1. The Main Role of Thermal Annealing in Controlling the Structural and Optical Properties of ITO Thin Film Layer
- Author
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Hamed Dalir, Ahmed H. Bakry, Moustafa Ahmed, and Ammar Qasem
- Subjects
Materials science ,Band gap ,Annealing (metallurgy) ,FOS: Physical sciences ,02 engineering and technology ,Thermal treatment ,010402 general chemistry ,01 natural sciences ,Inorganic Chemistry ,Condensed Matter::Materials Science ,Physics - General Physics ,Transmittance ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,Composite material ,Thin film ,Spectroscopy ,Sheet resistance ,Organic Chemistry ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Indium tin oxide ,General Physics (physics.gen-ph) ,Crystallite ,0210 nano-technology - Abstract
Here we report on studying the electronic and optical material properties of the technologically-relevant material indium tin oxide (ITO) as a function of thermal annealing. In this work, ITO powder has been prepared utilizing solid-state reaction methods. An electron beam gun technology has been used to prepare a ITO film (325 nm). The ITO window layer has been investigated at various temperatures. The effects of absolute temperature on the structural, optical, and electrical properties of the prepared ITO thin film layer are investigated. The energy band type corresponding to the orbital transitions has been determined, and the energies of the orbital transitions have been calculated in the Tauc region, HOMO/LUMO gap, and charge transfer gap. In additions, the exciton and Urbach energies have been computed. It has been found that these energies increase with increasing the annealing temperature, except for Urbach's energies which behave differently. Thin-film quality coefficient, surface resistance, and thermal emission in addition to the angle of refraction as a function of wavelength, have been determined., 32 pages, 18 figures
- Published
- 2020