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Your search keyword '"Guan-Shyan Lin"' showing total 3 results
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1. Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device

Author

Su, V.C., Kuo, James B., Lin, I.S., Guan-Shyan Lin, Chen, David C., Chune-Sin Yeh, Cheng-Tzung Tsai, and Ma, Mike

Subjects
Metal oxide semiconductors -- Usage, Stress analysis (Engineering), Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

The shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) n-type metal-oxide-semiconductor (NMOS) device are discussed. Results suggest the occurrence of kink-effect behaviors at higher drain current in the saturation region.

Published
2008

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