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The development of ultrafast scintillators is critical to the GHz X‐ray and time‐of‐flight (TOF) imaging techniques. Low‐dimensional silver‐based halides have emerged as promising candidates due to high radioluminescence efficiency and ultrafast decay time. However, the ultrafast scintillation mechanism in silver‐based halides, such as Rb2AgBr3 (RAB), remains controversial. Here, the study reveals the origin of ultrafast scintillation timing response in melt‐grown RAB bulk crystals. The RAB shows light‐yellow emission with a photoluminescence quantum yield (PLQY) of 13.9%. Under the picosecond (ps) pulse X‐ray irradiation, RAB has an ultrafast decay time of 3.2 ns that accounts for 40.5% of the total emitted light. The light yield is estimated as 3100 photons MeV−1 under 22Na irradiation. Based on the temperature‐dependent radioluminescence (RL) spectroscopy, electron paramagnetic resonance (EPR) spectroscopy, and spectrally resolved thermally‐stimulated luminescence (TSL) glow curves, it is confirmed that the bromine vacancy as the F‐center is the origin of the ultrafast scintillation component. These findings provide elaborated and fundamental insights into the ultrafast luminescent mechanisms of low‐dimensional silver‐based halides, thereby opening up new design horizons in the development of ultrafast scintillators. [ABSTRACT FROM AUTHOR]

Single-phase white light emitters have become a potential substitute for tricolor phosphor mixtures for the white light-emitting diodes (WLEDs) application to simplify device structure and eliminate self-absorption. Newly developed lowdimensional halides, noted for their highly efficient luminescent characteristics, have seen increasing interest in recent years. Herein, highly efficient white-light emission is demonstrated in single-phase zero-dimensional halide single crystal, namely monovalent Cu-doped Cs2HfCl6. Cs2HfCl6:Cu single crystals have three luminescent centers. Two emission peaks at 365 nm and 380 nm correspond to the intrinsic self-trapped excitons emission and a defect-related trapped exciton emission, respectively. Cu doping introduces an intense Cu-bound exciton emission peaking at 540 nm with a large Stokes shift of 250 nm and a high photoluminescence quantum yield of 68%. With different excitation wavelengths and Cu-doping concentrations, Cs2HfCl6:Cu single crystals show tunable emissions. Under 254 nm ultraviolet light excitation, Cs2HfCl6:0.5%Cu yields cold white light with a high color rendering index (Ra = 87.3). These findings demonstrate the potential of Cs2HfCl6:Cu as a promising phosphor for cold WLEDs. [ABSTRACT FROM AUTHOR]

In this study, we conducted an extensive investigation into broadband near-infrared luminescence of Cr3+-doped Ca3Y2Ge3O12 garnet, employing first-principles calculations within the density functional theory framework. Our initial focus involved determining the site occupancy of Cr3+ activator ions, which revealed a pronounced preference for the Y3+ sites over the Ca2+ and Ge4+ sites, as evidenced by the formation energy calculations. Subsequently, the geometric structures of the excited states 2E and 4T2, along with their optical transition energies relative to the ground state 4A2 in Ca3Y2Ge3O12:Cr3+, were successfully modeled using the ΔSCF method. Calculation convergence challenges were effectively addressed through the proposed fractional particle occupancy schemes. The constructed host-referred binding energy diagram provided a clear description of the luminescence kinetics process in the garnet, which explained the high quantum efficiency of emission. Furthermore, the accurate prediction of thermal excitation energy yielded insights into the thermal stability of the compound, as illustrated in the calculated configuration coordinate diagram. More importantly, all calculated data were consistently aligned with the experimental results. This research not only advances our understanding of the intricate interplay between geometric and electronic structures, optical properties, and thermal behavior in Cr3+-doped garnets but also lays the groundwork for future breakthroughs in the high-throughput design and optimization of luminescent performance and thermal stability in Cr3+-doped phosphors. [ABSTRACT FROM AUTHOR]

The urgency for cost‐effective, high‐resolution, flexible X‐ray imaging detectors is generating great demand for scintillators with low‐temperature processability, high scintillation yield, and negligible afterglow. X‐ray imaging materials are currently dominated by inorganic scintillators in the form of rigid films and bulk crystals, which have inherent limitations including high‐temperature, complex synthesis, and considerable challenges toward advanced nonplanar imaging. Here, high‐performance and flexible X‐ray scintillators based on novel zero‐dimensional (0D) (BTPP)2MnX4 (BTPP = benzyltriphenylphosphonium; X = Cl, Br) halides are reported. They emit bright green light originating from the 4T1‐6A1 transition of Mn2+ under X‐ray excitation. In particular, (BTPP)2MnBr4 single crystals exhibit excellent air‐ and radiation‐stability, a high scintillation yield of 53 000 photons MeV−1, a low detection limit of 89.9 nGyair s−1, and an ultralow afterglow comparable to commercial Bi4Ge3O12 (BGO) single crystals. Moreover, the (BTPP)2MnCl4@polydimethylsiloxane (PDMS) flexible scintillation screens achieve a high spatial resolution of 14.1 lp mm−1 and realize high‐quality imaging results of nonplanar objects. This study demonstrates that the flexible scintillation screens based on low‐dimensional Mn(II) hybrid halides have significant potential for low‐dose and high‐resolution X‐ray imaging applications. [ABSTRACT FROM AUTHOR]

Conjugated BaI2:Eu (5 at.%) nanocrystalline particles were synthesized, decorated with golden nanoparticles (GNP). GNP demonstrated some hydrophilic effect, leading to the BaI2·H2O phase creation. The Eu2+ luminescence intensity was reduced according to the GNP content. This was due to the decreased number of Eu2+ ions in the BaI2, most probably, arising from the Au substitution for Ba competing with Eu. Moreover, the decay time of luminescence was decreased upon GNP content. This was explained by the moderation of negative charge in the GNP, leading to the repulsion with an electron in the excited Eu2+. [ABSTRACT FROM AUTHOR]

The influence of Mo on the electronic states and crystalline structure, as well as morphology, phase composition, luminescence, and defects in ZnO rods grown as free-standing nanoparticles, was studied using a variety of experimental techniques. Mo has almost no influence on the luminescence of the grown ZnO particles, whereas shallow donors are strongly affected in ZnO rods. Annealing in air causes exciton and defect-related bands to drop upon Mo doping level. The increase of the Mo doping level from 20 to 30% leads to the creation of dominating molybdates. This leads to a concomitant drop in the number of formed ZnO nanorods. [ABSTRACT FROM AUTHOR]

Erbium-doped Y3Al5O12 (YAG) single crystals grown using the micro-pulling-down technique were investigated. Three Er concentrations were chosen: 0.1, 0.3 and 1 at%. Er3+ electron paramagnetic resonance (EPR) spectra were measured in the ground and first excited states. The corresponding g tensors and 167Er hyperfine interaction were changing upon Er content indicating moderation of the Er-O bond length and/or Er local surrounding. Photoluminescence (PL) and radioluminescence (RL) spectra were complex, consisting of strongly overlapped typical Er3+ transitions. In addition, there were other broad PL band (3.1 eV) and RL band (3.95 eV) attributed to the F+ center and yttrium substituting for aluminum (YAl), respectively. The X-ray excited decay kinetics exhibited a decrease of the decay time of the YAl from hundreds of nanoseconds to nanoseconds upon Er doping level. This is discussed and explained considering EPR data. [ABSTRACT FROM AUTHOR]

Nanorods of erbium-doped zinc oxide (ZnO:Er) were fabricated using a hydrothermal method. One batch was prepared with and another one without constant ultraviolet (UV) irradiation applied during the growth. The nanorods were free-standing (FS) as well as deposited onto a fused silica glass substrate (GS). The goal was to study the atomistic aspects influencing the charge transport of ZnO nanoparticles, especially considering the differences between the FS and GS samples. We focused on the excitons; the intrinsic defects, such as zinc interstitials, zinc vacancies, and related shallow donors; and the conduction electrons. UV irradiation was applied for the first time during the ZnO:Er nanorod growth. This led to almost total exciton and zinc vacancy luminescence reduction, and the number of shallow donors was strongly suppressed in the GS samples. The effect was much less pronounced in the FS rods. Moreover, the exciton emission remained unchanged there. At the same time, the Er3+ content was decreased in the FS particles grown under constant UV irradiation while Er3+ was not detected in the GS particles at all. These phenomena are explained. [ABSTRACT FROM AUTHOR]

Plasma provides specific adjustment of solid‐state surface properties offering an alternative to high temperature treatment. Herein, hydrogen plasma treatment of monocrystalline (0001) ZnO surface is studied in an inductively coupled plasma reactor with reduced capacitively coupled plasma mode. The crucial role of electrical grounding of the sample holder for plasma etching and related changes in the morphology, optical, and electrical properties of surfaces exposed to electron and ion bombardment are explained. The effects on the chemical composition of the surface are analyzed by X‐ray photoelectron spectroscopy (XPS), optical properties by photoluminescence spectroscopy, topography, roughness, and surface measurements by atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). All methods show altered ZnO surface properties before and after plasma treatment strongly depending on the electrical potential of the holder. [ABSTRACT FROM AUTHOR]

Low‐dimensional organic–inorganic hybrids have emerged as promising X‐ray scintillators due to efficient radioluminescence properties. Herein, stable and efficient X‐ray scintillator based on 0D (C40H38P2)MnBr4 hybrid single crystals grown by a facile solution‐processing method is reported. Its crystal structure is determined to be triclinic with P1¯ space group. It has good stability against moisture and irradiation. (C40H38P2)MnBr4 with tetrahedrally coordinated Mn2+ exhibits green emission peaking at 518 nm originating from d–d 4T1→6A1 transition of Mn2+ ion with a high photoluminescence quantum yield (PLQY) of 74.2%. Under X‐ray excitation, it shows high scintillation yield of 32 000 photons MeV−1, a decent detection limit of 288 nGyair s−1, and a low afterglow comparable to that of Bi4Ge3O12 (BGO). [ABSTRACT FROM AUTHOR]

The glass‐ceramics (GC) of gadolinium aluminum gallium garnets with the expected composition of Gd3Al3Ga2O12:Ce and Gd3Al3Ga2O12:Ce,Be (GAGG:Ce and GAGG:Ce,Be, respectively) are fabricated by crystallization from the Gd2O3–Al2O3–Ga2O3–CeO2–SiO2–BeO (Gd:Ga:Al ratio is close to 3:2:3) glasses. The influence of Be2+ co‐doping (including doping level) on the luminescent properties of the GAGG is demonstrated. In particular, Be co‐doping results in the suppression of the Ce3+‐related radioluminescence (RL) and as a consequence, the light yield is lowered as well. The conclusion is made that Be2+ creates effective electron or hole trapping centers. [ABSTRACT FROM AUTHOR]

A comparative study of structural, optical properties of plasma‐treated Ga‐doped ZnO nanorods (GZO NRs) prepared by hydrothermal growth is presented, which provides an economical technology for fast production. Annealing in air followed by plasma treatment has been found to be an effective way of purification of ZnO NRs. The plasma hydrogenation and oxidation are done at room temperature in an inductively coupled plasma (ICP) reactor. The properties of plasma‐treated GZO NRs are investigated using various characterization methods, such as scanning electron microscopy (SEM), Raman, Fourier transform infrared (FTIR), X‐ray photoelectron spectroscopy (XPS), X‐ray diffraction (XRD), and electron paramagnetic resonance (EPR) spectroscopy. The SEM confirms the hexagonal shape of all GZO NRs. XPS reveals the presence of metallic Ga as well as Ga2O3 on GZO NRs surface. XRD has detected hexagonal (P63mc) ZnO phase in all samples with additional diffraction pattern in powder that has not been plasma treated. Plasma treatment does not affect the position of FTIR signals but changes the intensity of some absorption peaks. EPR shows a dominant signal with a g‐factor of 1.96. Plasma treatment of GZO samples affects its intensity. [ABSTRACT FROM AUTHOR]

Cs2HfCl6 (CHC) and Cs2ZrCl6 (CZC) single crystals were grown by a vertical Bridgman method. Luminescence and charge trapping properties were studied in CHC crystals by the correlated measurements of electron paramagnetic resonance (EPR), radioluminescence (RL) and thermally stimulated luminescence (TSL) techniques. CZC crystals were studied by the same set of measurements in order to find correlations between CHC and CZC crystals. EPR spectra measured before and after X-ray irradiation in both CHC and CZC samples were attributed with the typical signals of the Vk(a) hole trapping center (Cl2− pseudomolecular ion), which has recently been reported though the magnitude of the signal was much smaller in the CZC crystal. Besides the Vk(a) signal, another spectrum was observed in both samples; however, its intensity was at a very low level. It has been tentatively ascribed to the complex HCl-related hole trapping center. TSL glow curves measured in both CHC and CZC samples within the 10–500 K temperature range were composed of 6–8 complex peaks. The dominating peak at about 100–120 K originates from the de-trapping of holes at the Vk(a) trapping center. Scintillation characteristics of CHC crystal were studied over the temperature range of 9–295 K. Scintillation decay curves were fitted by three components. The CHC crystal demonstrated a much similar light yield of ca. 20 500 ph per MeV at room temperature and 9 K. The temperature dependence of the scintillation light output exhibits an unusual s-shaped character with the drop at around 100 K that correlates well with the decrease in the Vk(a) EPR signal, evidencing detrapping of holes trapped at the Vk(a) center in the CHC crystal. Therefore, the Vk(a) center was assumed to be the part of Hf3+–Cl2− self-trapped exciton (STE) that participates in the emission above 100 K becoming "frozen" below 100 K. RL and TSL spectra were complex in the CHC sample composed of two and three overlapping bands, respectively. One of the components peaking at 2.65 eV originated from the Zr-related STE. [ABSTRACT FROM AUTHOR]

Several sets of Eu-doped Y3Al5O12 (YAG) ceramic samples were synthesized by the vacuum sintering technique. Their structural, optical and magnetic properties were investigated by means of X-ray diffraction, X-ray fluorescence, optical absorption, time-resolved luminescence spectroscopy and electron paramagnetic resonance. Multiple annealing in different atmospheres was employed to understand the nature of strong specific absorption bands peaking at about 250, 370 and 550 nm in the case of these ceramics. The influence of sintering aids used during the preparation of ceramics (such as tetraethyl orthosilicate and/or magnesium oxide) on the optical properties is thoroughly studied. The charge transfer transition in the EuY2+ + F+ pair center is suggested to explain the nature of these absorption bands which is also supported by the peculiarities of the Eu2+ 5d–4f and F+/F luminescence occurrence. Application potential of the studied ceramics in the industrial implementation is discussed as well. [ABSTRACT FROM AUTHOR]

EPR spectroscopy in X- and Q-bands was employed to trace charge carrier trapping upon exposure to X-rays of LuPO4:Eu, LuPO4:Eu,Hf and YPO4:Eu,Hf flux-grown single crystals, as well as LuPO4:Eu sintered ceramics. These data were complemented with thermoluminescence (TL) studies on the same compositions. EPR spectra proved that all the single crystals contained Pb impurity incorporated from the flux. Upon exposure to X-rays the concentration of Pb3+ changed proving that Pb participated in carrier trapping. The ionizing radiation caused also partial conversion of Eu3+ into Eu2+ and in the (Eu,Hf) doubly doped crystals also Hf4+ was transformed into Hf3+ upon exposure to X-rays. In the LuPO4:Eu sintered ceramics X-rays transformed Eu3+ into Eu2+ and the strong EPR signal of a hole trapped at O2− in the vicinity of a defect (presumably Lu3+-vacancy) was recorded. Some contribution from the PO42− molecular ion could also be observed. However, in crystals the EPR signal from the latter was much more intense compared to the former. In ceramics, the trapped hole was found to hop between the O2− ions and only below ∼70 K it localized at just one of them. Complementary measurements of TL of the samples showed meaningful differences between the glow curves of the crystals and of the ceramics. The TL glow curve of the latter contained only one band peaking around 120 °C which is related to destruction of the trapped hole being mainly the O− center. All single crystals showed multi-peak TL glow curves covering the range of 30–500 °C. They were found to result mainly from a hole released from the PO42− molecular complex and to some extent also from the O− center. The results relative to EPR and TL spectroscopy proved that in orthophosphates Eu3+ is an effective electron trapping center while holes may be trapped at impurity ions, like Pb2+, or localized at oxygen ions possibly stabilized by nearby defects, e.g. Lu-vacancies. [ABSTRACT FROM AUTHOR]

The role and effect of stable Ce^4+ centers in Ce-doped LuAG single crystal scintillator is further studied by means of measurements of several optical, luminescence and scintillation characteristics. Two LuAG:Ce single crystal samples are compared: in one of them the dominating Ce^4 + center is stabilized by high concentration Mg^2+ codoping while the other one shows only the presence of stable Ce^3 + center. Tailored (Eu, Mg)–doped LuAG single crystal is also prepared to test the presence and thermal stability of hole traps in the host which affect the timing characteristics of Ce^4+ scintillation cycle, namely its restoration back to 4+ charge state in last step of the cycle. EPR experiment was also employed at Mg- and (Eu, Mg) doped LuAG samples and the signature of the O^ - hole center stabilized by Mg^2 + ion was clearly obtained. [ABSTRACT FROM AUTHOR]

Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y) are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED) lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8-800 K). Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed. [ABSTRACT FROM AUTHOR]

[Display omitted] • Electron and hole trapping centers were observed in the molybdenum doped zinc oxide rods. • Electron trapping centers were mostly molybdenum-based. • Holes were trapped at oxygen complexes. • Exciton- and defect-related emission bands appear suppressed after X-ray irradiation. • Zinc vacancies participated in the charge trapping processes. Peculiarities of the point defects creation under X-ray irradiation and the influence of Mo doping in ZnO powders of nano- and microrods fabricated by the hydrothermal growth method (as-grown and annealed in air) were studied in detail. Correlated experiments of X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance, photo- and radioluminescence as well as thermally stimulated luminescence allowed us to trace the effect of the molybdenum inclusion on the phase purity of synthesized materials and the role of Mo in the creation of X-ray induced point defects. Oxygen-based hole trapping centers (most probably involving interstitial oxygen) as well as Mo5+-based electron trapping centers were observed and their thermal stabilities were studied. Some amount of the hole trapping centers seemed to be directly connected with the creation of Mo5+. Zinc vacancies and the Mo5+ centers up to some extent were assumed to act as recombination centers for the holes released from the hole trapping centers. The X-ray irradiation also affects the luminescence properties of the ZnO:Mo samples – the intensity of the luminescence bands in general becomes weaker. [ABSTRACT FROM AUTHOR]

KLuS 2 single crystal samples undoped and doped with a low (5 %) or high (38 %) concentration of trivalent thulium or ytterbium ions were synthesized in the form of thin hexagonal plates. The low phonon energy (∼ 220 cm−1) was confirmed using Raman spectroscopy. Samples were studied also by using optical absorption and emission as well as electron paramagnetic resonance spectroscopy and the observed spectral features are discussed. In particular, the 5 % Yb doped samples demonstrate homogeneous dopant distribution inside the material over the lutetium sites. No other signals either from potassium site or the exchange coupled ions were detected. For infrared transitions the luminescence kinetic was determined. Significantly broad infrared emission bands (at 1.4, 1.8 and 2.3 μm for Tm3+, 1 μm for Yb3+) and long decay times (e.g. 0.4 ms from 3H 4 to 19 ms from 3F 4 levels of Tm3+, 1.4 ms from 2F 5/2 level of Yb3+) make those materials perspective for future laser development. [ABSTRACT FROM AUTHOR]

A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge doping concentration in GaN layers has been observed and studied. The donor doping concentrations in the n-type GaN varied from 5 × 1016 cm−3 to 1.5 × 1019 cm−3 for undoped, Si-doped, and Ge-doped samples. Consequently, the fastest component of the photoluminescence (PL) decay time curve accelerated from 0.9 ms to 40.3 ns, and the mean decay time from 20 ms to 260 ns with increasing doping concentration. We have proposed an explanation based on a theoretical model of donor-acceptor pair transition (DAP) and electron-acceptor (e-A0) recombination at higher dopant concentrations, which is supported by several measurement techniques as room-temperature radioluminescence (RL), PL measurements or thermally stimulated luminescence (TSL). Last but not least, we have shown a change in the morphology of samples with the increasing dopant concentration, especially 3D columns formation with the high level of Si-doping and its influence on the light extraction from the GaN layer. The paper shows an uncommon way of dealing with slow unwanted YB, which detriment the GaN luminescence properties. • Si and Ge doping of GaN may cause a huge acceleration of yellow band luminescence. • Steady-state photoluminescence intensity remains almost unchanged. • Donor-acceptor and electron-acceptor pair transitions explain the luminescence processes. • Highly Si-doped GaN growths in 3D columns, whereas Ge-doped remains smooth. • The light extraction is influenced by the morphology change. [ABSTRACT FROM AUTHOR]

Cationic doping of ZnO nanorods has gained increased interest as it can lead to the production of materials with improved luminescent properties, electrical conductivity and stability. We report on various Mo-doped ZnO powders of nanorods synthesized by the hydrothermal growth method. Further annealing or/and cold hydrogen or oxygen plasma modification was applied. The atomic structure of the as-grown and plasma-modified rods was characterized by X-ray diffraction. To identify any possible changes in morphology, scanning electron microscopy was used. Paramagnetic point defects were investigated by electron paramagnetic resonance. In particular, two new types of defects were initiated by the plasma treatment. Their appearance was explained, and corresponding mechanisms were proposed. The changes in the luminescence and scintillation properties were characterized by photo- and radioluminescence, respectively. Charge trapping phenomena were studied by thermally stimulated luminescence. Cold plasma treatment influenced the luminescence properties of ZnO:Mo structures. The contact with hydrogen lead to an approximately threefold increase in intensity of the ultraviolet exciton-related band peaking at ~3.24 eV, whereas the red band attributed to zinc vacancies (~1.97 eV) was suppressed compared to the as-grown samples. The exciton- and defect-related emission subsided after the treatment in oxygen plasma.

Heat treatment is needed to increase the luminescence intensity of ZnO:Ga particles, but it comes at the cost of higher particle agglomeration. Higher agglomeration results in low transparency of scintillating powder when embedded in a matrix and constitutes one of the biggest disadvantages, besides low light yield and low stopping power, of ZnO:Ga powder. Limiting ZnO:Ga particle size is therefore a key step in order to prepare highly luminescent and transparent composites with prospects for optical applications. In this work, SiO 2 coating was successfully used to improve luminescence intensity or limitation of crystallite size growth during further annealing. Furthermore, ZnO:Ga and ZnO:Ga-SiO 2 core-shells were embedded in a polystyrene matrix., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Eu-doped ternary sulfides of general formula ALnS₂ (A = Na, K, Rb; Ln = La, Gd, Lu, Y) are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED) lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8-800 K). Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D 3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS₂ is proposed. Color model xy -coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.