Search

This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.

We prepare a symmetrical double barrier structure of Mo/AlN/Mo/AlN/Mo by using the reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling effect. Characterizations of multilayers demonstrate that the AlN (0002) aligns well along the Mo (110). Direct current-voltage (DC I–V) test finds significant negative differential resistance at room temperature around 0.7 and 0.9 V carrier energy and with peak-to-valley current ratios of about 1.1 and 1.2. The simulation using conventional transfer matrix method suggests good consistence between the designed structure, the quantized energy level and the switching voltage. The large signal DC model also fits the experimental I–V properties. Our work provides a new type of resonant tunneling device in room temperature. • Constructing novel structures for resonant tunneling devices. • The NDR phenomenon at room temperature was obtained. • Preparing devices beyond the shortcomings of magnetron sputtering. • Simultaneous use of physical and electrical models to explain mechanisms. • This work provided a new type of resonant tunneling device. [ABSTRACT FROM AUTHOR]

Purpose – The purpose of this paper is to show the existence results for adapted solutions of infinite horizon doubly reflected backward stochastic differential equations with jumps. These results are applied to get the existence of an optimal impulse control strategy for an infinite horizon impulse control problem. Design/methodology/approach – The main methods used to achieve the objectives of this paper are the properties of the Snell envelope which reduce the problem of impulse control to the existence of a pair of right continuous left limited processes. Some numerical results are provided to show the main results. Findings – In this paper, the authors found the existence of a couple of processes via the notion of doubly reflected backward stochastic differential equation to prove the existence of an optimal strategy which maximizes the expected profit of a firm in an infinite horizon problem with jumps. Originality/value – In this paper, the authors found new tools in stochastic analysis. They extend to the infinite horizon case the results of doubly reflected backward stochastic differential equations with jumps. Then the authors prove the existence of processes using Envelope Snell to find an optimal strategy of our control problem.

Direct manufacturing of two-dimensional material-based double barrier (DB) tunnel junctions, based on a lithography-free approach was developed. Graphene/h-BN/Graphene/h-BN/Graphene devices were deposited on Si/SiO2 substrates by employing a plasma enhanced chemical vapor deposition technique in a sequential manner. DB tunneling junctions with varying barrier widths (by varying the thickness of the second graphene layer) were studied. Samples were characterized using Raman, Atomic Force Microscopy and X-ray photoemission spectroscopy. The I–V characteristics of tunneling current showed resonant tunneling behavior at room temperature with a negative differential conductance. The behavior could be explained with quantum mechanical double barrier tunneling model in which analytic solutions to Schrödinger's equation were obtained in each region of the system. Resonances in transmission probability coefficient for varying barrier widths were evaluated and compared with the experimental results. [ABSTRACT FROM AUTHOR]

Purpose - The purpose of this paper is to show the existence results for adapted solutions of infinite horizon doubly reflected backward stochastic differential equations with jumps. These results are applied to get the existence of an optimal impulse control strategy for an infinite horizon impulse control problem. Design/methodology/approach - The main methods used to achieve the objectives of this paper are the properties of the Snell envelope which reduce the problem of impulse control to the existence of a pair of right continuous left limited processes. Some numerical results are provided to show the main results. Findings - In this paper, the authors found the existence of a couple of processes via the notion of doubly reflected backward stochastic differential equation to prove the existence of an optimal strategy which maximizes the expected profit of a firm in an infinite horizon problem with jumps. Originality/value - In this paper, the authors found new tools in stochastic analysis. They extend to the infinite horizon case the results of doubly reflected backward stochastic differential equations with jumps. Then the authors prove the existence of processes using Envelope Snell to find an optimal strategy of our control problem. [ABSTRACT FROM AUTHOR]

A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibrated physical models with bearing mobility degradation by surface roughness in account, the recess gate and double barrier of the proposed device achieves a maximum drain current density (ID,max) of 1149 mA/mm and a maximum transconductance (gD,max) of 358 mS/mm with a positive threshold voltage (Vth) of 0.2 V. The small polarization charge of first barrier is responsible for positive Vth. IDS,max in the double barrier HEMT at high gate bias condition is due to injection of electrons from upper 2DEG which is almost impossible at lower gate voltage because of insufficient energy to cross the barrier. The injection of electrons is further supported by the second peak in the gm curve at low gate bias VG = 1V. The outcome of this study suggests that the proposed device will be beneficial for high-frequency and high-power electronic applications.

This paper aims to study the asymptotic behavior of double barrier American-style put option prices under an uncertain volatility model, which degenerates to a single point. We give an approximation of the double barrier American-style option prices with a small volatility interval, expressed by the Black–Scholes–Barenblatt equation. Then, we propose a novel representation for the early exercise boundary of American-style double barrier options in terms of the optimal stopping boundary of a single barrier contract. [ABSTRACT FROM AUTHOR]

The paper discusses the chiral tunneling of charge carriers through double barrier structure in twisted graphene bilayer. The theoretical analysis investigates the transmission probability for various system parameters under both symmetric and asymmetric barrier conditions. The results reveal that the transmission probability of quasiparticles in the K cone is mirror symmetric to that of K θ cone about φ = 0. Furthermore, the study shows that the transmission changes gradually from perfect transmission to perfect reflection in the normal direction by increasing the incident energy and the barrier height, which is different from the case of monolayer and AB-stacked bilayer graphene. It is also found that the double barrier structure remains, only in certain cases, perfectly transparent for normal or near-normal incidence. The chiral nature of the quasiparticles in graphene causes the tunneling to be highly dependent on the direction and also on the double barrier structure. Interestingly, this characteristic provides additional parameter that allows us to tune the electronic properties of the twisted graphene bilayer. Additionally, we found that the transmission exhibits some sharp resonance peaks, the number and amplitude of which depend on the system parameters. Our results provide a better understanding of chiral tunneling in twisted graphene bilayers through double barrier structures, which may thus offer efficient tools to control the transport properties in future graphene-based nanodevices like transistors and photodetectors. • Chiral Tunneling in twisted graphene bilayer. • Transmission through double barrier structure. • The transmission in the K cone is mirror symmetric to that of K θ cone about ϕ = 0. • The double barrier structure remains perfectly transparent for normal or near-normal incidence in certain cases. • The periodicity of transmission with U 2 and U 4 is not affected by d 2 − 1. [ABSTRACT FROM AUTHOR]

Vacuum windows are an essential part of any radio frequency (RF) system which launches/couples RF power from an atmospheric to a vacuum environment. This paper describes the RF design of a double barrier ceramic coaxial vacuum window. Alumina 99.5% pure is considered as ceramic barrier material while inner and outer conductors are oxygen-free copper. As the initial design approach the thickness, slope, depth of ceramic in the conductor is varied and the performance of the window is studied. The design is optimised to achieve the best insertion loss, return loss response for operating frequency range up to 65MHz. [ABSTRACT FROM AUTHOR]

In this paper, we apply an improved version of Monte Carlo methods to pricing barrier options. This kind of options may match with risk hedging needs more closely than standard options. Barrier options behave like a plain vanilla option with one exception. A zero payoff may occur before expiry, if the option ceases to exist; accordingly, barrier options are cheaper than similar standard vanilla options. We apply a new Monte Carlo method to compute the prices of single and double barrier options written on stocks. The basic idea of the new method is to use uniformly distributed random numbers and an exit probability in order to perform a robust estimation of the first time the stock price hits the barrier. Using uniformly distributed random numbers decreases the estimation of first hitting time error in comparison with standard Monte Carlo or similar methods. It is numerically shown that the answer of our method is closer to the exact value and the first hitting time error is reduced.

Abstract. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density. The tunneling probability was calculated by employing the Schroedinger equation, WKB approximation and Green function. Width of potential well, width and height of barrier were varied to obtain the highest tunneling probability value. The current density was contributed by diffusion, and tunneling current densities. It was found that current density had a peak of 3950 A/m2 at 0.56 volt forward bias. Furthermore, the fabrication of p-i-n a-Si device with double barrier structure was successfully carried out. To realize the double barrier structure, optimization of optical band gap of barrier a-SiC:H was done by varying ratio of CH4 to [CH4+SiH4]. The fabrication of p-i-n a-Si device was then done by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique with a structure of glass substrate/TCO/p-a-Si:H (2.15 eV;140Ã…)/i-a-Si:H (1.81 eV;1800 Ã…)/barrier a-SiC:H (2.36 eV;45 Ã…)/potential well i-a-Si:H (1/81 eV; 30 Ã…)/barrier a-SiC:H (2.36 eV; 45 Ã…)/n-a-Si:H (1.81 eV;180 Ã…)/Al. The I-V characteristic of the device showed a peak current calue at 0.55 forward bias. Simulasi dan Fabrikasi Struktur Double Barrier pada Divais Amorphous Silicon Sari. Aplikasi struktur double barrier (DB) pada divais amorphous silicon (a-Si) telah dilakukan untuk memperoleh beberapa parameter divais seperti probabilitas tunneling dan rapat arus. Probabilitas tunneling dihitung dengan menerapkan persamaan Schroedinger, pendekatan WKB dan fungsi Green. Lebar sumur potensial, lebar dan tinggi barrier telah divariasikan untuk memperoleh harga probabilitas tunneling yang maksimum. Rapat arus total dari divais dalam perhitungan ini merupakan jumlah dari rapat arus difusi dan rapat arus tunneling. Diperoleh bahwa rapat arus total memiliki nilai maksimum sebesar 3950 A/m2 pada tegangan bias maju 0,56 volt. Selanjutnya, telah berhasil juga difabrikasi divais p-i-n a-Si dengan struktur double barrier. Didapatkan bahwa karakteristik I-V dari divais menunjukkan adanya puncak rapat arus pada tegangan bias maju 0,55 volt. ihamidah@eudoramail.com

In this article, two general results are provided about the multidimensional Black–Scholes partial differential equation: its fundamental solution is derived, and it is shown how to turn it into the standard heat equation in whatever dimension. A fundamental connection is established between the multivariate normal distribution and the linear second order partial differential operator of parabolic type. These results allow to compute new closed form formulae for the valuation of multiasset options, with possible boundary crossing conditions, thus partially alleviating the « curse of dimensionality », at least in moderate dimension. [ABSTRACT FROM AUTHOR]

As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM), the perpendicular magnetic anisotropy (PMA) magnetic tunnel junction (MTJ) has been extensively studied in recent years. Lowering the critical switching current and improving the data retention are two crucial pathways to optimize the performance of STT-MRAM. However, the conventional MTJ can merely achieve both. In this paper, we present a physics-based compact model of Ta/CoFeB/MgO PMA double-barrier MTJ (DMTJ) with enhanced thermal stability recording structure. Combination of double-barrier and synthetic double-free layers can heighten the STT effect and enhance the thermal stability simultaneously. A larger STT switching efficiency, compared with conventional MTJ, can thus be realized. The modeling results show great agreement with experimental results. A 1-bit magnetic full adder (MFA) based on DMTJ, as a hybrid logic-in-memory circuit example, has been designed and simulated to validate its functionality. This SPICE-compatible compact model will be useful for high-performance hybrid MTJ/CMOS circuit and system designs. [ABSTRACT FROM AUTHOR]

In this study, we investigated and simulated the structure of a quantum well resonant tunneling (QWRT) transistor based on two barriers and a well in the middle. The barriers were formed of semiconductors with a higher bandgap and the well separating the barriers comprised a semimetal-like material with a very small bandgap, i.e., close to zero. The device was positioned on the oxide to exploit the benefits of SOI technology, e.g., improving leakage and the immunity of the device against environment effects. When the well thickness was a few nanometers, the electron-bound states appeared in the quantum well region. By tuning the voltage and work function of the top gate, the bound states moved in the potential well and the carriers were transferred through the well via the resonant tunneling phenomenon. Our simulations showed the step-like behavior of the output characteristics and the oscillatory quantum switching of the transfer characteristics for the proposed device. We also investigated the influence of the well thickness and gate voltage on the device characteristics, and we compared the optimal case with a theoretical analysis of a QWRT transistor based on a topological insulator. • Quantum well resonant tunneling (QWRT) transistor based on a topological insulator. • Counterpart QWRT conventional device simulated using ATLAS. • NEGF employed to consider tunneling, ballistic transport, and quantum confinement. • Transfer and output characteristics compared between two devices. • Impact of well thickness assessed on output conductance and I d –V d characteristics. [ABSTRACT FROM AUTHOR]

Abstract We study spin-dependent electron transport properties of two dimensional graphene double and triple barrier junctions via first-principles calculations. The double barrier junction consists of two graphene leads, a quantum well of zigzag graphene nanoribbon (ZGNR) in the center, and two vacuum barriers separating the ZGNR from the two leads. Resonant electron tunneling occurs when the energy bands of graphene and ZGNR are well aligned in energy and wavevector. Highly spin-polarized electron transmission arises in such junctions when the two edges of the center ZGNR are in the ferromagnetic configuration. The spin polarization of the electron transmission at the Fermi energy can be tuned by gate voltage. We further investigate the dependence of the electron transmission on the width of the ZGNR, effects on barrier height when replacing vacuum by h -BN, and the consequence of replacing a double barrier by a triple barrier. Graphical abstract Image 1 [ABSTRACT FROM AUTHOR]

In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (gm)−gate voltage (VG) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive VG. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (VTH) toward an enhancement-mode characteristic.

This paper studies an infinite horizon impulse control problem where the costs are given by a diffusion process. The properties of the Snell envelope reduce this problem to the existence of a pair of continuous processes; this allows to establish an optimal impulse control solution. Finally, stability estimates and simulation results are provided. [ABSTRACT FROM AUTHOR]

In this paper, we apply an improved version of Monte Carlo methods to pricing barrier options. This kind of options may match with risk hedging needs more closely than standard options. Barrier options behave like a plain vanilla option with one exception. A zero payoff may occur before expiry, if the option ceases to exist; accordingly, barrier options are cheaper than similar standard vanilla options. We apply a new Monte Carlo method to compute the prices of single and double barrier options written on stocks. The basic idea of the new method is to use uniformly distributed random numbers and an exit probability in order to perform a robust estimation of the first time the stock price hits the barrier. Using uniformly distributed random numbers decreases the estimation of first hitting time error in comparison with standard Monte Carlo or similar methods. It is numerically shown that the answer of our method is closer to the exact value and the first hitting time error is reduced. [ABSTRACT FROM AUTHOR]

A new Monte Carlo method is presented to compute the prices of digital barrier options on stocks. The main idea of the new approach is to use an exceedance probability and uniformly distributed random numbers in order to efficiently estimate the first hitting time of barriers. It is numerically shown that the answer of this method is closer to the exact value and the first hitting time error of the modified Monte Carlo method decreases much faster than of the standard Monte Carlo methods. [ABSTRACT FROM AUTHOR]

In this paper we simulated a photodetector based on a double barrier GaAs/InGaAs/InAs quantum dots-quantum well hybrid structure, calculated its I-V and C-V characteristic and studied the electronic states of the self-assembled InAs quantum dots embedded in InGaAs and GaAs quantum wells. By optimizing the device structure, ultrahigh sensitivity was obtained. We attributed this high sensitivity to the double barrier structure that effectively lowered dark current. This simulation method can be used to designing and optimizing devices with similar structure. [ABSTRACT FROM AUTHOR]

In close analogy with optical Fabry-Pérot (FP) interferometer, we rederive the transmission and reflection coefficients of tunneling through a rectangular double barrier (RDB). Based on the same analogy, we also get an analytic finesse formula for its filtering capability of matter waves, and with this formula, we reproduce the RDB transmission rate in exactly the same form as that of FP interferometer. Compared with the numerical results obtained from the original finesse definition, we find the formula works well. Next, we turn to the elusive time issue in tunneling, and show that the " generalized Hartman effect" can be regarded as an artifact of the opaque limit βl → ∞. In the thin barrier approximation, phase (or dwell) time does depend on the free inter-barrier distance d asymptotically. Further, the analysis of transmission rate in the neighborhood of resonance shows that, phase (or dwell) time could be a good estimate of the resonance lifetime. The numerical results from the uncertainty principle support this statement. This fact can be viewed as a support to the idea that, phase (or dwell) time is a measure of lifetime of energy stored beneath the barrier. To confirm this result, we shrink RDB to a double Dirac δ-barrier. The landscape of the phase (or dwell) time in k and d axes fits excellently well with the lifetime estimates near the resonance. As a supplementary check, we also apply phase (or dwell) time formula to the rectangular well, where no obstacle exists to the propagation of particle. However, due to the self-interference induced by the common cavity-like structure, phase (or dwell) time calculation leads to a counterintuitive "slowing down" effect, which can be explained appropriately by the lifetime assumptions. [ABSTRACT FROM AUTHOR]

In this paper, we establish closed-form formulas for key probabilistic properties of the cone-constrained optimal mean-variance strategy, in a continuous market model driven by a multidimensional Brownian motion and deterministic coefficients. In particular, we compute the probability to obtain to a point, during the investment horizon, where the accumulated wealth is large enough to be fully reinvested in the money market, and safely grow there to meet the investor's financial goal at terminal time. We conclude that the result of Li and Zhou [ Ann. Appl. Prob., v.16, pp.1751-1763, (2006)] in the unconstrained case carries over when conic constraints are present: the former probability is lower bounded by 80% no matter the market coefficients, trading constraints, and investment goal. We also compute the expected terminal wealth given that the investor's goal is underachieved, for both the mean-variance strategy and the aforementioned hybrid strategy where transfer to the money market occurs if it allows to safely achieve the goal. The former probabilities and expectations are also provided in the case where all risky assets held are liquidated if financial distress is encountered. These results provide investors with novel practical tools to support portfolio decision-making and analysis. Copyright © 2013 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

We study the Goos–Hänchen like shifts for Dirac fermions in graphene scattered by double barrier structures. After obtaining the solution for the energy spectrum, we use the boundary conditions to explicitly determine the Goos–Hänchen like shifts and the associated transmission probability. We analyze these two quantities at resonances by studying their main characteristics as a function of the energy and electrostatic potential parameters. To check the validity of our computations we recover previous results obtained for a single barrier under appropriate limits. [ABSTRACT FROM AUTHOR]

We establish existence results for adapted solutions of infinite horizon backward stochastic differential equations with two reflected barriers. We also apply these results to get the existence of an optimal impulse control strategy for the infinite horizon impulse control problem. The properties of the Snell envelope reduce our problem to the existence of a pair of continuous processes. [ABSTRACT FROM PUBLISHER]

The mode-dependent transmission of relativistic ballistic massless Dirac fermion through a graphene based double barrier structure is being investigated for various barrier parameters. We compare our results with already published work and point out the relevance of these findings to a systematic study of the transport properties in double barrier structures. An interesting situation arises when we set the potential in the leads to zero, then our 2D problem reduces effectively to a 1D massive Dirac equation with an effective mass proportional to the quantized wave number along the transverse direction. Furthermore we have shown that the minimal conductivity and maximal Fano factor remain insensitive to the ratio between the two potentials $(\frac{V_{2}}{V_{1}}=\alpha)$. [ABSTRACT FROM AUTHOR]

Abstract: In this paper we propose a new method for pricing double-barrier options with moving barriers under the Black–Scholes and the CEV models. First of all, by applying a variational technique typical of the boundary element method, we derive an integral representation of the double-barrier option price in which two of the integrand functions are not given explicitly but must be obtained solving a system of Volterra integral equations of the first kind. Second, we develop an ad hoc numerical method to regularize and solve the system of integral equations obtained. Several numerical experiments are carried out showing that the overall algorithm is extraordinarily fast and accurate, even if the barriers are not differentiable functions. Moreover the numerical method presented in this paper performs significantly better than the finite difference approach. [Copyright &y& Elsevier]

A 10-V programmable Josephson voltage standard (PJVS) circuit including 524 288 vertically stacked NbN/TiN/NbN Josephson junctions was successfully fabricated without any defects. The chip was cooled with a compact cryocooler at a temperature of 9.8 K and generated an output voltage of 17.3 V with the first Shapiro step height of 1.0 mA under microwave irradiation at 16 GHz. Furthermore, the circuit design having the high output voltage increased the number of available chips for the 10-V PJVS. The fabrication yield for the chip, which generates greater than 10 V, was 36%, which is ten times greater than that for a perfect chip without any defects. This method was not effective for the chip that had serious defects, such as a disconnection across the array or short between the array and ground; thus, efforts to reduce such defects, e.g., frequent maintenance inside vacuum chambers for film preparation and etching, were found to be essential. [ABSTRACT FROM AUTHOR]

Low-frequency noise was studied in MgO magnetic tunnel junctions (MTJs). The junctions were analyzed under saturating magnetic fields to minimize the noise of magnetic origin. Low-frequency noise of magnetically saturated MTJs is dominated by two different types of electrical noise: 1 / f noise and random telegraph noise (RTN). 1/f noise is always present and represents the ultimate limitation for low-frequency applications. The RT noise component has a higher contribution for lower resistance area (RA) product samples and its magnitude increases with bias voltage. The 1/f noise of different MTJs can be compared using the Hooge parameter (α). This paper shows a systematic decrease in a with increasing bias voltage for MTJs with varying RA. All the MTJs studied, for both memory and sensor applications with single and double barrier, exhibit higher a variations while saturated in the anti-parallel state (AP) and no significative dependence on bias polarity was observed. Variations above one order of magnitude were observed for MTJs with RA > 10 kΩ·μm[sup2] in the AP. For the same bias voltage, the lowest a's were always obtained in the parallel state (P). The lowest α(∼ 1 E[sup10] μm[sup2]) was obtained for the lower RA sample (∼500Ω· μm[sup2]) saturated in P, with an applied bias voltage of 600 mV. [ABSTRACT FROM AUTHOR]

Abstract: Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 103 times larger than that of conventional MTT, since tunneling through AlOx barrier provides much larger current density than that through Schottky barrier. [Copyright &y& Elsevier]

We consider a Brownian motion with time-reversible Markov-modulated speed and two reflecting barriers. A methodology depending on a certain multidimensional martingale together with some linear algebra is applied in order to explicitly compute the stationary distribution of the joint process of the content level and the state of the underlying Markov chain. It is shown that the stationary distribution is such that the two quantities are independent. The long-run average push at the two barriers at each of the states is also computed. [ABSTRACT FROM AUTHOR]

We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double-barrier GaAs–AlxGa1−xAs heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describes channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder. [Copyright &y& Elsevier]

Abstract: We present tight-binding calculations of the current-induced spin torque in double-barrier magnetic tunnel junctions (DBMTJ) using the non-equilibrium Keldysh formalism. The components of the local spin torque in the central ferromagnetic region, parallel, , and perpendicular, , to the interface are strongly enhanced for certain thickness of the middle layer. The underlying mechanism for the spin torque enhancement is the relative position of the majority and minority quantum well states within the bias energy window around the Fermi level. Both and exhibit oscillatory behavior in the middle FM region. [Copyright &y& Elsevier]

In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate region, and two different Al% (15% and 20%) in the bottom AlGaN barriers are designed. First of all, a double hump trans-conductance (gm)–gate voltage (VG) characteristic is observed in a recessed gate AlGaN/GaN MIS-HEMT with a 5 nm remaining bottom Al0.2Ga0.8N barrier under the gate region. Secondly, a physical model is proposed to explain this double channel characteristic by means of a formation of a top channel below the gate dielectric under a positive VG. Finally, the impacts of Al% content (15% and 20%) in the bottom AlGaN barrier and 5 nm/3 nm remaining bottom AlGaN barriers under the gate region are studied in detail, indicating that lowering Al% content in the bottom can increase the threshold voltage (VTH) toward an enhancement-mode characteristic. [ABSTRACT FROM AUTHOR]

The novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm2 at room temperature was demonstrated for the 4 nm-InGaAs-well. [Copyright &y& Elsevier]