1. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors
- Author
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E. Brezza, F. Deprat, C. de Buttet, A. Gauthier, M. Gregoire, D. Guiheux, V. Guyader, M. Juhel, I. Berbezier, E. Assaf, L. Favre, P. Chevalier, C. Gaquière, N. Defrance, STMicroelectronics [Crolles] (ST-CROLLES), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Puissance - IEMN (PUISSANCE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Cycles Géochimiques et ressources (LCG), Géosciences Marines (GM), Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER)-Institut Français de Recherche pour l'Exploitation de la Mer (IFREMER), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Hôpital Louis Pradel [CHU - HCL], Hospices Civils de Lyon (HCL), Declaration of competing interestThe authors declare that they have no known competing financial interests or personal relationships that could have appeared toinfluence the work reported in this paper., NO FUNDING FOUND, and Laboratoire commun STMicroelectronics-IEMN T1
- Subjects
[PHYS]Physics [physics] ,[SPI]Engineering Sciences [physics] ,Materials Chemistry ,Heterojunction Bipolar Transistor ,Thermal treatment ,Electrical and Electronic Engineering ,Interface ,SiconiTM etching ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Hydrofluoric acid etching - Abstract
International audience; A B S T R A C THeterojunction Bipolar Transistors needed for high-frequency applications require precise dopant control. Insitu doped epitaxies used during device fabrication rely on surface preparation to obtain an optimized dopingprofile. Defects due to imperfect cleaning relates to high emitter resistance and low-frequency noise.Base epitaxy is followed by the fabrication of thin L-shaped oxide spacers and in-situ arsenic-doped emitterepitaxy by Low Pressure Chemical Vapor Deposition. A cleaning step between spacers formation and emitterepitaxy is mandatory to remove residual contamination. Hydrofluoric acid (HF) wet cleaning, in-situ remoteplasma cleaning (SiconiTM) and thermal treatments have been tested. A minimum etching budget is sought forlimiting spacer consumption while adequately cleaning the interface.Time Of Flight-Secondary Ion Mass Spectroscopy (TOF-SIMS) and High-Resolution Transmission ElectronMicroscopy (HR-TEM) are used to characterize the interface and measure levels of arsenic, oxygen, fluorineand carbon. Emitter resistance and base-emitter breakdown voltage measurements are used to show the impacton electrical figures of merit. Siconi targeting 10 Å of thermal oxide removal followed by a thermal treatment(800 ◦C, 60 s) in the deposition chamber results the best process among the tested ones.
- Published
- 2023