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We present a combined resonant soft X-ray reflectivity and electric transport study of $$\hbox {LaAlO}_3$$ LaAlO 3 / $$\hbox {SrTiO}_3$$ SrTiO 3 field effect devices. The depth profiles with atomic layer resolution that are obtained from the resonant reflectivity reveal a pronounced temperature dependence of the two-dimensional electron liquid at the $$\hbox {LaAlO}_3$$ LaAlO 3 / $$\hbox {SrTiO}_3$$ SrTiO 3 interface. At room temperature the corresponding electrons are located close to the interface, extending down to 4 unit cells into the $$\hbox {SrTiO}_3$$ SrTiO 3 substrate. Upon cooling, however, these interface electrons assume a bimodal depth distribution: They spread out deeper into the $$\hbox {SrTiO}_3$$ SrTiO 3 and split into two distinct parts, namely one close to the interface with a thickness of about 4 unit cells and another centered around 9 unit cells from the interface. The results are consistent with theoretical predictions based on oxygen vacancies at the surface of the $$\hbox {LaAlO}_3$$ LaAlO 3 film and support the notion of a complex interplay between structural and electronic degrees of freedom.

We report on the magnetotransport properties of a spin-polarized two-dimensional electron system (2DES) formed in LaAlO3(LAO)/EuTiO3/SrTiO3 (STO) heterostructures. We show that, at low temperature, the 2DES magnetoconductance exhibits weak antilocalization corrections related to Rashba spin-orbit scattering, in analogy with the LAO/STO 2DES. However, the characteristic spin-orbit scattering field decreases substantially for carrier density higher than 1.9×1013cm-2. We attribute this behavior to the masking effect of ferromagnetism, which sets in at the same carrier density and at a temperature below 10 K. Our work shows that, while weak antilocalization corrections to the magnetoconductance are strongly reduced by the emergence of ferromagnetism, they persist in a large part of the phase diagram of a spin-polarized oxide 2DES.

We used x-ray absorption spectroscopy to study the orbital symmetry and the energy band splitting of (111) LaAlO${_3}$/SrTiO${_3}$ and LaAlO${_3}$/EuTiO${_3}$/SrTiO${_3}$ heterostructures, hosting a quasi two-dimensional electron system (q2DES), and of a Ti-terminated (111) SrTiO${_3}$ single crystal, also known to form a q2DES at its surface. We demonstrate that the bulk tetragonal Ti-3d D${_4}$${_h}$ crystal field is turned into trigonal D${_3}$${_d}$ crystal field in all cases. The symmetry adapted a${_1}$${_g}$ and e${^\pi_g}$ orbitals are non-degenerate in energy and their splitting, \Delta, is positive at the bare STO surface but negative in the heterostructures, where the a${_1}$${_g}$ orbital is lowest in energy. These results demonstrate that the interfacial symmetry breaking induced by epitaxial engineering of oxide interfaces has a dramatic effect on their electronic properties, and it can be used to manipulate the ground state of the q2DES.

Oxide growth with semiconductorlike accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This has yielded spectacular discoveries such as the conducting, magnetic, and even superconducting LaAlO 3 / SrTiO 3 interfaces separating two prototypical insulating perovskite materials. All these investigations, however, consider the static state at the interface, although studies on fast oxide interface dynamics would introduce a powerful degree of freedom to understanding the nature of the LaAlO 3 / SrTiO 3 interface state. Here, we show that the polarization state at the LaAlO 3 / SrTiO 3 interface can be optically enhanced or attenuated within picoseconds. Our observations are explained by a model based on charge propagation effects in the interfacial vicinity and transient polarization buildup at the interface.

Advances in growth technology of oxide materials allow single atomic layer control of heterostructures. In particular delta doping, a key materials' engineering tool in today's semiconductor technology, is now also available for oxides. Here we show that a fully electric-field-tunable spin-polarized and superconducting quasi-2D electron system (q2DES) can be artificially created by inserting a few unit cells of delta doping EuTiO3 at the interface between LaAlO3 and SrTiO3 oxides(1,2). Spin polarization emerges below the ferromagnetic transition temperature of the EuTiO3 layer (T-FM = 6-8 K) and is due to the exchange interaction between the magnetic moments of Eu-4f and of Ti-3d electrons. Moreover, in a large region of the phase diagram, superconductivity sets in from a ferromagnetic normal state. The occurrence of magnetic interactions, superconductivity and spin-orbit coupling in the same q2DES makes the LaAlO3/EuTiO3/SrTiO3 system an intriguing platform for the emergence of novel quantum phases in low-dimensional materials.

We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures., Comment: submitted to PRB, comments welcomed

The indirect effect of oxygen background gas on the La/Al ratio during the growth of LaAlO3 (LAO) films by pulsed laser deposition (PLD) is analyzed, in a pressure range between 10^-3 and 10^-1 mbar. We resort to two complementary investigation methods: Rutherford backscattering spectroscopy and spectrally resolved, time-gated imaging of the laser plume. The first technique allows us to analyze the stoichiometry of the deposited films, and the latter allows us to analyze the plume expansion phase of the PLD process by collecting chemically resolved two-dimensional images of the relevant atomic/molecular species. The comparison between the results obtained by the two techniques allows us to highlight the role of the plume-gas interaction in affecting cations stoichiometry. Our results indicate that, in the considered pressure range, the background oxygen pressure affects the cations stoichiometry of the LAO films, besides determining their oxygen content.

The quality of YBa2Cu3O7-delta blepitaxial grain boundary Josephson junctions has been improved and 'tunnel-like' characteristics are reproducibly obtained. The consequent low barrier transmission probabilities are apparently favourable to isolate intrinsic d-wave induced effects. Extrinsic and intrinsic d-wave effects are discussed within the framework of novel designs for pi-circultry and qubits.

The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas., 4 pages, 4 figures

Optical second harmonic generation (SHG) spectra of LaAlO${}_{3}$/SrTiO${}_{3}$, LaGaO${}_{3}$/SrTiO${}_{3}$, and NdGaO${}_{3}$/SrTiO${}_{3}$ interfaces with SrTiO${}_{3}$ substrates have been measured up to 4.2 eV as a function of film thickness and temperature. This spectral range is characterized by two-photon transitions from the valence to conduction bands of SrTiO${}_{3}$ which are classified with a model based on symmetry, selection rules, and atomic orbital overlaps. This model is further confirmed in spectral measurements as a function of film thickness, material overlayer, and temperature. SHG enhancement at low temperature indicates an increase of the interfacial polarity with decreasing temperature. This confirms the relation between SHG and the spatial translation of Ti ions which are more prone to move at lower temperatures because of the quantum-paraelectric nature of SrTiO${}_{3}$. We finally show that SHG spectroscopy captures structural details of the interfaces. In particular, we find evidence for proximity effects such as LaAlO${}_{3}$-induced distortions of the TiO${}_{6}$ octahedra or bond buckling. We also observe a correlation between SHG and the in-plane lattice mismatch between the SrTiO${}_{3}$ substrate and the LaAlO${}_{3}$, LaGaO${}_{3}$, and NdGaO${}_{3}$ overlayers.

We investigate pulsed laser ablation of LaAlO 3 and LaGaO 3 with a focus on the influence of oxygen background gas pressure on the plume expansion dynamics and deposition rate. The ablation plume is characterized by exploiting fast photography and time- and space-resolved optical emission spectroscopy. The variation of the deposition rate with the oxygen background pressure was obtained at 800 °C by reflection high-energy electron diffraction, and compared to that measured at room temperature by means of a quartz crystal microbalance. The experimental findings allow one to address the various stages of plume expansion as a function of the background oxygen pressure as well as the changes induced on the plume species kinetic energy and composition. On the base of our experimental results, the possible influence of various mechanisms, such as subplantation and oxygen vacancy formation, on the growth of oxides interfaces is addressed.

The polarization induced at the LaAlO3/SrTiO3 interface has been explored by optical second harmonic generation (SHG) spectroscopy. Our data reveal that an orbital reconstruction of the SrTiO3 surface occurs when three epitaxial monolayers of LaAlO3 are deposited on top of it. The reconstruction manifests as a spectral modification of a Ti4+(3d) state at the LaAlO3/SrTiO3 interface which is accompanied by a displacement of the Ti4+ ions in adjacent SrTiO3 monolayers in order to compensate for the polarization discontinuity induced at the interface. According to the SHG experiment, the carriers transferred to the interface are trapped because in spite of the orbital reconstruction, the interface remains insulating. The onset of conductivity with the formation of a two-dimensional electron liquid appears to be a subordinate effect related to a minority of carriers and occurs upon further increase of the LaAlO3 coverage.

International audience; We describe some general features in the transient behaviour of strongly correlated transition metal oxides, following ultrafast excitation by a femtosecond laser pulse. Our analysis is based on time-resolved reflectivity measurements on (V1-xCrx)2O3, a prototype Mott-Hubbard material, and the manganite compound (La0.67Sr0.33)MnO3, performed over a time window of several tenths of ps. We point out the contribution of coherent lattice oscillations-both optical and acoustic-to the overall signal, and show how they can depend on the crystallographic orientation of the material with respect to the laser beam wavevector and polarisation. In particular, an acoustic wave is always found to be present in our measurements, and we show that its oscillating behaviour is superposed to the average time evolution of the material, which can be instead related in different ways to its electronic properties and thermodynamic phase. All these effects are to be taken into account in any further analysis leading to the estimation of relevant physical parameters for correlated materials, and they appear to play a significant role not only for reflectivity techniques, but also in other kinds of ultrafast pump-probe experiments.

The pulsed laser deposition of SrTiO(3)/LaGaO(3) and SrTiO(3)/LaAlO(3) interfaces is analyzed with a focus on the kinetic energy of the ablated species. LaGaO(3) and LaAlO(3) plasma plumes were studied by fast photography and space-resolved optical emission spectroscopy. Reflection high energy electron diffraction was performed proving a layer-by-layer growth up to 10(-1) mbar oxygen pressure. The role of the energetic plasma plume on the two-dimensional growth and on the presence of interfacial defects at different oxygen growth pressures is discussed in connection with the conducting properties of the polar/nonpolar interfaces. (C) 2010 American Institute of Physics. [doi:10.1063/1.3529487]

The properties of thin films of complex oxides, such as La1−xDxMnO3− D=Ba, Ca, Sr, etc., produced by pulsed laser deposition depend critically on the experimental parameters in which laser ablation is carried out. Here, we report a comparative analysis of the pulsed laser ablation process of La0.7Ba0.3MnO3−, in oxygen background, in the ambient pressure range from 10−2 to 1 mbar, typically employed in pulsed laser deposition of manganites. The laser ablation plume was studied by using time-gated imaging and optical emission spectroscopy techniques. It was found that at a pressure of 10−2 mbar, the plume species arriving at the substrate are characterized by hyperthermal kinetic energy 10 eV, and high degree of excitation. On the contrary, at larger oxygen pressure 0.1–1 mbar, the velocity of plume species reaching the substrate, and their degree of excitation are much reduced by the confining effects of the background gas. These features explain why an appropriate choice of the experimental conditions in which the deposition process is carried out leads to better quality films, providing helpful indications to improve control over the growth process of both La1−xDxMnO3− and other perovskitic oxides.

The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer.

The blue-green photoluminescence emitted by pure and electron-doped strontium titanate under intense pulsed near-ultraviolet excitation is studied experimentally, as a function of excitation intensity and temperature. Both emission spectra and time-resolved decays of the emission are measured and analyzed in the framework of simple phenomenological models. We find an interesting blue-to-green transition occurring for increasing temperatures in pure samples, which is instead absent in doped materials. The luminescence yield and decay rate measured as a function of temperature can be modeled well as standard activated behaviors. The leading electron-hole recombination process taking place in the initial decay is established to be second-order, or bimolecular, in contrast to recent reports favoring a third-order interpretation as an Auger process. The temporal decay of the luminescence can be described well by a model based on two interacting populations of excitations, respectively identified with interacting defect-trapped (possibly forming excitons) and mobile charges. Finally, from the measured doping and sample dependence of the luminescence yield, we conclude that the radiative centers responsible for the luminescence are probably intrinsic structural defects other than bulk oxygen vacancies.

Following the recent surge of interest in n-doped strontium titanate as a possible blue light emitter, a time-resolved photoluminescence analysis was performed on nominally pure, Nb-doped and oxygen-deficient single-crystal SrTiO3 samples. The doping effects on both the electronic states involved in the transition and the decay mechanism are respectively analyzed by comparing the spectral and dynamic features and the yields of the emission. Our time-resolved analysis, besides shedding some light on the basic recombination mechanisms acting in these materials, sets the intrinsic bandwidth limit of the proposed blue light emitting optoelectronic devices made of Ti-based perovskites heterostructures in the gigahertz range.

(110) MgO thin films have been deposited by RF sputtering on (110) SrTiO3 and used as buffer layers for YBCO deposition. The MgO films show high morphological quality, as confirmed by X-ray specular reflectivity, and narrow (approximate to 1 degrees) X-ray diffraction peaks in the rocking curves measurements. These results are discussed in the framework of an ionic oxide growth model. XRD analyses performed on the bilayer YBCO/MgO (110) confirm the epitaxial growth of the films. with cool) YBCO//(110) MgO. XRD, AFM, SEM measurements are compared with data relative to bilayers deposited on (100) SrTiO3.

The colossal magnetoresistance (CMR) manganese oxides, have been the subject of intense studies. To elucidate the mechanisms at work in the ferromagnetic metallic state is essential for the comprehension of the M–I transition and the associated CMR effect. We present here comparison among resistivities behavior in Ca and Sr-doped manganite films (x = 0.3) grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. At low temperatures, a dominant T 2 term in the resistivity has generally been observed. Our analysis shows that for residual resistivity values larger than a critical one, there is a substantial deviation from the T 2-like behavior and that an unusual T 2.5 one is robust. This behavior supports the theoretical proposal of single magnon scattering in the presence of minority spin states localized by the disorder. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario.

Clear evidence about the influence of growth orientation on the stoichiometry of sputtered oxide thin films is reported and discussed. The growth of stoichiometric and of non-stoichiometric films is respectively obtained, from the same CaRuO3 target, on the surface of (110) and (100) perovskite substrates. Such phenomenon has been systematically investigated by deposition of pairs of samples in the same deposition run. Our data show that in samples deposited on (100) perovskites, Ca excess leads to the formation of a single Ca-rich phase with stoichiometry Ca1 + x Ru1-x O3, resulting in a dramatic effect on transport properties. Structural characterization based on X-ray diffraction proves that the orthorhombic structure is preserved in a wide stoichiometry range. The striking evidence that substrate orientation influences film stoichiometry is discussed in terms of growth kinetics and chemical properties of sputtered species.

We have investigated the properties of biepitaxial YBa2Cu3O72d grain boundary Josephson junctions, which appear to be characterized by low barrier transmission probabilities. Extrinsic and intrinsic d-wave effects are discussed within the framework of novel designs for p-circuitry and qubits. The absence of spontaneous magnetization and of the consequent additional noise, in a wide range of experimental conditions, seems to be encouraging for designs of ‘‘quiet’’ devices

An innovative biepitaxial technique for the fabrication of YBa2Cu3O72d artificial grain-boundary Josephson junctions is proposed. The structure was specifically designed to analyze the effects of anisotropy, both in the order parameter and in the crystallographic structure of YBa2Cu3O72d , on the Josephson current crossing the artificial grain boundary. Samples are grown on vicinal ~110! oriented SrTiO3 substrates, and a CeO2 film is employed as a seed layer. Crystallography and morphology of the samples are analyzed, thus allowing us to infer the nature of the grain boundary. Our measurements show that the obtained grain boundary, besides possessing a unique and complex structure, exhibits very peculiar Josephson and tunnel-like properties. The intrinsic flexibility of the biepitaxial technique is employed to modify the in-plane angle of the grain-boundary interface, allowing for the realization of symmetrical, asymmetrical, and intermediate configurations on the same substrate. Accordingly, junctions exhibiting different kinds of magnetic field dependence of the Josephson current are obtained on the same chip. Evidence of d-wave-induced effects and of a dielectric character of the barrier is obtained by the transport measurements.

We have designed an experiment that could allow to investigate, on the same sample, the interplay between the morphological anisotropy of high critical temperature superconductors and the effects related to the order parameter symmetry. To this aim we have employed c-axis tilt biepitaxial grain boundary YBa2Cu3O7-delta Josephson junctions and measured the junction properties for different junction interface orientations. The results give evidence of the possibility to tune normal state resistance and critical current density of a Josephson junction almost independently of each other. We interpret the results of this experiment as an indication that Cooper pairs and quasi-particles transport properties may be ruled by different mechanisms. Measurements apparently give evidence of the possibility to determine to some extent the presence of "pi-loops" and "0" loops along the same grain boundary line.

We have measured the angular dependence of the Josephson critical current density (JC) in c-axis tilt biepitaxial grain boundary YBa2Cu3O7 junctions. We observe for the first time intrinsic d-wave pairing symmetry effects manifested as an oscillatory dependence of JC on angle. This intrinsic effect is evident even though spontaneous currents, possibly induced by faceting or barrier impurities, are observed in the grain boundaries.

The local structure around Fe ions on ferromagnetic alloy Fe 62.5 Ni 7.5 Co 6 Zr 6 Cu 1 Nb 2 B 15 has been investigated by X-ray absorption spectroscopy as a function of annealing temperature. Well below the first crystallization temperature, an evident rearrangement of the Fe structural environment, foreboding the formation of α-Fe crystallites, was pointed out. This structural development is the determining factor to obtain the best magnetic and magnetoelastic softness.

We present femtosecond pump-probe spectroscopy studies of time-resolved optical reflectivity of all-oxide YBa2Cu3O7/La0.7Sr0.3MnO3 (YBCO/LSMO) superconductor/ferromagnet (S/F) bilayers consisting of a 100-nm-thick YBCO base layer and either 10 or 35 nm LSMO cap thickness. At temperatures far below the YBCO superconducting transition T-C, samples with a 10 nm F overlayer show a photoresponse that is similar to, but faster than, pure-YBCO, 100-nm-thick reference samples, while close to T-C and above (up to similar to 160 K) we observe a signature of both the electronic and spin response that cannot be interpreted as an incoherent sum of contributions from the two layers. The photoresponse of the S/F structures with the 35-nm LSMO layer always qualitatively follows that of the pure LSMO, but with a shorter relaxation time. In all cases, the YBCO/LSMO nonequilibrium dynamics can be modeled using a generalized multitemperature model, which is a superposition of the dynamics of the three-temperature models that are used to describe the superconductor and ferromagnet subsystems, respectively. The long term of the photoresponse signal of the S/F bilayer can be well fitted with the two characteristic relaxation times. DOI: 10.1103/PhysRevB.87.134514

The effects of the order parameter symmetry and the interfere grain boundary orientation on the transport properties of YBa2Cu3O7-x biepitaxial grain boundary junctions have been investigated. 45 degrees [100] tilt and twist junctions on SrTiO3 [110] and MgO [110] substrates by employing respectively MgO and SrTiO3 as seed layers have been fabricated. More complex junctions by using CeO as seed layers have also been fabricated and analyzed. The analysis of experimental data points towards a predominant d-wave symmetry of the superconductive order parameter.

(110) and (103) YBa2Cu3O7 films have been grown onto exact and vicinal (110) SrTiO3 substrates, and on vicinal (110) MgO substrates with a SrTiO3 buffer layer. The samples are carefully characterised by reciprocal space mapping with x-ray diffraction, in order to investigate the features of the typical double domain of (110) and (103) YBa2Cu3O7 structure. It is demonstrated that vicinal cut substrates allow to select one film/substrate epitaxial relation. The growth properties of these thin films deposited on vicinal surfaces are discussed.

A study of the 2D vs 3D growth in c-axis Nd 1+x Ba 2x Cu 3 O 7−δ films and a study of the crossover between a-axis to c-axis growth in the Re 1+x Ba 2−x Cu 3 O 7−δ (RBCO) family is reported. We found that c-axis stoichiometric Nd 1 Ba 2 Cu 3 O 7 films exhibit a 3D layered island-growth, possibly originated by screw and half loop dislocations. On the contrary, a continuous 2D growth is found in off-stoichiometry films, characterized by Nd excess. The amount of a-axis in Nd 1+x Ba 2−x Cu 3 O 7 films deposited at different temperatures has been carefully determined by XRD. The experimental results are interpreted in the framework of a theoretical model of the nucleation of RBCO films. The model provides a quantitative description and a satisfactory fit of experimental data from our experiment and from the current litterature.

A method to correlate microstructure from cross-section transmission electron microscopy ~TEM! investigations and transport properties of a single well characterized high-Tc artificial grain boundary junction is reported. A YBa2Cu3O72d 45° twist junction exhibiting the typical phenomenology of high-Tc Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in Ic and IcRN values and the presence of different transport regimes in nominally identical junctions.

Segregation and competition of Y-based impurities in Y-rich biepitaxial YBCO samples is investigated. The analysis of distribution and microstructure of the precipitates is performed by high resolution electron microscopy HREM.. Y2O3 precipitates are found in 103. YBCO films grown on 110. SrTiO3 STO. substrates. On the same biepitaxial samples, Y2BaCuO5 Y211. precipitates are found in 001. YBCO films deposited on an intermediate 110. MgO seed layer. Agglomeration of Y211 precipitates is observed near the edge in the MgO seed layer. The experimental data are discussed in the context of phase competition, nucleation, epitaxy and surface migration in the Y–Ba–Cu–O system. It is deduced that the change of supersaturation and surface energy, also governed by the favorable epitaxy of the secondary phase with the substrate or the YBCO matrix, plays a major role in determining the segregation of either Y211 or Y2O3 precipitates

YBa(2)Cu(3)O(7-delta) (YBCO) grain boundaries characterized by a misalignment of the c-axes (45 degrees c-axis tilt or 45 degrees c-axis twist) have been obtained by employing a recently implemented biepitaxial technique. Junctions based on these grain boundaries exhibit good Josephson properties useful for applications. High values of the I(C)R(N) product and a Fraunhofer-like dependence of the critical current on the magnetic field, differently from traditional biepitaxial junctions, have been obtained. The correlation between transport properties and microstructure has been investigated by Transmission Electron Microscopy (TEM), which was also performed on previously measured junctions. The presence of atomically clean basal plane (BP) faced tilt boundaries, among other types of interfaces, has been shown. The possibility of selecting these kinds of boundaries by controlling film growth, and their possible advantages in terms of reproducibility and uniformity of the junction properties an discussed. The possibility of employing these junctions to explore the symmetry of the order parameter is also discussed.

YBa(2)Cu(3)O(7-delta) (YBCO) grain boundaries characterized by a misalignment of the c-axes (45 degrees c-axis tilt or 45 degrees c-axis twist) have been obtained by employing a recently implemented biepitaxial technique. Junctions based on these grain boundaries exhibit good Josephson properties useful for applications. High values of the I(C)R(N) product and a Fraunhofer-like dependence of the critical current on the magnetic field, differently from traditional biepitaxial junctions, have been obtained. The correlation between transport properties and microstructure has been investigated by Transmission Electron Microscopy (TEM), which was also performed on previously measured junctions. The presence of atomically clean basal plane (BP) faced tilt boundaries, among other types of interfaces, has been shown. The possibility of selecting these kinds of boundaries by controlling film growth, and their possible advantages in terms of reproducibility and uniformity of the junction properties an discussed. The possibility of employing these junctions to explore the symmetry of the order parameter is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

YBa(2)Cu(3)O(7-x)., junctions and de SQUIDs have been realized by employing 45 degrees axis tilt grain boundaries through a fabrication procedure based on the biepitaxial technique, YBa(2)Cu(3)O(7-x)., grows mainly oriented (103) on SrTiO(3) and (001) on the MgO seed layer, A wide characterization of the tilt junctions and SQUID properties has been carried out. High values of the I(C)R(N) quality factor and of the magnetic flux-to-voltage transfer parameter have been obtained. The observed phenomenology confirms differences from the one typical of 45 degrees c-asis tilt grain boundary junctions and gives important information on the nature of the current steps appearing at finite voltages in the current-voltage characteristics. These devices could also have some impact on esperiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. A maximum speed of Josephson vortices as calculated from the voltage step values, of the order of 2 10(6) m/sec is obtained, which encourages high frequency applications.

YBa2Cu3O7-x artificial grain boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c-axes (45 degrees a-axis tilt or 45 degrees a-axis twist). These types of grain boundaries are still mostly unexplored. We carried out a complete characterization of their transport properties and microstructure. Junctions and de SQUIDs associated with these grain boundaries exhibit an excellent Josephson phenomenology and high values of the ICRN product and of the magnetic flux-to-voltage transfer parameter respectively. Remarkable differences in the transport parameters of tilt and twist junctions have been observed, which can be of interest for several applications. A maximum speed of Josephson vortices as calculated from the voltage step values of the order of 2 x 10(6) m s(-1) is obtained. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries.

(103) YBCO films have been grown onto exact and vicinal (110) STO substrates, and on vicinal (110) MgO substrates with a STO buffer layer. The samples are carefully characterised by reciprocal space mapping (RSM) with X-ray diffraction, in order to investigate the features of the typical double domain of (103) YBCO structure. It is demonstrated that the STO buffer grown on vicinal MgO is (110) oriented, and that it preserves the vicinal cut of the substrate. YBCO films deposited on such STO buffer layers present a single (103) domain.