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34 results on '"Duesberg, G. S."'

1. Laser-induced graphene on cross-linked sodium alginate.

Author

Vićentić, T, Greco, I, Iorio, C S, Mišković, V, Bajuk-Bogdanović, D, Pašti, I A, Radulović, K, Klenk, S, Stimpel-Lindner, T, Duesberg, G S, and Spasenović, M

Subjects
GRAPHENE, X-ray photoelectron spectroscopy, PHOTOELECTRON spectroscopy, SODIUM alginate, TRANSMISSION electron microscopy, INFRARED spectroscopy, RAMAN spectroscopy, ALGINATES
Abstract

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a comprehensive understanding of the physicochemical characteristics of the material. Raman spectroscopy, scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy techniques confirm the successful generation of oxidized graphene on the surface of cross-linked sodium alginate. The influence of laser parameters and the amount of crosslinker incorporated into the alginate substrate is explored, revealing that lower laser speed, higher resolution, and increased CaCl2 content leads to LIG with lower electrical resistance. These findings could have significant implications for the fabrication of LIG on alginate with tailored conductive properties, but they could also play a guiding role for LIG formation on other biocompatible substrates. [ABSTRACT FROM AUTHOR]

Published
2024
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2. Correction: G. Papari et al. Terahertz spectroscopy of amorphous wse2 and mose2 thin films. Materials (2018), 11(9), 1613[Materials 2020, 13, 1017] DOI: 10.3390/ma13041017

Author

Papari G. P., Koral C., Hallam T., Duesberg G. S., Andreone A., Papari, G. P., Koral, C., Hallam, T., Duesberg, G. S., and Andreone, A.

Abstract

The exponential factor in Equation (1) of the paper published in Materials [1] reports a misprint and the correct expression of the transmission function is These changes have no material impact on the conclusions of the paper. The authors would like to apologize for any inconvenience caused to the readers by these changes. Conflicts of Interest: The authors declare no conflict of interest.

Published
2020

4. An investigation of the electrical properties of pyrolytic carbon in reduced dimensions: Vias and wires.

Author

Graham, A. P., Schindler, G., Duesberg, G. S., Lutz, T., and Weber, W.

Subjects
WIRE, CHEMICAL vapor deposition, LIGHT elements, ACETYLENE, PHYSICS
Abstract

Nanoscale vertical interconnect structures (vias) made from chemical vapor deposited carbon have been investigated. The vias and wires were created by pyrolytic carbon deposition from acetylene at 950 °C followed by electron beam lithography and reactive ion etching. The carbon layer exhibits a resistivity of 4.5 mΩ cm in vias and wires which decreases to 1.5 mΩ cm after annealing at 1000 °C. The resistivity does not show any size effect in the vias, as it is independent of the diameter from 85 nm down to 24 nm. The maximum current density in long carbon wires was found to be 6×106 A cm-2, increasing to 3.5×108 A cm-2 for short vias. [ABSTRACT FROM AUTHOR]

Published
2010
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5. Robust fabrication of suspended structures from CVD graphene (Oral Plenary)

Author

Aydin, O. Isil, T., Hallam, J.L., Thomassin, Piot, B.A., Duesberg, G. S., Mouis, Mireille, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS), Renatech, ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
stomatognathic diseases, health care facilities, manpower, and services, education, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, health care economics and organizations
Abstract

Oral plenary; International audience

Published
2015

6. A study of the residual strain in suspended CVD graphene devices made by a robust fabrication route

Author

Aydin, O.I., Hallam, T., Thomassin, J.L., Duesberg, G. S., Mouis, Mireille, Ducroquet, Frédérique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), M. Mouis, O. Thomas, E. Zschech, C. Paitel, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

session: 2D Materials; International audience

Published
2015

7. Robust fabrication of suspended graphene structures

Author

Aydin, O. Isil, Cresti, Alessandro, T., Hallam, J.L., Thomassin, Mouis, Mireille, Duesberg, G. S., Cresti, Alessandro, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), CRANN, Trinity College Dublin, Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Fondation Nanosciences, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMethodologies_GENERAL, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

poster; National audience

Published
2014

10. Towards the integration of carbon nanotubes in microelectronics.

Author

Graham, A. P., Duesberg, G. S., Kreupl, F., Seidel, R., Liebau, M., Unger, E., and Hönlein, W.

Subjects
*NANOTUBES, *CARBON, *MICROELECTRONICS, *INTEGRATED circuit interconnections
Abstract

The outstanding properties of carbon nanotubes (CNTs) makes them particularly interesting for microelectronic applications such as interconnects and devices. The parallel integration of CNTs using compatible processes is critical for their future application and implies the simultaneous processing of millions of CNTs. In this paper, we present concepts for CNT-based interconnects for large-scale integration. In order to realize this we demonstrate the creation of vertical interconnects (vias) consisting of multi-walled nanotubes and show, for the first time, the growth of single, isolated CNTs at lithographically defined locations. © 2003 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2003
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11. CARBON NANOTUBES IN MICROELECTRONIC APPLICATIONS.

Author

KREUPL, F., DUESBERG, G. S., GRAHAM, A. P., LIEBAU, M., UNGER, E., SEIDEL, R., PAMLER, W., and HÖNLEIN, W.

Subjects
CARBON nanotubes, MICROELECTRONICS, ELECTRIC properties of metals, LIGHT emitting diodes, NANOFABRICATION
Published
2003

12. Controlled CVD-growth of multiwalled CNTs.

Author

Duesberg, G. S., Kreupl, F., Graham, A., Liebau, M., Unger, E., Gabric, Z., and Hönlein, W.

Subjects
*NANOTUBES, *CHEMICAL vapor deposition
Abstract

Many applications of carbon nanotubes (CNTs) require a material with defined properties, however most synthesis routes yield CNTs of varying purity, structure, diameter, and length. Chemical vapor deposition (CVD) allows a good control over the CNTs synthesis and leads to promising results, however the effect of many parameters remains unclear. In order to improve this situation a comprehensive study was carried out under highly controlled conditions. The used CVD reactor was capable to perform deposition processes with temperature deviations smaller than 1°K. The substrates were patterned Fe films with a thickness below 10 nm on silicon/siliconoxide. The effects of the conditioning of the catalyst prior to growth, growth temperature, and growth time were investigated. The synthesis in a hydrogen/acetylene atmosphere yielded pure multi-walled CNTs with diameters between 10-20 nm. The length of the CNTs was accurately controlled by the growth time. The density of the CNTs can be varied by the preconditioning of the catalyst. The controlled synthesis allows an integration of CNTs into technologically relevant structures for microelectronics and elucidates the mechanism of the catalysed CNT growth. [ABSTRACT FROM AUTHOR]

Published
2002

13. Towards Carbon Nanotube In-plane Transistors.

Author

Chiu, P. W., Duesberg, G. S., Dettlaff-Weglikowska, U., and Roth, S.

Subjects
*NANOTUBES, *TRANSISTORS
Abstract

Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. A T-shape heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. Electronic devices were prepared by adsorption of functionalized nanotube junctions on Si/SiO[SUB2] substrate followed by standard e-beam lithography. The charge transport through the junction was fund to be strongly modified by the in-plane nanotube mechanically, leading to pronounced metal-insulator transition. [ABSTRACT FROM AUTHOR]

Published
2002

14. Raman characterization of individual single wall nanotubes.

Author

Duesberg, G. S., Loa, I., Byrne, H. J., Syassen, K., Blau, W., and Roth, S.

Subjects
*NANOTUBES, *SCANNING force microscopy, *RAMAN effect
Abstract

Individual single-wall carbon nanotubes (SWNTs) or thin ropes of SWNTs were characterised in position and size by Scanning Force Microscopy (SFM). Raman spectra of these objects could be obtained and were found to be comprised of well-resolved peaks. The orientation-dependent measurements reveal maximum intensity of all Raman modes when the nanotubes are aligned parallel to the polarisation of the incident laser light. This clearly deviates from the selection rules predicted by theoretical studies and may be explained by depolarisation effects caused by the anisotropic geometry of the nanotubes and by electronic resonance effects. [ABSTRACT FROM AUTHOR]

Published
2001

15. Graphene field emission devices.

Author

Kumar, S., Duesberg, G. S., Pratap, R., and Raghavan, S.

Subjects
*GRAPHENE, *FIELD emission, *CURRENT density (Electromagnetism), *ELECTRIC potential, *CARBON nanotubes
Abstract

Graphene field emission devices are fabricated using a scalable process. The field enhancement factors, determined from the Fowler-Nordheim plots, are within few hundreds and match the theo-retical predictions. The devices show high emission current density of ∼10nA µm-1 at modest voltages of tens of volts. The emission is stable with time and repeatable over long term, whereas the noise in the emission current is comparable to that from individual carbon nanotubes emitting under similar conditions. We demonstrate a power law dependence of emission current on pressure which can be utilized for sensing. The excellent characteristics and relative ease of making the devices promise their great potential for sensing and electronic applications. [ABSTRACT FROM AUTHOR]

Published
2014
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16. Helium ion microscope generated nitrogen-vacancy centres in type Ib diamond.

Author

McCloskey, D., Fox, D., O'Hara, N., Usov, V., Scanlan, D., McEvoy, N., Duesberg, G. S., Cross, G. L. W., Zhang, H. Z., and Donegan, J. F.

Subjects
FIELD ion microscopes, HELIUM ions, DIAMONDS, ANNEALING of metals, FLUORESCENCE, AMORPHIZATION
Abstract

We report on position and density control of nitrogen-vacancy (NV) centres created in type Ib diamond using localised exposure from a helium ion microscope and subsequent annealing. Spatial control to <380 nm has been achieved. We show that the fluorescence lifetime of the created centres decreases with increasing ion dose. Furthermore, we show that for doses >1×1017 ion/cm2, significant damage of the diamond lattice occurs resulting in fluorescence quenching and amorphization. This places an upper limit on the density of NV centres that can be created using this method. [ABSTRACT FROM AUTHOR]

Published
2014
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17. Helium ion microscopy of graphene: beam damage, image quality and edge contrast.

Author

Fox, D., Zhou, Y. B., O'Neill, A., Kumar, S., Wang, J. J., Coleman, J. N., Duesberg, G. S., Donegan, J. F., and Zhang, H. Z.

Subjects
OPTICAL properties of graphene, HELIUM ions, RAMAN spectroscopy, IMAGE quality in imaging systems, MAGNIFICATION (Optics), TRANSMISSION electron microscopes, SCANNING electron microscopes
Abstract

A study to analyse beam damage, image quality and edge contrast in the helium ion microscope (HIM) has been undertaken. The sample investigated was graphene. Raman spectroscopy was used to quantify the disorder that can be introduced into the graphene as a function of helium ion dose. The effects of the dose on both freestanding and supported graphene were compared. These doses were then correlated directly to image quality by imaging graphene flakes at high magnification. It was found that a high magnification image with a good signal to noise ratio will introduce very significant sample damage. A safe imaging dose of the order of 1013 He+ cm-2 was established, with both graphene samples becoming highly defective at doses over 5 × 1014 He+ cm-2. The edge contrast of a freestanding graphene flake imaged in the HIM was then compared with the contrast of the same flake observed in a scanning electron microscope and a transmission electron microscope. Very strong edge sensitivity was observed in the HIM. This enhanced edge sensitivity over the other techniques investigated makes the HIM a powerful nanoscale dimensional metrology tool, with the capability of both fabricating and imaging features with sub-nanometre resolution. [ABSTRACT FROM AUTHOR]

Published
2013
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21. Nanoelectronics Based on Carbon Nanotubes: Technological Challenges and Recent Developments.

Author

Liebau, M., Graham, A. P., Duesberg, G. S., Unger, E., Seidel, R., and Kreupl, F.

Subjects
MICROELECTRONICS, SEMICONDUCTOR industry, NANOTUBES, ELECTRONIC industries, INTEGRATED circuits industry, CARBON
Abstract

The semiconductor industry is expecting extraordinary technological challenges, so the readiness to integrate exotic materials with superior properties into microelectronic chips is increasing and new concepts are attracting more interest. This paper reviews recent research developments aimed at the design of carbon nanotube (CNT)-based vertical interconnects. We introduce our concept for the integration of CNTs into microelectronic chips that is based on a combination of conventional technology, advanced processing methods (lithography and deposition), and self-aligned processes. [ABSTRACT FROM AUTHOR]

Published
2005
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24. Interconnection of carbon nanotubes by chemical functionalization.

Author

Chiu, P. W., Duesberg, G. S., Dettlaff-Weglikowska, U., and Roth, S.

Subjects
*NANOTUBES, *CARBON, *RAMAN spectroscopy
Abstract

Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. An end-to-side or end-to-end heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. The chemically modified nanotube mats were characterized by Raman spectroscopy. The peak shift in the tangential vibration mode reveals that the attached chemical functional groups can behave as either an electron donor or an acceptor, and facilitate charge transfer with the nanotube host. The charge transfer is also verified by transport measurements on individual end-to-side intermolecular junctions, which show diode-like behavior. The charge transfer can be attributed to amide functionality at the junction. [ABSTRACT FROM AUTHOR]

Published
2002
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28. Production and processing of graphene and related materials

Author

Backes, Abdelkader, A.M., Alonso, Andrieux-Ledier, Arenal, Azpeitia, Balakrishnan, Banszerus, Barjon, Bartali, Bellani, Berger, Ortega, M.M.B., Bernard, Beton, P.H., Beyer, Bianco, B?ggild, Bonaccorso, Barin, G.B., Botas, Bueno, R.A., Carriazo, Castellanos-Gomez, Christian, Ciesielski, Ciuk, Cole, M.T., Coleman, Coletti, Crema, Cun, Dasler, De Fazio, D?ez, Drieschner, Duesberg, G.S., Fasel, Feng, Fina, Forti, Galiotis, Garberoglio, Garc?a, J.M., Garrido, J.A., Gibertini, G?lzh?user, G?mez, Greber, Hauke, Hemmi, Hernandez-Rodriguez, Hirsch, Hodge, S.A., Huttel, Jepsen, P.U., Jimenez, Kaiser, Kaplas, Kim, Kis, Papagelis, Kostarelos, Krajewska, Lee, Lipsanen, Liscio, Lohe, M.R., Loiseau, Lombardi, L?pez, M.F., Martin, Mart?n, Mart?nez, Martin-Gago, J.I., Marzari, Mayoral, McManus, Melucci, M?ndez, Merino, Meyer, A.P., Miniussi, Miseikis, Mishra, Morandi, Munuera, Mu?oz, Nolan, Ortolani, Ott, A.K., Palacio, Palermo, Parthenios, Pasternak, Patane, Prato, Prevost, Prudkovskiy, Pugno, Rojo, Rossi, Ruffieux, Samor?, Schu?, Setijadi, Seyller, Speranza, Stampfer, Stenger, Strupinski, Svirko, Taioli, Teo, K.B.K., Testi, Tomarchio, Tortello, Treossi, Turchanin, Vazquez, Villaro, Whelan, P.R., Xia, Yakimova, Yang, Yazdi, G.R., Yim, Yoon, Zhang, Zhuang, Colombo, Ferrari, A.C., Garcia-Hernandez, European Commission, García-Hernández, M., Apollo - University of Cambridge Repository, Heidelberg University, University of Cambridge, Universidad Autónoma de Madrid, Université Paris-Saclay, Aragonese Foundation for Research & Development, CSIC, University of Nottingham, RWTH Aachen University, Université de Versailles Saint-Quentin-en-Yvelines, Bruno Kessler Foundation, Italian Institute of Technology, Université Grenoble Alpes, Technische Universität Dresden, Polytechnic University of Turin, University of Zurich, Bielefeld University, Université de Strasbourg, Technical University of Denmark, Swiss Federal Laboratories for Materials Science and Technology, CIC energigune, National Research Council of Italy, Institute of Electronic Materials Technology, University of Bath, Trinity College Dublin, Friedrich-Alexander University Erlangen-Nürnberg, Technical University of Munich, Universität der Bundeswehr München, University of Patras, CSIC - Institute of Micro and Nanotechnology, Catalan Institute of Nanoscience and Nanotechnology, Swiss Federal Institute of Technology Lausanne, Avanzare S.L. Technological Innovation, Ulm University, University of Eastern Finland, Institute of Chemical Engineering and High Temperature Chemical Processes, University of Manchester, Polish Academy of Sciences, Department of Electronics and Nanoengineering, University of Castilla-La Mancha, University of Zaragoza, Groupo Antolin I+D+I, Warsaw University of Technology, Ikerbasque Basque Foundation for Science, BEC-INFM, Chemnitz University of Technology, Charles University, Buckingway Business Park, Friedrich Schiller University Jena, Interquimica, Linköping University, University of Texas at Dallas, Aalto-yliopisto, Aalto University, Backes, C., Abdelkader, A. M., Alonso, C., Andrieux-Ledier, A., Arenal, R., Azpeitia, J., Balakrishnan, N., Banszerus, L., Barjon, J., Bartali, R., Bellani, S., Berger, C., Berger, R., Ortega, M. M. B., Bernard, C., Beton, P. H., Beyer, A., Bianco, A., Boggild, P., Bonaccorso, F., Barin, G. B., Botas, C., Bueno, R. A., Carriazo, D., Castellanos-Gomez, A., Christian, M., Ciesielski, A., Ciuk, T., Cole, M. T., Coleman, J., Coletti, C., Crema, L., Cun, H., Dasler, D., De Fazio, D., Diez, N., Drieschner, S., Duesberg, G. S., Fasel, R., Feng, X., Fina, A., Forti, S., Galiotis, C., Garberoglio, G., Garcia, J. M., Garrido, J. A., Gibertini, M., Golzhauser, A., Gomez, J., Greber, T., Hauke, F., Hemmi, A., Hernandez-Rodriguez, I., Hirsch, A., Hodge, S. A., Huttel, Y., Jepsen, P. U., Jimenez, I., Kaiser, U., Kaplas, T., Kim, H., Kis, A., Papagelis, K., Kostarelos, K., Krajewska, A., Lee, K., Li, C., Lipsanen, H., Liscio, A., Lohe, M. R., Loiseau, A., Lombardi, L., Lopez, M. F., Martin, O., Martin, C., Martinez, L., Martin-Gago, J. A., Martinez, J. I., Marzari, N., Mayoral, A., Mcmanus, J., Melucci, M., Mendez, J., Merino, C., Merino, P., Meyer, A. P., Miniussi, E., Miseikis, V., Mishra, N., Morandi, V., Munuera, C., Munoz, R., Nolan, H., Ortolani, L., Ott, A. K., Palacio, I., Palermo, V., Parthenios, J., Pasternak, I., Patane, A., Prato, M., Prevost, H., Prudkovskiy, V., Pugno, N., Rojo, T., Rossi, A., Ruffieux, P., Samori, P., Schue, L., Setijadi, E., Seyller, T., Speranza, G., Stampfer, C., Stenger, I., Strupinski, W., Svirko, Y., Taioli, S., Teo, K. B. K., Testi, M., Tomarchio, F., Tortello, M., Treossi, E., Turchanin, A., Vazquez, E., Villaro, E., Whelan, P. R., Xia, Z., Yakimova, R., Yang, S., Yazdi, G. R., Yim, C., Yoon, D., Zhang, X., Zhuang, X., Colombo, L., Ferrari, A. C., Garcia-Hernandez, M., Physikalisch-Chemisches Institut [Heidelberg] (PCI), Universität Heidelberg [Heidelberg] = Heidelberg University, Centre for Research on Adaptive Nanostructures and Nanodevices and Advanced Materials and BioEngineering Research (CRANN-AMBER), Cambridge Graphene Centre (Cambridge, UK), DPHY, ONERA, Université Paris Saclay (COmUE) [Châtillon], ONERA-Université Paris Saclay (COmUE), Instituto de Nanociencia de Aragón [Saragoza, España] (INA), University of Zaragoza - Universidad de Zaragoza [Zaragoza], Instituto de Ciencia de Materiales de Aragón [Saragoza, España] (ICMA-CSIC), Materials Science Factory - ICMM [Madrid], Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), School of Physics and Astronomy [Nottingham], University of Nottingham, UK (UON), Rheinisch-Westfälische Technische Hochschule Aachen University (RWTH), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Fondazione Bruno Kessler [Trento, Italy] (FBK), IIT Graphene Labs, Istituto Italiano di Tecnologia (IIT), Circuits électroniques quantiques Alpes (NEEL - QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Georgia Institute of Technology [Atlanta], Technische Universität Dresden = Dresden University of Technology (TU Dresden), Politecnico di Torino = Polytechnic of Turin (Polito), Universität Zürich [Zürich] = University of Zurich (UZH), Universität Bielefeld = Bielefeld University, Immunopathologie et chimie thérapeutique (ICT), Institut de biologie moléculaire et cellulaire (IBMC), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Danmarks Tekniske Universitet = Technical University of Denmark (DTU), BeDimensional Spa, Swiss Federal Laboratories for Materials Science and Technology [Thun] (EMPA), CIC ENERGIGUNE - Parque Tecnol Alava, Ikerbasque - Basque Foundation for Science, Institute for Microelectronics and Microsystems (IMM ), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Institut de Science et d'ingénierie supramoléculaires (ISIS), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Instytut Technologii Materiałów Elektronicznych, Department of Electronics and Electrical Engineering [Bath], University of Bath [Bath], Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Walter Schottky Institut Technische Universität München, Universität der Bundeswehr München [Neubiberg], Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] (EMPA), Center for Advancing Electronics in Dresden (CFAED), European Centre for Theoretical Studies in Nuclear Physics and Related Areas (ECT*-FBK), IMN-Instituto de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid, Spain, Universidad de Alicante, Institut de théorie des phénomènes physiques (EPFL), Ecole Polytechnique Fédérale de Lausanne (EPFL), Avanzare Innovacion Tecnologica S.L., Center for Nanostructured Graphene, Universität Ulm - Ulm University [Ulm, Allemagne], Electrical Engineering Institute - EPFL, Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), Institute of Chemical Engineering Sciences - Hellas [Crete] (ICE-HT), Foundation for Research and Technology - Hellas (FORTH), Aristotle University of Thessaloniki, University of Manchester [Manchester], Polish Academy of Sciences (PAN), LEM, UMR 104, CNRS-ONERA, Université Paris-Saclay (Laboratoire d'étude des microstructures), ONERA-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Universidad de Sevilla / University of Sevilla, Laboratoire de Physique de l'ENS Lyon (Phys-ENS), École normale supérieure de Lyon (ENS de Lyon)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Department of Materials Science and Engineering (DMSE), Massachusetts Institute of Technology (MIT), Institute of Organic Synthesis and Photoreactivity (ISOF), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC), Instituto de Física Fundamental [Madrid] (IFF), Istituto per la Microelettronica e i Microsistemi [Bologna] (IMM), University of Exeter, Chalmers University of Technology [Göteborg], Warsaw University of Technology [Warsaw], Laboratoire national des champs magnétiques intenses - Toulouse (LNCMI-T), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), University of Trento [Trento], School of Engineering and Materials Science [London] (SEMS), Queen Mary University of London (QMUL), Departamento de Química Inorgánica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco / Euskal Herriko Unibertsitatea [Espagne] (UPV/EHU), Charles University [Prague] (CU), Friedrich-Schiller-Universität = Friedrich Schiller University Jena [Jena, Germany], Universidad de Castilla-La Mancha = University of Castilla-La Mancha (UCLM), University of Calgary, Department of Physics, Chemistry and Biology, Linköping University, University of Linköping [Sweden], University of Texas at Dallas [Richardson] (UT Dallas), Universität Heidelberg [Heidelberg], DPHY, ONERA, Université Paris Saclay [Châtillon], ONERA-Université Paris-Saclay, Consejo Superior de Investigaciones Científicas [Spain] (CSIC)-Consejo Superior de Investigaciones Científicas [Spain] (CSIC), QuantECA - Circuits électroniques quantiques Alpes, Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Technische Universität Dresden (TUD), Technical University of Denmark [Lyngby] (DTU), Consiglio Nazionale delle Ricerche (CNR), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Politecnico di Torino [Torino] (Polito), University of Patras [Patras], Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology in Zürich [Zürich] (ETH Zürich), LEM, UMR 104 CNRS-ONERA, Université Paris Saclay [Châtillon], Universidad de Sevilla, École normale supérieure - Lyon (ENS Lyon)-Université Claude Bernard Lyon 1 (UCBL), Consejo Superior de Investigaciones Científicas [Spain] (CSIC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Charles University [Prague], Universidad de Castilla-La Mancha (UCLM), Autonomous University of Madrid, Faculty of Sciences, Department of Ecology, 28049 Madrid, Spain, Agencia Aragonesa por la Investigacion y el Desarollo (ARAID), Fundacion ARAID-Gobierno de Aragón [Zaragoza, Espagne], Laboratorio de Microscopias Avanzadas, JARA-FIT, Rheinisch-Westfälische Technische Hochschule Aachen (RWTH), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Dipartimento di Scienza Applicata e Tecnologia DISAT, University of Zürich, University of Zürich [Zürich] (UZH), Physics of Supramolecular Systems (Bielefeld University), Immunologie et chimie thérapeutiques (ICT), Cancéropôle du Grand Est-Centre National de la Recherche Scientifique (CNRS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Center for Nanotechnology Innovation, @NEST, Chair of Organic Chemistry II and Joint Institute of Advanced Materials and Processes, Department of Chemistry and Biochemistry, University of Bern, University of Bern, Instituto de Micro y Nanotecnología, Univ Geneva, DQMP, 24 Quai Ernest, CH-1211 Geneva 4, Switzerland, Universität Ulm - Ulm University, Institute of Photonics (Institute of Photonics), University of Shanghai [Shanghai], Istituto per la Sintesi Organica e la Fotoreattività - ISOF (Bologne, Italie), Consiglio Nazionale delle Ricerche [Bologna] (CNR), ACM Advanced Carbon Materials (Grupo Antolin Ingenieria), INRES-Chemical Signalling, Rheinische Friedrich-Wilhelms-Universität Bonn, Carbon Bionanotechnology Laboratory (CICbiomaGUNE), Dipartimento di Scienze Farmaceutiche & INSTM UdR Trieste, Université Trieste, Department of Structural Engineering and Geotechnics, Edoardo Amaldi Foundation, Lehrstuhl für Technische Physik, Technisches Universität Chemnitz, Institute of Physical Chemistry (Firedrich Schiller University Jena), Linköping University (LIU), Department of Materials Science and Engineering (University of Texas), UAM. Departamento de Química Física Aplicada, Circuits électroniques quantiques Alpes (QuantECA), Université de Strasbourg (UNISTRA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), École normale supérieure - Lyon (ENS Lyon)-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, García-Hernández, M. [0000-0002-5987-0647], European Union (EU), and Horizon 2020

Subjects
Inks of layered materials, Growth of layered material, Materialkemi, 02 engineering and technology, Chemical vapor deposition, Q1, 01 natural sciences, materials, law.invention, Characterization of layered materials, Functionalization of layered materials, Growth of layered materials, Processing of layered materials, Synthesis of graphene and related materials, law, 540 Chemistry, functionalization of layered, Materials Chemistry, General Materials Science, Graphite, QA, QC, growth of, SYNTHESE DU GRAPHENE ET DES MATERIAUX ASSOCIES, Settore FIS/01 - Fisica Sperimentale, Processing of layered material, Química, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Exfoliation joint, ddc, Characterization of layered material, layered materials, Nanoröhre, Mechanics of Materials, processing of layered materials, inks of layered materials, characterization of layered materials, functionalization of layered materials, synthesis of graphene and related materials, growth of layered materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], PROCÉDURE DES MATERIAUX EN COUCHE, ddc:620, 0210 nano-technology, 51 Physical Sciences, Graphene nanoribbons, Materials science, 530 Physics, Nanotechnology, 010402 general chemistry, FONCTIONNALISATION DES MATERIAUX EN COUCHES, Monolayer, Functionalization of layered material, ddc:530, Thin film, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Nanocomposite, Graphene, Inks of layered material, Mechanical Engineering, Física, General Chemistry, CARACTERISATION DES MATERAUX EN COUCHES, CROISSANCE DES MATERIAUX EN COUCHE, 5104 Condensed Matter Physics, 0104 chemical sciences, 7 Affordable and Clean Energy, ENCRAGE DES MATERIAUX EN COUCHE
Abstract

We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV–VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resource-consuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown. Section VIII discusses advances in GRM functionalization. A broad range of organic molecules can be anchored to the sp 2 basal plane by reductive functionalization. Negatively charged graphene can be prepared in liquid phase (e.g. via intercalation chemistry or electrochemically) and can react with electrophiles. This can be achieved both in dispersion or on substrate. The functional groups of GO can be further derivatized. Graphene can also be noncovalently functionalized, in particular with polycyclic aromatic hydrocarbons that assemble on the sp 2 carbon network by π–π stacking. In the liquid phase, this can enhance the colloidal stability of SLG/FLG. Approaches to achieve noncovalent on-substrate functionalization are also discussed, which can chemically dope graphene. Research efforts to derivatize CNMs are also summarized, as well as novel routes to selectively address defect sites. In dispersion, edges are the most dominant defects and can be covalently modified. This enhances colloidal stability without modifying the graphene basal plane. Basal plane point defects can also be modified, passivated and healed in ultra-high vacuum. The decoration of graphene with metal nanoparticles (NPs) has also received considerable attention, as it allows to exploit synergistic effects between NPs and graphene. Decoration can be either achieved chemically or in the gas phase. All LMs, can be functionalized and we summarize emerging approaches to covalently and noncovalently functionalize MoS2 both in the liquid and on substrate. Section IX describes some of the most popular characterization techniques, ranging from optical detection to the measurement of the electronic structure. Microscopies play an important role, although macroscopic techniques are also used for the measurement of the properties of these materials and their devices. Raman spectroscopy is paramount for GRMs, while PL is more adequate for non-graphene LMs (see section IX.2). Liquid based methods result in flakes with different thicknesses and dimensions. The qualification of size and thickness can be achieved using imaging techniques, like scanning probe microscopy (SPM) or transmission electron microscopy (TEM) or spectroscopic techniques. Optical microscopy enables the detection of flakes on suitable surfaces as well as the measurement of optical properties. Characterization of exfoliated materials is essential to improve the GRM metrology for applications and quality control. For grown GRMs, SPM can be used to probe morphological properties, as well as to study growth mechanisms and quality of transfer. More generally, SPM combined with smart measurement protocols in various modes allows one to get obtain information on mechanical properties, surface potential, work functions, electrical properties, or effectiveness of functionalization. Some of the techniques described are suitable for 'in situ' characterization, and can be hosted within the growth chambers. If the diagnosis is made 'ex situ', consideration should be given to the preparation of the samples to avoid contamination. Occasionally cleaning methods have to be used prior to measurement., We acknowledge funding from the European Commission Graphene Flagship Core1 (grant agreement 696656) and Core2 (grant agreement 785219).

Published
2020
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29. Low-humidity sensing properties of multi-layered graphene grown by chemical vapor deposition

Author

Pasqualina M. Sarro, Filiberto Ricciardella, Tiziana Polichetti, Sten Vollebregt, Georg S. Duesberg, Ricciardella, F., Vollebregt, S., Polichetti, T., Sarro, P. M., and Duesberg, G. S.

Subjects
Materials science, Scanning electron microscope, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, lcsh:Chemical technology, 01 natural sciences, Biochemistry, Analytical Chemistry, law.invention, symbols.namesake, Sensitivity, law, Relative humidity, lcsh:TP1-1185, Electrical and Electronic Engineering, Instrumentation, Graphene, Atomic force microscopy, Sensors, Communication, Humidity, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Chemical engineering, symbols, Defects, Resistor, 0210 nano-technology, Raman spectroscopy
Abstract

Humidity sensing is fundamental in some applications, as humidity can be a strong interferent in the detection of analytes under environmental conditions. Ideally, materials sensitive or insensitive towards humidity are strongly needed for the sensors used in the first or second case, respectively. We present here the sensing properties of multi-layered graphene (MLG) upon exposure to different levels of relative humidity. We synthesize MLG by chemical vapor deposition, as shown by Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Through an MLG-based resistor, we show that MLG is scarcely sensitive to humidity in the range 30%–70%, determining current variations in the range of 0.005%/%relative humidity (RH) well below the variation induced by other analytes. These findings, due to the morphological properties of MLG, suggest that defective MLG is the ideal sensing material to implement in gas sensors operating both at room temperature and humid conditions.

Published
2020
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30. Laser-induced graphene on cross-linked sodium alginate.

Author

Vićentić T, Greco I, Iorio CS, Mišković V, Bajuk-Bogdanović D, Pašti IA, Radulović K, Klenk S, Stimpel-Lindner T, Duesberg GS, and Spasenović M

Abstract

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a comprehensive understanding of the physicochemical characteristics of the material. Raman spectroscopy, scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy techniques confirm the successful generation of oxidized graphene on the surface of cross-linked sodium alginate. The influence of laser parameters and the amount of crosslinker incorporated into the alginate substrate is explored, revealing that lower laser speed, higher resolution, and increased CaCl 2 content leads to LIG with lower electrical resistance. These findings could have significant implications for the fabrication of LIG on alginate with tailored conductive properties, but they could also play a guiding role for LIG formation on other biocompatible substrates., (Creative Commons Attribution license.)

Published
2023
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31. Atmospheric pulsed laser deposition and thermal annealing of plasmonic silver nanoparticle films.

Author

Khan TM, Mujawar MA, Siewerska KE, Pokle A, Donnelly T, McEvoy N, Duesberg GS, and Lunney JG

Abstract

A new method for pulsed laser deposition of plasmonic silver nanoparticle (NP) films in flowing gas at atmospheric pressure is described. The ablation was done using an excimer laser at 248 nm. Fast optical imaging shows that the ablation plume is captured by the flowing gas, and is expected to form a NP aerosol, which is carried 5-20 mm to the substrate. The dependence of the deposition rate on laser fluence, gas flow velocity, and target-substrate distance was investigated using electron microscopy and absorption spectroscopy of the deposited films. The NP films were annealed in argon and hydrogen at 400 °C, and in air for temperatures in the range 200 °C-900 °C, leading to strong enhancement, and narrowing of the surface plasmon resonance. The films were used for surface enhanced Raman spectroscopy of a 10 -5 molar solution of Rhodamine 6G; films annealed in air at 400 °C were five times more sensitive than the as-deposited films.

Published
2017
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32. Graphene resist interlacing process for versatile fabrication of free-standing graphene.

Author

Kumar S, Rezvani E, Nicolosi V, and Duesberg GS

Subjects
Biocompatible Materials chemistry, Materials Testing, Nanoparticles ultrastructure, Polymers chemistry, Graphite chemistry, Microscopy, Electron, Transmission instrumentation, Nanoparticles chemistry
Abstract

We present a graphene resist interlacing process (GRIP) to sandwich graphene between polymer lines in a cloth-like fashion, making it more accessible for experiments and applications. We demonstrate the handling of large-area graphene in this way. Here, GRIP is used to fabricate supports for transmission electron microscopy. These supports improve the imaging quality of nanoparticles, as we show by comparison to imaging on standard lacey carbon supports.

Published
2012
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33. Sub-20 nm short channel carbon nanotube transistors.

Author

Seidel RV, Graham AP, Kretz J, Rajasekharan B, Duesberg GS, Liebau M, Unger E, Kreupl F, and Hoenlein W

Abstract

Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.

Published
2005
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34. Polarized raman spectroscopy on isolated single-wall carbon nanotubes.

Author

Duesberg GS, Loa I, Burghard M, Syassen K, and Roth S

Subjects
Molecular Conformation, Microchemistry methods, Nanotubes, Carbon analysis, Nanotubes, Carbon chemistry, Refractometry methods, Spectrum Analysis, Raman methods
Abstract

Polarized micro-Raman spectroscopy has been performed on spatially separated single-wall carbon nanotubes (SWNTs) in the form of individual nanotubes or thin ropes of only a few SWNTs. Different from bulk samples, the Raman spectra are composed of well-resolved peaks which allow a direct comparison of experimental data with theoretical calculations. Orientation-dependent measurements reveal maximum intensity of all Raman modes when the nanotubes are aligned parallel to the polarization of the incident laser light. The angular dependences clearly deviate from the selection rules predicted by theoretical studies. These differences are attributed to depolarization effects caused by the strongly anisotropic geometry of the nanotubes and to electronic resonance effects for excitation at 633 nm.

Published
2000
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