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2 results on '"Benoit Martel"'

1. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

Author

Hélène Lignier, Benoit Martel, Maxim Hayes, Etienne Pihan, Giri Wahyu Alam, Sébastien Dubois, Olivier Palais, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Phosphorus doped, Getter, Impurity, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], business.industry, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

International audience

Published
2019

2. Contacting n$^+$ poly-Si junctions with fired AZO layers: a promising approach for high temperature passivated contact solar cells

Author

Sébastien Dubois, Elise Bruhat, D. Blanc-Pélissier, Thibaut Desrues, Raphaël Cabal, Benoit Martel, Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE05-0035,SunSTONE,Réseaux de chaleur solaires intelligents avec stockage intersaisonnier(2017), and European Project: 727529,DISC

Subjects
010302 applied physics, Materials science, Silicon, Passivation, Open-circuit voltage, Annealing (metallurgy), business.industry, Energy conversion efficiency, chemistry.chemical_element, 02 engineering and technology, Conductivity, 021001 nanoscience & nanotechnology, 01 natural sciences, Aluminum Zinc Oxide, chemistry, passivating contacts, Electrical resistivity and conductivity, silicon solar cells, 0103 physical sciences, Optoelectronics, Homojunction, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, thermal treatment
Abstract

International audience; Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. However, the use of Transparent Conductive Oxides (TCO) has to be considered to improve lateral conductivity while maintaining good optical and surface passivation properties especially for bifacial devices. In this work different Aluminum-doped Zinc Oxide (AZO) based layers have been investigated after high temperature firing steps to contact Phosphorus-doped poly-Si layers. Contact resistivity below 100 mΩ.cm$^2$ at the AZO/n$^+$ poly-Si interface and stable implied open circuit voltage values (> 715 mV) have been obtained for firing temperatures from 550°C to 900°C. Moreover, the use of capping layers allows to maintain highly conductive AZO layers upon annealing. This novel high temperature contacting method via indium-free TCOs, is particularly interesting for the industrial integration of poly-Si based passivated contacts and provides new perspectives for advanced homojunction solar cells.

Published
2019

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