160 results on '"Goano, Michele"'
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2. Reducing inter-pixel crosstalk in HgCdTe detectors
3. Non-Monochromatic 3D Optical Simulation of HgCdTe Focal Plane Arrays
4. Bridging scales in multiphysics VCSEL modeling
5. Small-Signal Modeling of Dissipative Carrier Transport in Nanodevices with Nonequilibrium Green’s Functions
6. Simulation of Small-Pitch HgCdTe Photodetectors
7. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives.
8. Heterostructure modeling considerations for Ge-on-Si waveguide photodetectors
9. Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors
10. Numerical Modeling of SRH and Tunneling Mechanisms in High-Operating-Temperature MWIR HgCdTe Photodetectors
11. Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
12. Modeling Photocurrent Spectra of Single-Color and Dual-Band HgCdTe Photodetectors: Is 3D Simulation Unavoidable?
13. Nonequilibrium Green's Function Modeling of Trap-Assisted Tunneling in In_{x}Ga_{1-x}N/GaN Light-Emitting Diodes
14. Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation
15. Calculation of Auger Lifetimes in HgCdTe
16. Full-Band Monte Carlo Simulation of HgCdTe APDs
17. Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation
18. Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg1−x Cd x Te
19. Ab initio, nonlocal pseudopotential, and full-zone $${k \cdot p}$$ computation of the electronic structure of wurtzite BeO
20. Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study
21. Design and Characterization of Liquid Crystal Tunable VCSELs for Optical Coherence Tomography
22. Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors
23. Efficient quasi-TEM frequency-dependent analysis of lossy multiconductor lines through a fast reduced-order FEM model
24. Revisiting the partial-capacitance approach to the analysis of coplanar transmission lines on multilayered substrates
25. Broad-Band Coaxial Directional Couplers for High-Power Applications
26. Analysis and Design of Plasmonic-Organic Hybrid Electro-Optic Modulators Based on Directional Couplers.
27. Organic Electro‐Optic Mach–Zehnder Modulators: From Physics‐Based to System‐Level Modeling.
28. Ab initio, nonlocal pseudopotential, and full-zone k · p computation of the electronic structure of wurtzite BeO
29. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics.
30. Reduced Dimensionality Multiphysics Model for Efficient VCSEL Optimization.
31. 14 - Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
32. Deriving k∙p parameters from full-Brillouin-zone descriptions: A finite-element envelope function model for quantum-confined wurtzite nanostructures.
33. Reducing inter-pixel crosstalk in HgCdTe detectors.
34. Probing Thermal Effects in VCSELs by Experiment-Driven Multiphysics Modeling.
35. VENUS: A Vertical-Cavity Surface-Emitting Laser Electro-Opto-Thermal NUmerical Simulator.
36. VENUS: a comprehensive electro-thermo-opto VCSEL simulator.
37. An accurate dual-expansion-point full-Brillouin-zone k·p model for wurtzite semiconductors.
38. Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations.
39. Alloy scattering in AlGaN and InGaN: A numerical study.
40. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN.
41. Modeling the effects of graded and abrupt mole fraction profiles in pBn and nBn HgCdTe barrier detectors.
42. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN.
43. Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys Al[sub x]Ga[sub 1-x]N, In[sub x]Ga[sub 1-x]N, and In[sub x]Al[sub 1-x]N.
44. Model for carrier capture time through phonon emission in InGaN/GaN quantum wells
45. Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes
46. FDTD simulation of compositionally graded HgCdTe photodetectors.
47. Monte Carlo calculation of the electron capture time in single quantum wells.
48. List of contributors
49. Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells
50. DETAILED DRIFT DIFFUSION MODEL FOR THE ANALYSIS AND DESIGN OF QUANTUM DOT SOLAR CELLS
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