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We describe the development of a waveguide Fourier-transform spectrometer for space-borne high-resolution sensing. A prototype device is designed to monitor the water vapor absorption band near 1,364 nm with a resolution of 0.05 nm. It has no moving parts and is based on a unique concept of arrayed interferometers implemented in silicon-on-insulator planar waveguide chip. The optical input is formed by many independent waveguides, providing a significantly increased light gathering capability (etendue) compared to single-waveguide input configurations. Enhancements of the spectrometer capabilities are achieved by stacking planar waveguide layers and by using surface gratings to couple light into the waveguides.

We demonstrate a new microphotonic waveguide principle based on subwavelength gratings. We also present several practical implementations of subwavelength waveguides, including a microphotonic fiber-chip coupler with a coupling loss as small as -0.3 dB, a waveguide crossover with an excess loss of 0.02dB/crossing and a PDL of, 7th IEEE International Conference on Group IV Photonics (GFP), September 1-3, 2010, Beijing, China

The use of grating couplers in high index contrast waveguides like silicon on insulator (SOI) offers several advantages over other coupling approaches, including better alignment tolerances and allowing for wafer-scale testing. The grating couplers were developed for nanometric SOI waveguides (Si-wires), and recently also for micrometric rib waveguides. In this paper we review our work in fiber-to-chip grating couplers for thick SOI rib waveguides, where a coupling efficiency of −2.2 dB was demonstrated experimentally. We also discuss the use of grating couplers to improve optical throughput (etendue) of a planar waveguide Fourier-Transform (FT) spectrometer implemented in thick rib waveguides.

We present a method of engineering the waveguide core refractive index locally on a silicon photonic chip using subwavelength gratings. Applications such as efficient waveguide crossings, fiber-chip couplers and multiplexer circuits are discussed., The 2011 Photonics Society Winter Topicals, Keystone, Colorado, January 10-12, 2011

We use subwavelength gratings (SWGs) to engineer the refractive index in microphotonic waveguides, including practical components such as input couplers and multiplexer circuits. This technique allows for direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6-3.5 by lithographic patterning. We demonstrate two experimental examples of refractive index engineering, namely, a microphotonic fiber-chip coupler with a coupling loss as small as -0.9dB and minimal wavelength dependence and a planar waveguide multiplexer with SWG nanostructure, which acts as a slab waveguide for light diffracted by the grating, while at the same time acting as a lateral cladding for the strip waveguide. This yields an operation bandwidth of 170nm for a device size of only approximately 160microm x100microm.

The LOCOS technique for formation of SOI optical waveguides has been extended to produce low-loss photonic wire channel waveguides with deep submicron dimensions using a very simple process. © 2011 IEEE., 8th IEEE International Conference on Group IV Photonics, GFP 2011, 14 September 2011 through 16 September 2011, London

As a result of the evolution semiconductor fabrication tools and methods over several decades, it now possible to routinely design and make optical devices with features comparable to or smaller than the wavelength of the light that propagates through these structures. This paper will review some silicon optical structures with critical features at these extremely short length scales. For example it becomes possible to create segmented waveguide structures with optical properties that can be tuned continuously between those of the cladding and waveguide core, using lithographic patterning rather than varying etch depth. Using thin high index contrast waveguides and the correct polarization, the optical electric field profiles can be shaped to maximize the coupling to molecular monolayers or cladding layers with specific functionality. Examples are given from our recent work on optical biosensors chips which employ grating couplers made by sub-wavelength digital patterning, and use waveguides optimized for coupling to molecular monolayers., Silicon Photonics VI, January 23-26, 2011, San Francisco, CA, USA, Series: Proceedings of SPIE; no. 7943

We discuss several applications of both resonant and non-resonant subwavelength gratings (SWGs) for silicon photonics. We present results of evanescent field molecular sensing using the transverse magnetic mode of a 0.22 mm thick silicon slab waveguide with a resonant SWG, which couples a free space laser beam to the silicon waveguide mode. The optical readout of this configuration is almost identical to the established surface plasmon resonance sensing technology. Using calibrated sucrose solutions, we demonstrate a bulk refractive index sensitivity of 111 nm/RIU in good agreement with rigorous coupled wave analysis calculations. The binding of a monolayer of streptavidin protein on the waveguide surface is monitored in real time with a signal-to-noise ratio of ~500. In another application, non-resonant SWGs are used to create effective dielectric media with a refractive index that can be tuned between the values of silicon (3.48) and SU-8 polymer used for the cladding (1.58). For example, we present SWG waveguides with an effective core index of approximately 2.65, which exhibit lower propagation loss than photonic wire waveguides of similar dimensions. We use these SWG waveguides to demonstrate highly efficient fiber-chip couplers., Silicon Photonics V, January 24-27, 2010, San Francisco, California, USA, Series: SPIE Proceedings

The six-port reflectometer technique enables simple and accurate measurement of optical reflection coefficients in both magnitude and phase. The reflection coefficient is computed from four power measurements of linear combinations of the waves incident and reflected from the device under test. While the six-port technique is very successful at microwave frequencies and conceptually related to coherent optical phase diversity receivers, no optical implementations have been reported so far. In this paper, we present an experimental characterization of an optical six-port reflectometer composed of three multimode interference couplers, fabricated with a single etch step in silicon on insulator. Measurements are performed using a novel technique with a simple setup. The six-port combines the incident and reflected waves with magnitude and phase errors less than plusmn0.5 dB and plusmn6deg in the 1485-1575 nm band.

Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States, Series: Proceedings of SPIE; no. 6477

We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mum in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.

The spectral characteristics of a ring resonator made of Si photonic wires are modeled using mode expansion of supermodes of the directional coupler. The influence of the coupling coefficient, loss factor and waveguide dispersion on the spectral features are analyzed in detail. The model is then compared with the experimental data of a ring resonator designed for sensing purposes. The model that includes a wavelength dependence on coupling length reproduces the large variations of the envelope of the experimental spectrum, when coupling coefficient cover its full range from 0 to 1. Fitting parameters explain the details of the experimental spectrum and contribute to the sensor optimization, as well as illustrating general guidelines for ring resonator design.

We present theoretical and experimental results on an interference effect caused by boundary reflections on the optical scattering loss in high-index-contrast planar waveguides. Analytical expressions for the polarization-dependent scattering loss are derived using a surface Green's function. For high-index-contrast waveguides of submicrometer dimensions a significant deviation from accepted theory arises, including scattering loss suppression owing to a thin-film interference effect. Our theoretical predictions are confirmed by loss measurements on silicon-on-insulator channel waveguides.

Group-index birefringence in silicon-on-insulator photonic wire waveguides is determined through a polarization beating technique and a Fabry-Perot resonance method. A large group-index birefringence, up to 0.67, is obtained as a result of the structural asymmetry and high field confinement of our waveguides. The group index and linear propagation loss are also determined. In particular, the group index is found to be as large as 4.45 due to the significant change in the effective mode index of the waveguide as a function of the wavelength. The effects of structure size on the measured losses and group indices are analyzed. Our experimental results are in good agreement with our simulations, and the method employed is found to be effective in analyzing the linear properties of submicrometer optical waveguide structures.

We describe a novel non-destructive technique to measure the sidewall roughness induced scattering loss of SOI ridge waveguides using an integrated 5x17 star coupler. The accuracy of our technique is independent of the coupling efficiency. In our technique, we capture the near field images of the full output waveguides array with varying width ranging from 0.2 to 2.0 micron and use the intensity maps of these images to produce normalized intensity profiles, from which the relative scattering losses of output waveguides are extracted. Using our technique, we have studied and compared the scattering and polarization dependent losses of three different sets of SOI waveguide samples fabricated by different processes. We have determined the root-mean-square roughness and autocorrelation length of these samples using scanning electron microscopy (SEM). Relating the loss and roughness analysis, we have showed that the process utilizing negative e-beam photoresist and Cr-hardmask with inductively coupled plasma (ICP) etching produced the smoothest waveguide sidewalls and lowest scattering losses. We have also successfully modeled the measured ridge waveguide losses as a function of waveguide width and demonstrated that the theoretical sidewall roughness is in reasonable agreement with the measured roughness from SEM. Our technique is capable of studying roughness induced scattering loss and thus provides an efficient way of optimizing and monitoring process parameters that affect sidewall roughness., SPIE Photonics West Conference: Silicon Photonics II :Feb 2007, Series: Proceedings of SPIE; no. 6477

The design, simulation, and experimental performance of mode converters for coupling from single-mode silicon-on-insulator ridge waveguides to high aspect ratio channel waveguides are described. The converters consist of a two-level adiabatic taper structure. The final channel waveguide is 1.5 mum high by 0.8 mum wide. Simulations predict that for total coupler lengths longer than 20 mum, the coupling loss from the fundamental ridge mode to the slit mode is better than -0.2 dB. The couplers and waveguides were fabricated using a two-step self-aligned process. The measured coupling loss for fabricated mode converters is -0.4 dB

A new diffractive device for light coupling between a planar optical waveguide and free space is proposed. The device utilizes a second-order waveguide grating to diffract the fundamental waveguide mode into two free propagating beams and a subwavelength grating (SWG) mirror to combine the two free propagating beams into a single beam. The finite-difference time-domain (FDTD) simulations show that the SWG mirror improves the coupling efficiency of the waveguide fundamental mode into the single out-coupled beam from about 30% to 92%. A high efficiency (>90%) is predicted for a broad wavelength range of 1520-1580nm. The proposed device is compact (/spl sim/80 /spl mu/m in length) and it eliminates the need for blazing the waveguide grating.

We demonstrate a new, highly sensitive evanescent field sensor using silicon-on-insulator (SOI) photonic wire waveguides. Theoretical analysis shows that thin SOI waveguides can provide higher sensitivity over devices based in all other common planar waveguide material systems for the probing of both thin adsorbed biomolecular layers and bulk homogeneous solutions. A Si photonic wire waveguide was incorporated into a Mach-Zehnder interferometer based sensor, configured to monitor the index change of a homogeneous solution. High effective index change of 0.31 per refractive index unit (RIU) change of the solution was measured, confirming theoretical predictions

Emerging optical waveguide spectrometers, sensors, and biochips require the simultaneous acquisition of numerous optical signals. Aligning many tens or hundreds of optical fibers to waveguides is a formidable and costly exercise in packaging. We propose a data acquisition scheme using arrays of micromirrors to redirect light propagating in each waveguide out of the device surface, where all the beams can be collected by a single imaging array. Micromirrors, which are the key elements in this data acquisition scheme, were fabricated in 2μm thick silicon-on-insulator waveguides. Chemically assisted ion beam etching (CAIBE) was used to obtain inclined mirror facets, benefiting from the unique capability of CAIBE to tilt the sample relative to the ion beam. Finite difference time domain (FDTD) simulations of an ideal micromirror oriented at 45° to the propagation direction predict a >96% out-coupling efficiency (loss of 0.14dB) and a negligible polarization dependent loss (PDL). The measured total insertion l...

Photonics Asia, 2004, Beijing, China, Series: Proceedings of SPIE; 5644

We demonstrate that stress engineering is an effective tool to modify or eliminate polarization dispersion in silicon-on-insulator (SOI) waveguide devices, for a wide range of waveguide cross-section shapes and dimensions. The stress-induced effects on the modal birefringence of SOI waveguides are investigated numerically and experimentally. Finite-element simulations show that while the birefringence of ridge waveguides with both slanted and vertical sidewalls can be effectively modified using cladding stress, the birefringence becomes much less sensitive to dimension fluctuations with decreasing sidewall slope. To efficiently simulate the stress-induced effects we propose a normalized plane-strain model which can achieve comparable accuracy as a fully generalized plane-strain model but requires significantly less computational resources. Excellent agreement is achieved between the calculated and measured birefringence tuning using SiO/sub 2/ cladding induced stress. Finally, both calculations and experiments confirm that cladding induced stress can be used to eliminate the birefringence in SOI waveguides of arbitrary shapes, for typical SiO/sub 2/ film stress values (/spl sigma//sub film//spl ap/-100 to -300 MPa) and cladding thicknesses of the order of 1 /spl mu/m or less.

We propose and demonstrate the use of the cladding stress-induced photoelastic effect to eliminate modal birefringence in silicon-on-insulator (SOI) ridge waveguides. Birefringence-free operation was achieved for waveguides with otherwise large birefringence by use of properly chosen thickness and stress of the upper cladding layer. With the stress levels typically found in cladding materials such as SiO2, the birefringence modification range can be as large as 10(-3). In arrayed waveguide grating demultiplexers that were fabricated in a SOI platform, we demonstrated the reduction of the birefringence from 1.2 x 10(-3) (without the upper cladding) to 4.5 x 10(-5) when a 0.8-microm oxide upper cladding with a stress of -320 MPa (compressive) was used. Because the index changes induced by the stress are orders of magnitude smaller than the waveguide core-cladding index contrast, the associated mode mismatch loss is negligible.