375 results on '"Du, Guotong"'
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2. Realization of p-type conduction in compositionally graded quaternary AlInGaN
3. A polyethylene glycol-based form-stable phase change material supported by nanoarray-modified metal foam
4. Solar-blind ultraviolet photodetectors based on homoepitaxial β-Ga2O3 films
5. A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network
6. Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption
7. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer
8. Growth and characterization of porous sp2-BN films with hollow spheres under hydrogen etching effect via borazane thermal CVD
9. Effects of 10 MeV electron irradiation on the characteristics of gallium-nitride-based pin alpha-particle detectors
10. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates
11. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells
12. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate
13. Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD
14. Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide
15. Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104)
16. Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices
17. Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode
18. Study on the electroluminescence properties of the p-NiMgO:Li/MgO/n-ZnO nanowires/ITO heterojunction
19. UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure
20. Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE
21. Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer
22. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes
23. Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
24. Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE
25. Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction
26. Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H–SiC by metal-organic chemical vapor deposition
27. Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition
28. Influence of Sb valency on the conductivity type of Sb-doped ZnO
29. Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(0 0 1) surface by PA-MBE and their in situ XPS analysis
30. Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction
31. Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD
32. Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method
33. The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate
34. Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition
35. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD
36. Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes
37. Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0 0 0 1)
38. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film
39. Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films
40. Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition
41. Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment
42. Realization of wide size range 1D ZnO micro/nano rods for versatile micro/nano devices by controlled seed layer thickness
43. Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes
44. Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy
45. Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source
46. Oxygen-induced physical property variation of deposited ZnO films by metal–organic chemical vapor deposition
47. Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure
48. Electroluminescence of the p-ZnO:As/n-ZnO LEDs grown on ITO glass coated with GaAs interlayer
49. The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD
50. Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes
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