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Author(s): Mirko Holler (corresponding author) [1]; Manuel Guizar-Sicairos [1]; Esther H. R. Tsai [1]; Roberto Dinapoli [1]; Elisabeth Mller [1]; Oliver Bunk [1]; Jrg Raabe [1]; Gabriel Aeppli [1, 2, [...]

Two‐dimensional dopant layers (δ‐layers) in semiconductors provide the high‐mobility electron liquids (2DELs) needed for nanoscale quantum‐electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one‐electron spectral function that can be measured by angle‐resolved photoemission spectroscopy (ARPES). Here, buried 2DEL δ‐layers in silicon are measured with soft X‐ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device‐relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX‐ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the δ‐layer electronic confinement. The measurements are made on ambient‐exposed samples and yield extremely thin (< 1 nm) and dense (≈1014 cm−2) 2DELs. Critically, this method is used to show that δ‐layers of arsenic exhibit better electronic confinement than δ‐layers of phosphorus fabricated under identical conditions. [ABSTRACT FROM AUTHOR]

Non-linear materials are cornerstones of modern optics and electronics. Strong dependence on the intrinsic properties of particular materials, however, inhibits the at-will extension of demanding non-linear effects, especially those second-order ones, to widely adopted centrosymmetric materials (for example, silicon) and technologically important burgeoning spectral domains (for example, terahertz frequencies). Here we introduce a universal route to efficient non-linear responses enabled by exciting non-linear Thomson scattering, a fundamental process in electrodynamics that was known to occur only in relativistic electrons in metamaterial composed of linear materials. Such a mechanism modulates the trajectory of charges, either intrinsically or extrinsically provided in solids, at twice the driving frequency, allowing second-harmonic generation at terahertz frequencies on crystalline silicon with extremely large non-linear susceptibility in our proof-of-concept experiments. By offering a substantially material- and frequency-independent platform, our approach opens new possibilities in the fields of on-demand non-linear optics, terahertz sources, strong field light–solid interactions and integrated photonic circuits. [ABSTRACT FROM AUTHOR]

The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. However, the ability to non‐destructively obtain atomic‐species‐specific images of the final structure, which would be an indispensable tool for building more complex nano‐scale devices, such as quantum co‐processors, remains an unresolved challenge. Here, X‐ray fluorescence is exploited to create an element‐specific image of As dopants in Si, with dopant densities in absolute units and a resolution limited by the beam focal size (here ≈1 µm), without affecting the device's low temperature electronic properties. The As densities provided by the X‐ray data are compared to those derived from Hall effect measurements as well as the standard non‐repeatable, scanning tunneling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X‐ray experiments, we also measured the magneto‐conductance, which is dominated by weak localization, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the 1.5 × 1010 Sv (1.5 × 1016 Rad cm−2) exposure of the device to X‐rays, all transport data are unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation‐induced motion of the typical As atom and 3% for the loss of activated, carrier‐contributing dopants. With next generation synchrotron radiation sources and more advanced optics, the authors foresee that it will be possible to obtain X‐ray images of single dopant atoms within resolved radii of 5 nm. [ABSTRACT FROM AUTHOR]

Organic semiconductors are studied intensively for applications in electronics and optics (1), and even spin-based information technology, or spintronics (2). Fundamental quantities in spintronics are the population relaxation time ([T.sub.1]) [...]

It is well known that the microstructures of the transition-metal oxides (1-3), including the high-transition-temperature (high-[T.sub.c])copper oxide superconductors (4-7), are complex This is particularly so when there are oxygen interstitials or vacancies (8), which influence the bulk properties. For example, the oxygen interstitials in the spacer layers separating the superconducting Cu[O.sub.2] planes undergo orderingphenomenain [Sr.sub.2][O.sub.1+y]Cu[O.sub.2] (ref. 9), Y[Ba.sub.2][Cu.sub.3][O.sub.6+y] (ref. 10) and [La.sub.2]Cu[O.sub.4+y] (refs 11-15) that induce enhancements in the transition temperatures with no changes in hole concentrations. It is also known that complex systems often have a scale-invariant structural organization (16), but hitherto none had been found in high-[T.sub.c] materials. Here we report that the ordering of oxygen interstitials in the [La.sub.2][O.sub.2+y] spacer layers of [La.sub.2]Cu[O.sub.4+y] high-[T.sub.c] superconductors is characterized by a fractal distribution up to a maximum limiting size of 400 µm. Intriguingly, these fractal distributions of dopants seem to enhance superconductivity at high temperature., To make progress in the engineering and science of multiscale phase separation, visualization is essential. Momentum-space probes such as X-ray diffraction (XRD), angle-resolved photoelectron spectroscopy and inelastic neutron scattering are [...]

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle‐resolved photoemission spectroscopy (ARPES). Large‐scale first principles simulations are enabled by using DFT calculations with a machine‐learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a "bulk unfolding" scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes. [ABSTRACT FROM AUTHOR]

X-ray free-electron lasers (FELs) deliver ultrabright X-ray pulses, but not the sequences of phase-coherent pulses required for time-domain interferometry and control of quantum states. For conventional split-and-delay schemes to produce such sequences, the challenge stems from extreme stability requirements when splitting Ångstrom wavelength beams, where the tiniest pathlength differences introduce phase jitter. We describe an FEL mode based on selective electron-bunch degradation and transverse beam shaping in the accelerator, combined with a self-seeded photon emission scheme. Instead of splitting the photon pulses after their generation by the FEL,we split the electron bunch in the accelerator, prior to photon generation, to obtain phase-locked X-ray pulses with subfemtosecond duration. Time-domain interferometry becomes possible, enabling the concomitant program of classical and quantum optics experiments with X-rays. The scheme leads to scientific benefits of cutting-edge FELs with attosecond and/or high-repetition rate capabilities, ranging from the X-ray analog of Fourier transform infrared spectroscopy to damage-free measurements. [ABSTRACT FROM AUTHOR]

The design of epitaxial semiconductor–superconductor and semiconductor–metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor‐metal interfaces. Soft X‐ray angle‐resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana‐zero‐mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor–metal and semiconductor–superconductor interfaces in gate‐tunable superconducting devices. [ABSTRACT FROM AUTHOR]

First‐order phase transitions, where one phase replaces another by virtue of a simple crossing of free energies, are best known between solids, liquids, and vapors, but they also occur in a wide range of other contexts, including even elemental magnets. The key challenges are to establish whether a phase transition is indeed first order, and then to determine how the new phase emerges because this will determine thermodynamic and electronic properties. Here it is shown that both challenges are met for the spin reorientation transition in the topological metallic ferromagnet Fe3Sn2. The magnetometry and variable temperature magnetic force microscopy experiments reveal that, analogous to the liquid–gas transition in the temperature–pressure plane, this transition is centered on a first‐order line terminating in a critical end point in the field‐temperature plane. The nucleation and growth associated with the transition is directly imaged, indicating that the new phase emerges at the most convoluted magnetic domain walls for the high temperature phase and then moves to self‐organize at the domain centers of the high temperature phase. The dense domain patterns and phase coexistence imply a complex inhomogenous electronic structure, which can yield anomalous contributions to the electrical conductivity. [ABSTRACT FROM AUTHOR]

The structural superlubricity (SSL), a state of near-zero friction between two contacted solid surfaces, has been attracting rapidly increasing research interest since it was realized in microscale graphite in 2012. An obvious question concerns the implications of SSL for micro- and nanoscale devices such as actuators. The simplest actuators are based on the application of a normal load; here we show that this leads to remarkable dynamical phenomena in microscale graphite mesas. Under an increasing normal load, we observe mechanical instabilities leading to dynamical states, the first where the loaded mesa suddenly ejects a thin flake and the second characterized by peculiar oscillations, during which a flake repeatedly pops out of the mesa and retracts back. The measured ejection speeds are extraordinarily high (maximum of 294 m/s), and correspond to ultrahigh accelerations (maximum of 1.1x1010 m/s²). These observations are rationalized using a simple model, which takes into account SSL of graphite contacts and sample microstructure and considers a competition between the elastic and interfacial energies that defines the dynamical phase diagram of the system. Analyzing the observed flake ejection and oscillations, we conclude that our system exhibits a high speed in SSL, a low friction coefficient of 3.6x10-6, and a high quality factor of 1.3x107 compared with what has been reported in literature. Our experimental discoveries and theoretical findings suggest a route for development of SSL-based devices such as high-frequency oscillators with ultrahigh quality factors and optomechanical switches, where retractable or oscillating mirrors are required. [ABSTRACT FROM AUTHOR]

Across all branches of science, medicine and engineering, high‐resolution microscopy is required to understand functionality. Although optical methods have been developed to 'defeat' the diffraction limit and produce 3D images, and electrons have proven ever more useful in creating pictures of small objects or thin sections, so far there is no substitute for X‐ray microscopy in providing multiscale 3D images of objects with a single instrument and minimal labeling and preparation. A powerful technique proven to continuously access length scales from 10 nm to 10 µm is ptychographic X‐ray computed tomography, which, on account of the orthogonality of the tomographic rotation axis to the illuminating beam, still has the limitation of necessitating pillar‐shaped samples of small (ca 10 µm) diameter. Large‐area planar samples are common in science and engineering, and it is therefore highly desirable to create an X‐ray microscope that can examine such samples without the extraction of pillars. Computed laminography, where the axis of rotation is not perpendicular to the illumination direction, solves this problem. This entailed the development of a new instrument, LamNI, dedicated to high‐resolution 3D scanning X‐ray microscopy via hard X‐ray ptychographic laminography. Scanning precision is achieved by a dedicated interferometry scheme and the instrument covers a scan range of 12 mm × 12 mm with a position stability of 2 nm and positioning errors below 5 nm. A new feature of LamNI is a pair of counter‐rotating stages carrying the sample and interferometric mirrors, respectively. [ABSTRACT FROM AUTHOR]