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This manuscript is about the electric output of the silicon (Si) photovoltaic (PV) cell versus the electromagnetic field of a radio wave and a monochromatic illumination in three-dimensional (3D) assumptions. The polarisation direction of the electromagnetic wave and power density are fixed. The electromagnetic wave is provided by electromagnetic emission sources such as the telecommunication, radio, or TV antennas. A PV system is installed in the vicinity of an electromagnetic emission source. The current produced by the PV cell is sensitive to electromagnetic field increase more than the electric voltage. The electromagnetic field causes the decomposition of the current into two components which are a transferred current and a leakage current. The transferred component provides the transmitted current to the external load while the leakage component gives the loss of the carrier charge into the junction. Consequently, this decomposition of the current shares the electric power in transferred electric power and leakage electric power. The transferred electric power is obtained only in the intermediate circuit, and the maximum power point (MPP) shifts to the short circuit situation as the junction dynamic velocity becomes the greatest. However, the leakage electric power corresponds to a loss of the minority carrier’s charge in the junction during the crossing of the junction. This loss causes a Joule heating effect of the junction. The heating of the junction causes the quality degradation of the PV cell mainly due to the electric component. The solar illumination wavelength is presenting the inversion phenomenon with the maximum of the electrical outputs of the silicon PV cell of around 0.70 μm which provides the greatest conversion efficiency. This value has been chosen for the modelling of the radio wave influence. Hence, the conversion efficiency increases when the PV system is far away from the electromagnetic emission source. PV system installation in the vicinity of an electromagnetic emission source is not advised.

The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the effect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the effect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these effects. In our study, we explain fundamentally the causes of the effects of the irradiation on the solar cells. Taking into account the empirical formula of diffusion length under the effect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then influence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion efficiency). It appears also in this study that, at low fluence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell. [ABSTRACT FROM AUTHOR]