was attributed to the large surface roughness (137.8 nm) of the film. Based on the UV–vis results, the optical reflectance of the film in the short wavelength of the solar spectrum was reduced from ~80 to ~8% resulting in a significant improvement in the absorptance of the SS. [ABSTRACT FROM AUTHOR]