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Developing a fundamental understanding of charge transport in organic semiconductors has been a decades-long challenge that hinders performance improvement. In particular, recent work suggests that organic semiconductors have unique charge–phonon interactions where phonons temporarily interrupt the band structure causing a transient localization of charge carriers. Despite growing evidence to support this mechanism, further understanding and control will depend on pinpointing the molecular motions that cause substantial change to the band structure. Here we combine experimental and theoretical techniques to demonstrate the phonon energies and associated molecular motions governing the charge–phonon interaction in single crystal tetracene. We investigate phonon properties using polarized Raman spectroscopy, transmission electron microscopy, and density functional theory, and correlate this with the anisotropic mobility. We find that specific phonons disrupt the band orbital in the high-mobility direction, evident in the discrepancy between measured and static calculations of the mobility anisotropy ratio in tetracene. The electronic structure and transport properties of organic semiconductors are known not to follow standard semiconductor models and a complete understanding is still lacking in the literature. The authors experimentally and theoretically demonstrate the role of phonon–charge interactions on the highest occupied molecular orbital and mobility of the organic semiconductor tetracene.

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger’s equation can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.

Large perturbation transient photovoltage and impedance spectroscopy measurements are used to gain insights into recombination in organic photovoltaic devices. The combination of these two simple optoelectronic techniques enables characterization of recombination order as well as mobile and trapped charge evolution over a large range of carrier densities. The data show that trapped charge is approximately equal to total charge at low carrier densities in the high efficiency devices measured. Between low and high charge carrier density, the order of recombination is observed to vary from monomolecular to bimolecular to higher order. The new techniques and methods presented can be applied to any type of photovoltage device to gain insight into device operation and limitations.

The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization., 15 pages, 5 figures

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the "intrinsic" transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals., 26 pages, 7 figures