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We report on the gating in GaAs-(Al,Ga)As heterostructures using the electrical double layer of ionic liquids. We employ tetrabutylammonium bis(trifluoromethylsulfonyl)imide for the ionic liquid, which has a melting point of 92 degC. As the 'ionic liquid' is solid at room temperature, the device operation is more stable compared to when an aqueous electrolyte is used. Hysteretic behavior appeared in the variation of the resistance when the negative gate bias exceeded [?][?]3 V, which is considered to be the electrochemical window of the ionic liquid. Temporary gate degradation occurred when the positive gate bias was larger than 8 V. We attribute these characteristics to the generation of space charge and its slow dissipation in the ionic liquid. The gating ceases to function at low temperatures with a transition range of 100-200 K due to the freezing of ions. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

In situ band gap mapping of the V2O5(001) crystal surface revealed a reversible metal-to-insulator transition at 350-400 K, which occurs inhomogeneously across the surface and expands preferentially in the direction of the vanadyl (V=O) double rows. Supported by density functional theory and Monte Carlo simulations, the results are rationalized on the basis of the anisotropic growth of vanadyl-oxygen vacancies and a concomitant oxygen loss driven metal-to-insulator transition at the surface. At elevated temperatures irreversible surface reduction proceeds sequentially as V2O5(001) --> V6O13(001) --> V2O3(0001).