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Gamma-ray detection and spectroscopy is the quantitative determination of their energy spectra, and is of critical value and critically important in diverse technological and scientific fields. Here we report an improved melt growth method for cesium lead bromide and a special detector design with asymmetrical metal electrode configuration that leads to a high performance at room temperature. As-grown centimeter-sized crystals possess extremely low impurity levels (below 10 p.p.m. for total 69 elements) and detectors achieve 3.9% energy resolution for 122 keV 57Co gamma-ray and 3.8% for 662 keV 137Cs gamma-ray. Cesium lead bromide is unique among all gamma-ray detection materials in that its hole transport properties are responsible for the high performance. The superior mobility-lifetime product for holes (1.34 × 10−3 cm2 V−1) derives mainly from the record long hole carrier lifetime (over 25 μs). The easily scalable crystal growth and high-energy resolution, highlight cesium lead bromide as an exceptional next generation material for room temperature radiation detection., Detection and spectroscopic measurements of gamma-ray used to rely on expensive materials such as CdZnTe crystals. Here He et al. develop a melt method to grow large size CsPbBr3 perovskite crystals and the devices achieve low cost, high energy resolving capabilities and stability.

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. TheMn concentration of the order of 1020cm3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.

The wide-band-gap semiconductor thallium gallium selenide (TlGaSe2) is promising for X-ray and γ-ray detection. In this study, the synthesis and crystal growth of semiconducting TlGaSe2 was accomplished using a stoichiometric combination of TlSe, Ga, and Se and a modified Bridgman method. These large detector-grade crystals can be synthesized and cut to dimensions appropriate for a detector. The crystals have mirror-like cleaved surfaces and are transparent red, in agreement with a band gap of 1.95 eV observed in absorption measurements. Single-crystal X-ray diffraction refinements confirm that TlGaSe2 crystallizes in the monoclinic C2/c space group with a layered crystal structure consisting of planes of GaSe4 corner-sharing tetrahedra connected by weak Tl–Se bonds. Electronic band structure calculations made using the full-potential linearized augmented plane wave method with the screened-exchange local density approximation, including spin orbit coupling, indicate the unusual characteristic of the hole...

The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy (TEM) based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film with x = 0.01 and a Curie temperature of 330 K exhibited a homogeneous distribution of Mn. High Mn concentration films with x = 0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s)., In press in J. Crystal Growth

An analysis of the dynamic dielectric and electro-optic relaxation response of thin film ferroelectrics is presented. The analysis is based upon the relaxation of ferroelectric domains with a continuous distribution of sizes given by percolation theory. The resulting temporal response is described by the expression (t^-m) exp(-(t/tau)^beta). The analysis was applied to KNbO3 thin films. Measurements of the polarization, birefringence and dielectric transients show qualitative agreement with the model over 11 orders of magnitude in time., 19 pages, 4 figures, single column, accepted for publication in PRB

InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a T c of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T 1 of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.