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When an ensemble of quantum emitters couples to a common radiation field, their polarizations can synchronize and a collective emission termed superfluorescence can occur. Entering this regime in a free-space setting requires a large number of emitters with a high spatial density as well as coherent optical transitions with small inhomogeneity. Here, we show that, by coupling nitrogen-vacancy centers in a diamond membrane to a high-finesse microcavity, also few, incoherent, inhomogeneous, and spatially separated emitters—as are typical for solid state systems—can enter the regime of collective emission. We observe a superlinear power dependence of the emission rate as a hallmark of collective emission. Furthermore, we find simultaneous photon bunching and antibunching on different timescales in the second-order autocorrelation function, revealing cavity-induced interference in the quantized emission from about 15 emitters. We develop theoretical models for mesoscopic emitter numbers to analyze the behavior in the Dicke state basis and find that the population of collective states together with cavity enhancement and filtering can explain the observations. Such a system has prospects for the generation of multiphoton quantum states, the preparation of entanglement in few-emitter systems, and enhancement of signals in quantum sensing.

Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to T_{2}=430 μs. With dynamical decoupling, we can prolong coherence to T_{2}=10 ms, about a sixfold improvement compared to earlier works. We also observe a nearby coupling ^{13}C spin, which may serve as a quantum memory, thus substantiating the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures.

The hot forming process allows to produce safety-relevant structural components in the automotive industry with strengths of 1500 MPa and higher. Generally, high strengths make material sensitive to hydrogen embrittlement. The heat treatment in the hot forming process chain is a potential source of diffusible hydrogen for hot-dipped aluminum-silicon coated boron-manganese steels. In the present work, the influence of different process gases and furnace dwell times during the heat treatment was investigated. Humidified process gases such as synthetic air, nitrogen, oxygen and carbon dioxide were used. The results of the thermal desorption mass spectrometry (TDMS) revealed a more pronounced hydrogen uptake for nitrogen and carbon dioxide gas atmosphere than for synthetic air and oxygen. Furthermore, different material conditions were investigated regarding their sensitivity to hydrogen absorption. The flat-rolled material tends to suffer a higher hydrogen absorption compared to the reference material when using humidified process gases. Materials being pretreated with dry synthetic air point at a relation between the duration time of the pretreatment and the content of absorbed hydrogen.

Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.

The development of quantum technologies is one of the big challenges in modern research. A crucial component for many applications is an efficient, coherent spin–photon interface, and coupling single-color centers in thin diamond membranes to a microcavity is a promising approach. To structure such micrometer thin single-crystal diamond (SCD) membranes with a good quality, it is important to minimize defects originating from polishing or etching procedures. Here, we report on the fabrication of SCD membranes, with various diameters, exhibiting a low surface roughness down to 0.4 nm on a small area scale, by etching through a diamond bulk mask with angled holes. A significant reduction in pits induced by micromasking and polishing damages was accomplished by the application of alternating Ar/Cl2 + O2 dry etching steps. By a variation of etching parameters regarding the Ar/Cl2 step, an enhanced planarization of the surface was obtained, in particular, for surfaces with a higher initial surface roughness of several nanometers. Furthermore, we present the successful bonding of an SCD membrane via van der Waals forces on a cavity mirror and perform finesse measurements which yielded values between 500 and 5000, depending on the position and hence on the membrane thickness. Our results are promising for, e.g., an efficient spin–photon interface.

Osteoporosis causes bones to become weak and brittle. It is known that the alterations in bone metabolism associated to osteoporosis can impair bone healing around implants and affect their osseointegration. The main objective of this study was the development of new nanostructured implant materials based on ultrananocrystalline diamond (UNCD) coatings for enhancing osseointegration. The films were deposited on Ti substrates by microwave plasma CVD from 17% CH4/N2 gas mixtures and modified by O2 or NH3/N2 plasmas. The modifications rendered the H-terminated hydrophobic as-grown films hydrophilic. The interaction of endothelial (EA.hy926) and osteosarcoma (MG63) cells with differently modified UNCD surfaces was investigated by proteome analyses. It revealed the identification of over 19 000 proteins (extracellular and cytosolic). They correspond to 508 (Ti), 634 (UNCD), 651 (O-UNCD), and 668 (NH2-UNCD) protein groups. The interaction network analysis showed differences in the connectivity of inferred protein networks between the ECM niches, which suggests the presence of specific cell microenvironments on O- and NH2-terminated UNCD surfaces. Our results show that due to a favorable combination of surface chemical and topological properties the UNCD films, as-grown and especially after their plasma modifications, may serve as superior scaffolding for promoting the cell attachment and growth during osseointegration.