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In many cases, nobody consider any kinetic equation where the collision integral does not use clearly the values of external electric and magnetic fields. But there is some reason to use in the collision integral the above fields and to consider the ratio of the averaged deBroglie wavelength to the free-path length. [ABSTRACT FROM AUTHOR]

Consideration of different problems of physical kinetics shows that non-equilibrium distribution function of band carriers and, consequently, kinetic coefficients significantly depend on the specific shape of bands and mutual interaction of carriers. The most impressive results are related with interband scattering of mobile particles belonging to many-valley systems. Especially essential process of e-e-interaction is peculiar for the so-called half-metals (wolfram, bismuth, molibden, indium and many others). [ABSTRACT FROM AUTHOR]

Consideration of different problems of physical kinetics shows that nonequilibrium distribution function of band carriers and, consequently, kinetic coefficients significantly depend on the specific shape of bands and mutual interaction of carriers. The most impressive results are related with interband scattering of mobile particles belonging to many-valley systems. [ABSTRACT FROM AUTHOR]

Consideration of different problems of physical kinetics shows that obtained non-equilibrium distribution function and following kinetic coefficients calculated are significantly dependent on choice of approach to approximate solution of kinetic equation. Therefore, in real practice any separate popular way of solution cannot be confidently considered as a reliable result. Here, several approaches are used, and the obtained different distribution functions and mobility have been compared. [ABSTRACT FROM AUTHOR]

The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that for the case considered here they depend evidently on the ratio of average deBroighle wavelength and free-path length. Just here, the real possibility appears to reasonably separate physical kinetics by the classic and non-classic (quantum) ones. [ABSTRACT FROM AUTHOR]

Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. [ABSTRACT FROM AUTHOR]

Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility at high concentrations of carriers, which belong to different groups and have different drift velocities. In bilayer system the mutual drag can even change the direction of partial current. Magnetoresistivity and Hall effect were theoretically investigated for neutral and gated graphene. It is shown that for spatially unlimited neutral graphene Hall effect is totally absent. In gated, exactly monopolar graphene for the same case effect of magnetoresistivity vanishes; here the Hall constant does not involve any relaxation characteristic in contrast to results obtained for the popular method of t-approximation. It is shown that limited sizes of crystal with monopolar conductivity can be cause for impressive dependence of the Hall constant and magnetoresistivity on the value of external magnetic field. [ABSTRACT FROM AUTHOR]

Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient influence on both effects. [ABSTRACT FROM AUTHOR]

Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls. [ABSTRACT FROM AUTHOR]

Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently changes both effects. Calculated here values substantially differ from consequent those obtained on the base of popular τ-approximation. [ABSTRACT FROM AUTHOR]

Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon. [ABSTRACT FROM AUTHOR]

The Seebeck coefficient α and Hall constant RH are calculated for monopolar crystal as based of quantum kinetic equation. It is shown that α and RH in the case of simple isotropic band do not depend on relaxation characteristics in contrast to the result obtained for the same crystals by calculations founded on relaxation time approximation. [ABSTRACT FROM AUTHOR]

Dispersion law is studied for high-frequency longitudinal plasma waves in 2DEG (the plane z = 0), separated by thin dielectric layer from half-limited 3DEG. It is shown that drift of 3DEG provokes for special conditions instability of considered plasma waves. [ABSTRACT FROM AUTHOR]