1. Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)
- Author
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P. Gloesekoetter, S. O. Kim, Karl Goser, T. Reimann, H. van Husen, C. Pacha, Werner Prost, and Franz-Josef Tegude
- Subjects
Physics ,Diode–transistor logic ,Pass transistor logic ,business.industry ,Electrical engineering ,Logic family ,Emitter-coupled logic ,Resistor–transistor logic ,Integrated injection logic ,Logic gate ,Hardware_INTEGRATEDCIRCUITS ,business ,NMOS logic ,Hardware_LOGICDESIGN ,Elektrotechnik - Abstract
In this paper the design and measurement results of RTBT monosatble-bistable transition logic element (MOBILE) gates are analyzed. By taking advantage from the multi-state behavior of resonant tunneling devices (RTD) the logic depth and the circuit complexity per logic function is reduced at the gate level. Due to the combination of a three terminal device (HBT) with the two terminal RTD the vertical RTBT has enhanced driving capabilites and is a promising candidate as a precursor for future nanoscaled ULSI circuits.
- Published
- 2002