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11 results on '"Arie Ruzin"'

1. EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Author

Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, and Ulyana Shimanovich

Subjects
Physics, QC1-999
Abstract

Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.

Published
2024
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2. Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Author

Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, and Arie Ruzin

Subjects
Physics, QC1-999
Abstract

It has recently been demonstrated that electron beam injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length with injection duration, followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) at meta-stable native defect levels in the material, which in turn blocks recombination through these levels. In this work, in contrast to previous studies, the effect of electron injection in p-type Ga2O3 was investigated using cathodoluminescence technique in situ in scanning electron microscope, thus providing insight into minority carrier lifetime behavior under electron beam irradiation. The activation energy of ∼0.3 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.

Published
2024
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3. Influence of Energetic Particles and Electron Injection on Minority Carrier Transport Properties in Gallium Oxide

Author

Sushrut Modak, Arie Ruzin, Alfons Schulte, and Leonid Chernyak

Subjects
gallium oxide, transport properties, minority carriers, Physics, QC1-999
Abstract

The influence of various energetic particles and electron injection on the transport of minority carriers and non-equilibrium carrier recombination in Ga2O3 is summarized in this review. In Ga2O3 semiconductors, if robust p-type material and bipolar structures become available, the diffusion lengths of minority carriers will be of critical significance. The diffusion length of minority carriers dictates the functionality of electronic devices such as diodes, transistors, and detectors. One of the problems in ultrawide-bandgap materials technology is the short carrier diffusion length caused by the scattering on extended defects. Electron injection in n- and p-type gallium oxide results in a significant increase in the diffusion length, even after its deterioration, due to exposure to alpha and proton irradiation. Furthermore, post electron injection, the diffusion length of an irradiated material exceeds that of Ga2O3 prior to irradiation and injection. The root cause of the electron injection-induced effect is attributed to the increase in the minority carrier lifetime in the material due to the trapping of non-equilibrium electrons on native point defects. It is therefore concluded that electron injection is capable of “healing” the adverse impact of radiation in Ga2O3 and can be used for the control of minority carrier transport and, therefore, device performance.

Published
2024
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4. Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

Author

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Corinne Sartel, Vincent Sallet, Yves Dumont, Ekaterine Chikoidze, Xinyi Xia, Fan Ren, Stephen J. Pearton, Arie Ruzin, Denis M. Zhigunov, Sergey S. Kosolobov, and Vladimir P. Drachev

Subjects
Biotechnology, TP248.13-248.65, Physics, QC1-999
Abstract

Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.

Published
2022
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5. Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3

Author

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Arie Ruzin, Sergey S. Kosolobov, and Vladimir P. Drachev

Subjects
Physics, QC1-999
Abstract

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

Published
2021
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6. Silicon detectors for the sLHC

Author

S. Charron, Lucian Pintilie, J. Miyamoto, Donato Creanza, Miguel Ullan, Ian Shipsey, Julien Mekki, S. Diez, Esa Tuovinen, V. Khivrich, C. Betancourt, Val O'Shea, V. K. Eremin, N. Samadashvili, M. Zavrtanik, C. Cristobal, P. Kaminski, Ettore Focardi, Michael Solar, Marcela Mikestikova, Yu. V. Tubol’tsev, Andrea Candelori, D. Bassignana, J. Zelazko, E. Cortina Gil, S. Korjenevski, Nicola Pacifico, Simon Kwan, Ralf P. Richter, N. Manna, Kati Lassila-Perini, J. Popule, Konstantin Toms, Maurizio Boscardin, D. Stolze, Suchandra Dutta, Anna Macchiolo, B. Sopko, Jaakko Härkönen, Francesco Fiori, Alexander Grillo, M. Miñano, M. H. Genest, A. Naletko, Teppo Mäenpää, Martin Hoeferkamp, Els Koffeman, A. Kharchuk, Fred Hartjes, M. Beimforde, A. A. Affolder, Leonid Makarenko, A. Zaluzhny, H. G. Moser, I. Wilhelm, Arūnas Kadys, M. Zen, Andrej Yu. Kuznetsov, A. Tsvetkov, A. Bates, C. Dragoi, Gianluigi Casse, Panja-Riina Luukka, Thor-Erik Hansen, M. Mikuž, G. Lefeuvre, M. Breindl, A. Borgia, M. Frey, S. Kühn, Roland Horisberger, Alexander Dierlamm, S. Son, A. Roy, V. Sopko, D. Forshaw, M. Walz, Regina Demina, R. Kozlowski, Monica Scaringella, Vladimir Cindro, Ionel Lazanu, Richard Bates, K. Giolo, Jacopo Bernardini, E. Monokhov, V. Kazukauskas, Eija Tuominen, G. Steinbrueck, Graeme Stewart, P. Buhmann, Th. Pöhlsen, Petr Sicho, P. Gregori, J. Storasta, M. Lozano, Leonard Spiegel, V. Radicci, Valery Zhukov, Vaclav Vrba, M.J. Bosma, S. Rogozhkin, R. Wunstorf, A. Groza, Carlos Lacasta, L. A.M. Wiik, Gregor Kramberger, Krzysztof Piotrzkowski, Tilman Rohe, M. Pawlowski, Adrian Driewer, J.A. Kierstead, Carsten Rott, Richard Nisius, S. Marunko, Roxana Radu, Riccardo Rando, J. Sibille, Sally Seidel, J.M. Raf, T. Barber, S. Cihangir, Laura Borrello, A. Litovchenko, Marco Battaglia, J.P. Balbuena, G. Lindström, Ladislav Andricek, T. J. V. Bowcock, A. K. Srivastava, R. Roeder, C. Parkes, M. Matysek, Z. Kohout, U. Parzefall, E. Grigoriev, I. Eremin, K. Kaska, W. De Boer, Ilya Korolkov, M. van Beuzekom, Daniel Dobos, Daniele Passeri, Gino Bolla, Joachim Erfle, A. Macraighne, Dario Bisello, Heinz Pernegger, E. M. Verbitskaya, J. Bohm, Sorina Lazanu, Sabina Ronchin, A. Barcz, Nicola Zorzi, D. Pantano, A. Karpenko, Ping Tan, M. De Palma, I. Vila Alvarez, A. Houdayer, H. Uebersee, Arie Ruzin, Mara Bruzzi, Tuure Tuuva, Stanislav Pospisil, Eugenijus Gaubas, Sebastian Grinstein, J. Vaitkus, C. Goessling, J. Guskov, N. Spencer, Sergey Kuleshov, Reiner Klingenberg, Alberto Messineo, C. Gallrapp, Doris Eckstein, S. Sakalauskas, Andre Rummler, Daniela Bortoletto, C. Lebel, Vincent Lemaitre, P.G. Litovchenko, Manuel Fahrer, R. Marco, F. Doherty, M. Tomášek, Joost Vossebeld, Michael Moll, Igor Mandić, U. Soldevila-Serrano, I. Dolenc Kittelmann, Claude Leroy, N. Fadeeva, P. Weigell, Frank Hartmann, L. Polivtsev, D. Zontar, B. Surma, Marco Petasecca, Z. Li, G. Grégoire, R. Placekett, A. Aleev, Otilia Militaru, N. Kazuchits, Lars Eklund, Tomas Slavicek, M. Kozubal, P. Masek, Maurice Glaser, Andrew Blue, Bengt Gunnar Svensson, R. Klanner, A. A. Golubev, Z. Luczynski, I. Ilyashenko, G. U. Pignatel, Eckhart Fretwurst, Carmen García, Jessica Metcalfe, C.A. Costinoaia, Keith Mathieson, Hartmut Sadrozinski, F. J. Munoz Sanchez, R. Roger, Craig Buttar, P. Collins, Dzmitry Maneuski, D. Hynds, A. La Rosa, Marina Artuso, D. Chren, J. S. Lange, G. F. Dalla Betta, L. Barabash, M. Tylchin, Claudio Piemonte, G. M. Bilei, C. Fleta, J. Broz, Francesca Campabadal, Abraham Seiden, A. Dolgolenko, Shota Tsiskaridze, J. Visser, M. Köhler, Phillip Allport, A. Brzozowski, Peter Kodys, Jens Preiss, Zdenek Dolezal, Bruce Schumm, Ioana Pintilie, Alexandra Junkes, Daniel Muenstermann, I. V. Gorelov, S. Marti i Garcia, V. Lastovetsky, R. Mori, Giulio Pellegrini, LHC (IHEF, IoP, FNWI), and UCL - SST/IRMP - Institut de recherche en mathématique et physique

Subjects
Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, LHC, High luminosity collider, radiation damage, Charge collection efficiency, chemistry.chemical_element, Tracking (particle physics), Nuclear physics, Radiation damage, Silicon particle detectors, Irradiation, Instrumentation, Radiation hardening, Physics, Luminosity (scattering theory), Large Hadron Collider, Detector, Semiconductor device, Engineering physics, chemistry, High Energy Physics::Experiment, Particle physics experiments
Abstract

In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. © 2011 Elsevier B.V.

Published
2011

7. Development of radiation tolerant semiconductor detectors for the Super-LHC

Author

Gino Bolla, B. S. Avset, Craig Buttar, Francesca Campabadal, V. K. Eremin, P. Zabierowski, Kati Lassila-Perini, P. Collins, Lucian Pintilie, Vladimír Linhart, Robert Stone, R. Jones, Sorina Lazanu, R. Coluccia, A. Roy, Vladimir Cindro, J. Guskov, M. Horn, D. Chren, R. Kozlowski, Ian Shipsey, V Kazlauskiene, M. Tylchin, G. M. Bilei, J. Broz, S. Sakalauskas, A. Chilingarov, A. Dolgolenko, R. Wunstorf, Monica Scaringella, J. E. Garcia-Navarro, David Menichelli, Esa Tuovinen, A. Popa, Alexander Ivanov, R. Klingenberga, Josef Uher, V. Wright, A. Al-Ajili, V. Radicci, Ionel Lazanu, Paul J. Sellin, Klaus Magnus H Johansen, J. Metcalfe, J. Vaitkus, A. N. Lebedev, Y. Yiuri, J. Klaiber-Lodewigs, C. Paolini, G. Segneri, Z. Luczynski, Carmen García, G.-F. Dalla Betta, O. Krasel, Valery Zhukov, C. Lebel, L. Jungermann, N. Manna, G.U. Pignatel, Gianluigi Casse, Eija Tuominen, Gregor Kramberger, Andrea Scorzoni, S. Marunko, C. Joram, R. Roeder, A Suvorov, A. Houdayer, S. Worm, J. Nysten, E. Forton, S. Marti i Garcia, G. Grégoire, A. Pozza, B. Surma, G. Sellberg, Andrew Blue, K. Petasecca, L. Perera, Simon Kwan, Martin Hoeferkamp, Z. Li, José Coutinho, F. Fizzotti, Nicola Zorzi, Bruce Schumm, Ioana Pintilie, K. Leinonen, Tuure Tuuva, Stanislav Pospisil, L. Bosisio, A. Macchiolo, T. Palvialnen, J Adey, V. Lastovetsky, Keith Mathieson, Tilman Rohe, T. J. Sloan, U. Pein, Alberto Messineo, Paul Tipton, M. De Palma, Maurice Glaser, Francesco Moscatelli, P. Dervan, C. Manfredotti, W. De Boer, G. Bondarenko, A. Barcz, Jonathan P. Goss, M Kozodaev, B.K. Jones, Eugenijus Gaubas, A. Seiden, P. Buhmann, J. Storasta, Phillip Allport, D. Sentenac, A. Brzozowski, P.G. Litovchenko, S. Dittongo, Sally Seidel, Günter Wagner, N. Spencer, Sabina Ronchin, M. Tomášek, H. Uebersee, S Assouak, Arie Ruzin, G. Latino, Steve Schnetzer, D. Campbell, T. J. V. Bowcock, A. Lo Giudice, P. Gregori, J. J. Melone, Riccardo Rando, Z. Kohout, V Golovine, S. G. Sevilla, Peter Kodys, A. V. Karpov, Zdenek Dolezal, Leonid Makarenko, Petr Sicho, A.T. Blumenau, Michael Moll, Claude Leroy, L. Polivtsev, A. Groza, K Jarasiunas, Carsten Rott, Benjamin Hourahine, Daniele Passeri, J. Kierstead, Mario Zen, Panja-Riina Luukka, Andrej Yu. Kuznetsov, E. Focardi, Joan Marc Rafi, D. Stolze, Daniela Bortoletto, V. Sopko, T. J. Brodbeck, M Sudzius, Anna Cavallini, I. V. Gorelov, Celeste Fleta, Karl Gill, Claus Goessling, Gareth M. Hughes, Hartmut Sadrozinski, V. Khivrich, MH Genest, Roland Horisberger, S. Son, W. R. Cunningham, J. Miyamoto, Regina Demina, L. Haddad, Maurizio Boscardin, A. G. Bates, Vaclav Vrba, Donato Creanza, Richard Bates, K. Giolo, Klaus Irmscher, I. Ilyashenko, Marko Mikuz, T. Horazdovsky, Miguel Ullan, D. Naoumov, Eckhart Fretwurst, E. Borchi, Devis Contarato, Marina Artuso, S.F. Biagi, A. Tsvetkov, C. Parkes, M. Zavrtanik, M. Koski, Dario Bisello, Giovanni Alfieri, V. Kazukauskas, P. Olivera, P. Kaminski, F. Hauler, E Kalinina, F. Fasolo, Stefano Lagomarsino, S. Korjenevski, Michael Solar, C. J. Fall, P Polozov, Luigi Schiavulli, L. Barabash, Giulio Pellegrini, Ian Dawson, Claudio Piemonte, M. Buda, T.A.G. Eberlein, N Strokan, Eduard Monakhov, V. Khomenkov, B. Sopko, S. Charron, V. Boisvert, E. M. Verbitskaya, B. G. Svensson, Val O'Shea, Mara Bruzzi, Andrea Candelori, Manuel Lozano, N. Pinho, I. Wilhelm, Jaakko Härkönen, G. Lindström, E. Grigoriev, Alexander Grillo, Silvio Sciortino, J.J. Velthuis, J. Stahl, Igor Mandić, Laura Borrello, S. Miglio, A. Litovchenko, J. Popule, A. Karpenko, E. Nossarzewska-Orlowska, A. Zaluzhny, and F. Hönniger

Subjects
Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, LHC, Radiation Detector, Semiconductor detectors, chemistry.chemical_element, radiation hardness, Defect engineering, 01 natural sciences, Particle detector, Super-LHC, Radiation damage, tracking system, silicon detectors, 0103 physical sciences, 010306 general physics, Instrumentation, Radiation hardening, Physics, Silicon particle detectors, SLHC, Large Hadron Collider, 010308 nuclear & particles physics, business.industry, Detector, Semiconductor device, Semiconductor detector, Upgrade, chemistry, Optoelectronics, High Energy Physics::Experiment, business
Abstract

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm-2 s-1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi- 3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.

Published
2005
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8. Radiation-hard semiconductor detectors for SuperLHC

Author

Phillip Allport, D. Sentenac, A. Brzozowski, Peter Kodys, A. V. Karpov, Zdenek Dolezal, Claus Goessling, M Sudzius, T. J. Brodbeck, F. Hauler, M. Tomášek, W. R. Cunningham, T. Lari, E Kalinina, S Assouak, J. Miyamoto, Donato Creanza, José Coutinho, J Adey, Miguel Ullan, F. Fizzotti, Nicola Zorzi, Eduard Monakhov, A. Roy, K. Leinonen, Mats Kleverman, Andrew Ivanov, V Kazlauskiene, Mauro Citterio, J. E. GarcíaNavarro, L.I. Murin, Gino Bolla, Daniela Bortoletto, P Zablerowski, Vladimir Cindro, Tuure Tuuva, Stanislav Pospisil, Clara Troncon, V Khivrich, Sorina Lazanu, A Mozzanti, S Franchenko, B. Sopko, Georg Pucker, N. Pinho, I. Wilhelm, R. Coluccia, G. M. Bilei, P. Buhmann, Marina Artuso, R. Wunstorf, Giulio Pellegrini, T.A.G. Eberlein, J. Broz, G. Lindström, Tilman Rohe, E. Grigoriev, Mara Bruzzi, J. Storasta, J.J. Velthuis, Jonathan P. Goss, Ian Shipsey, J. Guskov, Ian Dawson, Reiner Klingenberg, Lucian Pintilie, B.K. Jones, L. Perera, Simon Kwan, A Karpenko, T. Horazdovsky, V. Boisvert, B. G. Svensson, A Groza, E Baranova, M. Horn, S. Sakalauskas, W. De Boer, A. Chilingarov, V Golovine, Bruce Schumm, P. Vanni, Ioana Pintilie, J Suuronen, E. Borchi, V. Radicci, Val O'Shea, Manuel Lozano, A Litovchenko, L. Jungermann, G.U. Pignatel, Valery Zhukov, Gianluigi Casse, A. Seiden, Karl Gill, C. Parkes, Alexander Grillo, Silvio Sciortino, Eugenijus Gaubas, P. Gregori, Giovanni Verzellesi, Petr Sicho, J. Popule, P. Roy, Giovanni Alfieri, V. Khomenkov, U. Pein, Alberto Messineo, G. Bondarenko, Kati Lassila-Perini, Esa Tuovinen, J. J. Melone, R. Roeder, A Brukhanov, Eija Tuominen, SM Garcia, A. Zaluzhny, Roland Horisberger, S. Son, Dario Bisello, A Suvorov, Devis Contarato, Richard Bates, K. Giolo, Robert Stone, A.I. Ryazanov, R. Jones, A. Barcz, P Litovchenko, Thomas Ferbel, Gregor Kramberger, G. Grégoire, V Litvinov, Jaakko Härkönen, E. M. Verbitskaya, C. Paolini, A Kowalik, P. Kaminski, A. Houdayer, L.I. Barabash, G. Latino, S.F. Biagi, Andrea Scorzoni, L. Bosisio, Ettore Focardi, S. Marunko, C. Joram, Stefano Lagomarsino, Francesca Campabadal, L Polivtsev, Marko Mikuz, B Piatkowski, A. Popa, J. Stahl, F. Hönniger, F Gamaz, H. F.W. Sadrozinski, A. Macchiolo, L Dobrzanski, C. Lebel, I. Stavitski, G. Segneri, M. Zavrtanik, David Menichelli, Michael Solar, Alberto Francesco Basile, Filippo Nava, Z. Luczynski, Alison Mainwood, Carmen García, A Dolgolenko, Leonid Makarenko, Andrej Yu. Kuznetsov, G. Sellberg, P Alexandrov, Andrew Blue, Wlodek Strupinski, Steve Schnetzer, Alexander Dierlamm, M Kozodaev, Maurice Glaser, S. Korjenevski, B. S. Avset, Paul Tipton, M. De Palma, Francesco Moscatelli, A Gouldwell, V Lastovetsky, A. Tsvetkov, P. Dervan, S. Latushkin, Craig Buttar, P. Collins, Michael Moll, Laura Borrello, S. Miglio, Marco Petasecca, Vladimír Linhart, S. Worm, Shusaku Hayama, R Harding, J. Nysten, E. Forton, D. Chren, G.J. Wagner, SG Sevilla, Z. Li, Igor Mandić, O. Krasel, R. Demina, Claude Leroy, Lennart Lindström, Chiara Meroni, E. Nossarzewska-Orlowska, P Polozov, Luigi Schiavulli, Keith Mathieson, V Vrba, C. Grigson, C. Manfredotti, T. J. Sloan, C. J. Fall, M. Buda, A Hruban, Maurizio Boscardin, R. Kozlowski, Panja-Riina Luukka, Claudio Piemonte, T. J. V. Bowcock, Monica Scaringella, D. Campbell, N Strokan, Gareth M. Hughes, I. Ilyashenko, V Cvetkov, Eckhart Fretwurst, V. Kazukauskas, A. Lo Giudice, Joan Marc Rafi, F. Fasolo, Celeste Fleta, L. Haddad, Klaus Irmscher, K Jarasiunas, Carsten Rott, Benjamin Hourahine, S. Nummela, M. Rahman, Paolo Olivero, Daniele Passeri, G.-F. Dalla Betta, Gavin Davies, MH Genest, B. Surma, Martin Hoeferkamp, N. E. Belova, I. V. Gorelov, A. Al-Ajili, Paul J. Sellin, J. Vaitkus, T Jin, Ionel Lazanu, Francesco Ragusa, T Palviainen, Riccardo Rando, A. Andreazza, Z. Kohout, M. Tylchin, J. Kierstead, Mario Zen, V. K. Eremin, D. Stolze, A. Candelori, Anna Cavallini, Josef Uher, V. Wright, J. Klaiber-Lodewigs, B Blumenau, S. Dittongo, Sally Seidel, N. Spencer, Sabina Ronchin, H. Uebersee, Arie Ruzin, and D. Naoumov

Subjects
Nuclear and High Energy Physics, radiation hard semiconductors, Physics::Instrumentation and Detectors, Semiconductor detectors, Radiation Detector, LHC, radiation hardness, 01 natural sciences, Defect engineering, Super-LHC, Radiation damage, radiation detectors, silicon detectors, 0103 physical sciences, SuperLHC, Silicon detectors, RD50 collaboration, Instrumentation, Radiation hardening, Radiation hardness, 010302 applied physics, Physics, Silicon particle detectors, SLHC, Luminosity (scattering theory), Large Hadron Collider, Interaction point, 010308 nuclear & particles physics, business.industry, Detector, Semiconductor device, Semiconductor detector, Optoelectronics, High Energy Physics::Experiment, business
Abstract

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.

Published
2005
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9. Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration

Author

Eicke R. Weber, A. Vasilescu, Lucian Pintilie, Stephen Watts, Donato Creanza, Vladimír Linhart, Ioana Pintilie, J. Wüstenfeld, F. Hauler, Roberto Dell'Orso, E. M. Verbitskaya, Mara Bruzzi, S. Heising, D.F. Anderson, Vladimir Cindro, Val O'Shea, Paolo Ciampolini, B. Sundby Avset, W. Slysz, Robert Richter, R. Wheadon, R. Wunstorf, Manuel Lozano, G. M. Bilei, Alessia Tricomi, T. Botila, P. Burger, Maurice Glaser, Gerhard Lutz, A. Markou, Ladislav Andricek, J. Wyss, Paul Clauws, A. Vayaki, I. Węgrzecka, M. Ahmed, Mika Huhtinen, Giorgio Fallica, A. Chilingarov, A. Holmes-Siedle, Vincenzo Augelli, E. Catacchini, M. Angarano, Joan Marc Rafi, W. De Boer, L. Jungermann, D. Petre, Z. Li, K. Stolze, C. Raine, Luigi Schiavulli, M. Mikuž, A. Pickford, C. Da Via, Spyros Tzamarias, I. Siotis, M. J. Costa, Z. Luczynski, Stanislav Pospisil, D. Žontar, J. Fuster, N. Bacchetta, Arie Ruzin, Gianluigi Casse, Z. Kohout, Georgios Fanourakis, G. Parrini, Michael Moll, M Kuhnke, Renato Potenza, Piero Giorgio Verdini, M. De Palma, K. Zankel, Claude Leroy, Gregor Kramberger, P. Sicho, Shaun Roe, F. Lemeilleur, Petra Riedler, K. Gabathuler, B. G. Svensson, Vaclav Vrba, Andrew Ivanov, Roland Horisberger, M. Wegrzecki, Piotr Grabiec, Richard Bates, U. Biggeri, H. Feick, Teresa Ligonzo, M. Letheren, Simon Kwan, A. Kaminsky, Gavin Davies, E. Fretwurst, Geoffrey Hall, E. Borchi, A. Santocchia, P. Roy, C.D. Wilburn, B. C. MacEvoy, T. Budzyński, Guido Tonelli, Dario Bisello, A.I. Ryazanov, Alberto Messineo, G. Ottaviani, Ettore Focardi, C Martinez, B.K. Jones, Daniele Passeri, P. Bartalini, P.G. Litovchenko, O. Evrard, I. Ilyashenko, M. Solanky, C. Tivarus, V. K. Eremin, Giusy Valvo, P. Weilhammer, D. Boemi, T. J. Sloan, Demetrios Loukas, P. Zabierowski, P. N. Ratoff, G. Hughes, Francesca Campabadal, Sebastiano Albergo, Phillip Allport, E. Nossarzewska, B. Dezillie, S. Manolopoulos, T. J. Brodbeck, Kristine M. Smith, B. Sopko, M. Hanlon, I. Wilhelm, Luis Fonseca, G. Lindström, and E. Grigoriev

Subjects
Physics, Radiation hardness, Nuclear and High Energy Physics, Silicon detectors, Radiation hardness, Defect engineering, Non ionizing energy loss, irradiation, Silicon, Physics::Instrumentation and Detectors, business.industry, Doping, silicon devices, chemistry.chemical_element, Non ionizing energy loss, Defect engineering, Semiconductor detector, chemistry, Radiation damage, Optoelectronics, Silicon detectors, Neutron, Irradiation, business, Instrumentation, Radiation hardening, Diode
Abstract

The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.

Published
2001

10. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

Author

Phillip Allport, Francesca Campabadal, Sebastiano Albergo, E. Nossarzewska, P. Zabierowski, B. Dezillie, S. Manolopoulos, K. Gabathuler, T. J. Brodbeck, Lucian Pintilie, M. Wegrzecki, C. Tivarus, J. Fuster, Simon Kwan, A. Kaminsky, V. K. Eremin, M. Hanlon, Stephen Watts, Donato Creanza, D. Zontar, U. Biggeri, Andrew Ivanov, P. N. Ratoff, M. Letheren, Roberto Dell'Orso, Val O'Shea, Manuel Lozano, G. Hughes, J. Wüstenfeld, L. Jungermann, D. Boemi, G. Lutz, Alessia Tricomi, B.K. Jones, Giusy Valvo, Vladimír Linhart, C Martinez, Kevin M. Smith, Guido Tonelli, Vaclav Vrba, T. Budzyński, Demetrios Loukas, F. Hauler, P. Roy, Ettore Focardi, C. Leroy, Luigi Schiavulli, A. Vayaki, S. Heising, Giorgio Fallica, A. Chilingarov, A. Holmes-Siedle, M. Angarano, I. Węgrzecka, A. Pickford, K. Stolze, G. M. Bilei, P.G. Litovchenko, O. Evrard, P. Bartalini, M. Ahmed, I. Siotis, Piotr Grabiec, Mika Huhtinen, T. J. Sloan, Paolo Ciampolini, Ladislav Andricek, J. Wyss, A. Santocchia, C.D. Wilburn, Maurice Glaser, Piero Giorgio Verdini, Arie Ruzin, K. Zankel, Joan Marc Rafi, A. Markou, Gianluigi Casse, Z. Kohout, H. Feick, Geoffrey Hall, B. Sopko, W. De Boer, V. Radicci, Teresa Ligonzo, E. M. Verbitskaya, I. Wilhelm, Shaun Roe, S. Tzamarias, E. Borchi, Gregor Kramberger, B. G. Svensson, Dario Bisello, Mara Bruzzi, D.F. Anderson, Ioana Pintilie, M. J. Costa, Alberto Messineo, M. Solanky, Vincenzo Augelli, E. Catacchini, B. Sundby Avset, W. Slysz, C. Raine, I. Ilyashenko, Luis Fonseca, Eckhart Fretwurst, Paul Clauws, G. Lindström, Z. Luczynski, E. Grigoriev, Eicke R. Weber, M Kuhnke, Renato Potenza, F. Lemeilleur, Petra Riedler, G. Ottaviani, R. Wheadon, A. Vasilescu, Roland Horisberger, Richard Bates, Gavin Davies, M. Miku, Z. Li, Stanislav Pospisil, N. Bacchetta, P. Sicho, B. C. MacEvoy, C. Da Via, M. De Palma, Georgios Fanourakis, G. Parrini, Michael Moll, A.I. Ryazanov, D. Petre, Daniele Passeri, P. Weilhammer, Vladimir Cindro, Robert Richter, R. Wunstorf, P. Burger, and T. Botila

Subjects
Radiation hardness, Physics, Nuclear and High Energy Physics, Oxygen enrichment, Large Hadron Collider, Consequences for high energy physics applications, Nuclear engineering, Gamma, Detector, silicon detectors, Defect engineering, Improved radiation tolerance by oxygen enrichment, Status report, Silicon detectors, Gamma, neutron, proton- and pion irradiation, Improved radiation tolerance by oxygen enrichment, Annealing studies, Consequences for high energy physics applications, Nuclear physics, proton- and pion irradiation, Annealing studies, Damage effects, Instrumentation
Abstract

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

Published
2001

11. Comparison of radiation damage in silicon induced by proton and neutron irradiation

Author

Stephen Watts, F. Lemeilleur, A. Zanet, Arie Ruzin, Gianluigi Casse, and Maurice Glaser

Subjects
Nuclear and High Energy Physics, Health Physics and Radiation Effects, Materials science, Proton, Silicon, business.industry, Physics::Instrumentation and Detectors, technology, industry, and agriculture, chemistry.chemical_element, equipment and supplies, Crystallographic defect, Semiconductor, Nuclear Energy and Engineering, chemistry, Impurity, Radiation damage, Optoelectronics, Neutron, High Energy Physics::Experiment, Electrical and Electronic Engineering, business, Radiation hardening
Abstract

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. (16 refs).

Published
1999

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