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2 results on '"G.-T. Chen"'

1. Frequency spectrum of toroidal Alfv\'en mode in a neutron star with Ferraro's form of nonhomogeneous poloidal magnetic field

Author

I. V. Molodtsova, S. H. Lan, Hsiang-Kuang Chang, E. H. Wu, S. I. Bastrukov, and G.-T. Chen

Subjects
Physics, Toroid, Astrophysics::High Energy Astrophysical Phenomena, Rotational symmetry, Flux, Astronomy and Astrophysics, Astrophysics, Magnetic field, Computational physics, Vibration, Dipole, Neutron star, Variational method, Astrophysics - Solar and Stellar Astrophysics, Space and Planetary Science, Astrophysics::Solar and Stellar Astrophysics, Astrophysics - High Energy Astrophysical Phenomena
Abstract

Using the energy variational method of magneto-solid-mechanical theory of a perfectly conducting elastic medium threaded by magnetic field, the frequency spectrum of Lorentz-force-driven global torsional nodeless vibrations of a neutron star with Ferraro's form of axisymmetric poloidal nonhomogeneous internal and dipole-like external magnetic field is obtained and compared with that for this toroidal Alfv\'en mode in a neutron star with homogeneous internal and dipolar external magnetic field. The relevance of considered asteroseismic models to quasi-periodic oscillations of the X-ray flux during the ultra powerful outbursts of SGR 1806-20 and SGR 1900+14 is discussed., Comment: Accepted for publication in Astrophysics & Space Science

Published
2009

2. Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.

Author

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, Jihyun, Ren, F., Thaler, G. T., Frazier, R. M., Gila, B. P., Abernathy, C. R., Pearton, S. J., Buyanova, I. A., Rudko, G. Y., Chen, W. M., C.-C. Pan, W. M., G.-T. Chen, W. M., J.-I. Chyi, W. M., and Zavada, J. M.

Subjects
LUMINESCENCE, ELECTRICITY, LIGHT emitting diodes, MAGNETIC fields, POLARIZATION (Electricity)
Abstract

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer. [ABSTRACT FROM AUTHOR]

Published
2004
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