405 results on '"Foxon, C. T."'
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2. Direct band-gap crossover in epitaxial monolayer boron nitride
3. Growth and transport properties of p-type GaNBi alloys
4. Efficient near IR photoluminescence from gallium nitride layers doped with arsenic
5. The growth of high quality GaMnAs films by MBE
6. The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy
7. Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy
8. TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
9. Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells
10. Exafs Studies of Group III-Nitrides
11. Study of GaN thin layers subjected to high-temperature rapid thermal annealing
12. The current status of plasma assisted MBE growth of group III-nitrides
13. A Tem Study of the Microstructural Evolution of MBE-Grown GaN
14. A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN
15. Luminescence of excitons in slightly asymmetric double quantum wells
16. Book reviews
17. Giant growth of quantum oscillations in an inhomogeneous 2D electron system
18. The growth and properties of mixed group V nitrides
19. Single electron charging effects in semiconductor quantum dots
20. Quantized current in a quantum dot turnstile
21. Refractive indices of (AlAs)(GaAs) short-period superlattices
22. Far infrared measurements of bulk and surface phonons in GaAs/AlAs superlattices
23. Characterization of nitride thin films by electron backscatter diffraction
24. Nanorods as a precursor for high quality GaN layers
25. Anomalous influence of magnetic field on the indirect exciton in GaAs/AlGaAs double quantum wells
26. Growth and characterization of highly mismatched GaN1-xSbx alloys.
27. Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping
28. Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
29. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
30. Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range.
31. Doping of GaN1-xAsx with high As content.
32. Carrier localization and related photoluminescence in cubic AlGaN epilayers.
33. Highly mismatched crystalline and amorphous GaN1-xAsx alloys in the whole composition range.
34. Reliability assessment and degradation analysis of 1.3 μm GaInNAs lasers.
35. X-ray in-plane scattering investigation of GaN nanorods.
36. Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy.
37. Secondary magnetic phases in (Ga,Mn)As determined by x-ray magnetic circular dichroism.
38. Magnetic domain structure and magnetization reversal in (311)B Ga0.91Mn0.09As films.
39. Influence of internal fields on radiative and nonradiative processes in AlN/GaN superlattices.
40. Energy relaxation by hot electrons in n-GaN epilayers.
41. Determination of the local microstructure of epitaxial AlN by x-ray absorption.
42. Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates.
43. Modeling the spectral response of the quantum well solar cell.
44. Identification and ionization energies of the shallow donor metastable states in GaAs:Si.
45. Selection criteria for AlGaAs-GaAs heterostructures in view of their use as a quantum Hall resistance standard.
46. Photoluminescence decay time studies of type II GaAs/AlAs quantum-well structures.
47. Effect of undoped GaAs spacers on the characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures.
48. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)]
49. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]
50. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis.
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