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In the present work, low cycle fatigue (LCF) behavior of an equiatomic CoCrFeMnNi high entropy alloy (HEA) is correlated to the microstructural evolution at 550 °C. The fully reversed strain-controlled fatigue tests were conducted in air under strain amplitudes ranging from 0.2% to 0.8%. The measured cyclic stress response showed three distinct stages which include initial cyclic hardening followed by a quasi-stable cyclic response until failure. The rate and amount of cyclic hardening increased with the increase in strain amplitude. In comparison to common austenitic stainless steels, CoCrFeMnNi HEA shows comparable strength and improved LCF lifetime at similar testing conditions. Electron-microscopy investigations after failure reveal no noticeable change in grain size, texture and annealing twins density. Initial cyclic hardening is attributed to the dislocations multiplication and dislocation-dislocation as well as dislocation-solute atom interactions. The quasi-stable cyclic response is associated with the equilibrium between dislocation multiplication and annihilation, which also leads to the formation of complex dislocation structures such as ill-defined walls and cells, particularly at higher strain amplitudes. Besides, the material exhibits serrated plastic-flow due to interactions between mobile dislocations and diffusing solute atoms (such as Cr, Mn and Ni). Lastly, segregation in the form of Cr- and NiMn-enriched phases were observed near grain boundaries, which appears to have a detrimental effect on the fatigue life.

The collaborative study is focused on the relationship between microstructure and yield stress for an ODS Fe-9%Cr-based transformable alloy and an ODS Fe-14%Cr-based ferritic alloy. The contributions to the total room temperature yield stress arising from various strengthening mechanisms are addressed on the basis of a comprehensive description of the microstructures uncovered by means of transmission electron microscopy (TEM), electron backscatter diffraction (EBSD), small-angle neutron scattering (SANS) and atom probe tomography (APT). While these methods provide a high degree of complementarity, a reasonable agreement was found in cases of overlap of information. The derived set of microstructure parameters along with reported strengthening equations was used to calculate the room temperature yield stress. The estimates were critically compared with the measured yield stress for an extended set of alloys including data reported for Fe-Cr model alloys and steels thus covering one order of magnitude or more in grain size, dislocation density, particle density and yield stress. The comparison shows that particle strengthening, dislocation forest strengthening, and Hall-Petch strengthening are the major contributions and that a mixed superposition rule reproduces the measured yield stress within experimental scatter for the whole extended set of alloys. The wide variation of microstructures additionally underpins the conclusions and goes beyond previous work, in which one or few ODS steels and narrow microstructure variations were typically covered.

We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs) is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.