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Inspired by rich physics and functionalities of graphenes, scientists have taken an intensive interest in two-dimensional (2D) crystals of h-BN (analogue of graphite, so-called “white” graphite). Recent calculations have predicted the exciting potentials of BN nanoribbons in spintronics due to tunable magnetic and electrical properties; however no experimental evidence has been provided since fabrication of such ribbons remains a challenge. Here, we show that few- and single-layered BN nanoribbons, mostly terminated with zigzag edges, can be produced under unwrapping multiwalled BN nanotubes through plasma etching. The interesting stepwise unwrapping and intermediate states were observed and analyzed. Opposed to insulating primal tubes, the nanoribbons become semiconducting due to doping-like conducting edge states and vacancy defects, as revealed by structural analyses and ab initio simulations. This study paves the way for BN nanoribbon production and usage as functional semiconductors with a wide range of applications in optoelectronics and spintronics. [ABSTRACT FROM AUTHOR]

Herein the recent experiments performed by the authors on fabricated multi-walled BN nanotubes and monoatomic BN graphene-like nanosheets are reviewed. The results are presented in several sections, namely: (i) method for high-yield synthesis of thin, defect-free BN nanotubes of only a few-layers, with external diameters below 10 nm; (ii) verification of BN nanotube piezoelectrical behavior and its electrically-induced thermal decomposition under combined resistive heating and electrical charging in a transmission electron microscope; (iii) the first direct measurements of the true tensile strength and Young's modulus of BN nanotubes, using newly developed nanotensile tests inside an electron microscope; the measured values were found to be ∼30 GPa and ∼900 GPa, respectively; and (iv) diverse kinetic processes taking place within the prepared monoatomic BN sheets (so-called 'white graphenes') affiliated with intensive knock-on B and N atom displacements under high energy electron beam irradiation in an aberration-corrected medium-voltage high-resolution transmission electron microscope. [ABSTRACT FROM AUTHOR]

An effective method was proposed to remove obstinate boron nitride phase impurities in boron nitride nanotubes (BNNTs). The method is based on strong interactions between BNNTs and a conjugated polymer wrapping them and significant weight and size difference between BNNTs and impurities. The as-grown samples and purified samples were compared through detailed characterization, using scanning electron microscopy, transmission electron microscopy, and Raman and Fourier transformed infrared spectroscopy. The results reveal that impurities are effectively removed and resultant BNNTs possess perfect crystallization. [ABSTRACT FROM AUTHOR]

Boron nitride nanohorns (BNNHs) are synthesized in large scale. Their morphology and structure were investigated by scanning electron microscopy and transmission electron microscopy. The hollow conical structure and particular aggregation behavior are revealed. Cathodoluminescence measurement is performed and ultraviolet light emission is observed, which indicates the potential applications of BNNHs in optical devices. [ABSTRACT FROM AUTHOR]

Graphene as a coating material that shows high impermeability as an excellent barrier in oxidation and corrosion protection has been reported to be less stable at elevated temperature. Sometimes the formed galvanic cell between the graphene and protective surface will even increase the corrosion speed. In comparison, boron nitride (BN), which shows the same impermeability with graphene, is believed to be a better coating material with its superior thermal and chemical inertness. In this study, an in situ synthesis of BN coatings, grown by boron ink, on both carbon and Cu for anti-oxidation and anti-corrosion purposes has been demonstrated. Thermogravimetric analysis and electrochemical analysis reveal that the BN coatings can effectively prevent the carbon from being oxidized at high temperature in air and adequately slow down the corrosion rate of Cu in sodium chloride solution, respectively. These results indicate that boron ink assisted in situ BN coating has high potential in the applications of oxidation and corrosion protection. [ABSTRACT FROM AUTHOR]

The article discusses the process by which boron nitride nanotubes (BNNTs) are dispersed into aqueous media and how individual BNNTs are isolated through the application of a method of peptide wrapping and sonication procedures. The strong pi-pi interactions between BNNTs and peptides are exploited using fluorescence or Fourier transformed infrared spectroscopies. Opportunities for functionalizing and expanding the future applications of BNNTs are offered by the pathway.

Polymer composites with enhanced mechanical, thermal or optical performance usually suffer from poor ductility induced by confined mobility of polymer chains. Herein, highly ductile UV-shielding polymer composites are successfully fabricated. Boron nitride (BN) materials, with a wide band gap of around ∼6.0 eV, are used as fillers to achieve the remarkably improved UV-shielding performance of a polymer matrix. In addition, it is found that spherical morphology BN as a filler can keep the excellent ductility of the composites. For a comparison, it is demonstrated that traditional fillers, including conventional BN powders can achieve the similar UV-shielding performance but dramatically decrease the composite ductility. The mechanism behind this phenomenon is believed to be lubricant effects of BN nanospheres for sliding of polymer chains, which is in consistent with the thermal analyses. This study provides a new design to fabricate UV-shielding composite films with well-preserved ductility. [ABSTRACT FROM AUTHOR]

As a structural analogue of the carbon nanotube (CNT), the boron nitride nanotube (BNNT) has become one of the most intriguing non-carbon nanostructures. However, up to now the pre-existing restrictions/limitations of BNNT syntheses have made the progress in their research rather modest. This work presents a new route toward the synthesis of highly pure ultrafine BNNTs based on a modified boron oxide (BO) CVD method. A new effective precursor--a mixture of Li2O and B--has been proposed for the growth of thin, few-layer BNNTs in bulk amounts. The Li2O utilized as the precursor plays the crucial role for the present nanotube growth. The prepared BNNTs have average external diameters of sub-10 nm and lengths of up to tens of um. Electron energy loss spectrometry and Raman spectroscopy demonstrate the ultimate phase purity of the ultrafine BNNTs. Property studies indicate that the ultrafine nanotubes are perfect electrical insulators exhibiting superb resistance to oxidation and strong UV emission. Moreover, their reduced diameters lead to a dramatically decreased population of defects within the tube walls and result in the observation of near-band-edge (NBE) emission at room temperature. [ABSTRACT FROM AUTHOR]

Bending modulus of exfoliation-made single-crystalline hexagonal boron nitride nanosheets (BNNSs) with thicknesses of 25-300 nm and sizes of 1.2-3.0 um were measured using three-point bending tests in an atomic force microscope. BNNSs suspended on an SiO2 trench were clamped by a metal film via microfabrication based on electron beam lithography. Calculated by the plate theory of a doubly clamped plate under a concentrated load, the bending modulus of BNNSs was found to increase with the decrease of sheet thickness and approach the theoretical C33 value of a hexagonal BN single crystal in thinner sheets (thickness<50 nm). The thickness-dependent bending modulus was suggested to be due to the layer distribution of stacking faults which were also thought to be responsible for the layer-by-layer BNNS exfoliation. [ABSTRACT FROM AUTHOR]

Boron nitride (BN) microtubes were synthesized in a vertical induction furnace using Li2CO3 and B reactants. Their structures and morphologies were investigated using x-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The microtubes have diameters of 1-3 um, lengths of up to hundreds of micrometers, and well-structured ultrathin walls only [?]50 nm thick. A mechanism combining the vapor-liquid-solid (VLS) and template self-sacrificing processes is proposed to explain the formation of these novel one-dimensional microstructures, in which the Li2O-B2O3 eutectic reaction plays an important role. Cathodoluminescence studies show that even at room temperature the thin-walled BN microtubes can possess an intense band-edge emission at [?]216.5 nm, which is distinct compared with other BN nanostructures. The study suggests that the thin-walled BN microtubes should be promising for constructing compact deep UV devices and find potential applications in microreactors and microfluidic and drug delivery systems. [ABSTRACT FROM AUTHOR]

Boron nitride nanotube (BNNT)/polystyrene (PS) composite films were fabricated for the first time using high-quality BNNTs synthesized via a chemical-vapor-deposition method. The composite films exhibited good transparency. Tensile tests indicated that the elastic modulus of the films was increased by ∼21% when a ∼1 wt% soluble BNNT fraction was in use. Dispersion of BNNTs in PS and interfacial interactions between them were investigated using transmission electron microscopy. The film thermal properties, such as stability to oxidation and glass transition temperatures were measured. The experimental results and simple theoretical estimates indicate that BNNTs is a promising additive material for polymeric composites. [ABSTRACT FROM AUTHOR]

Individual multiwalled boron nitride nanotubes of different diameters (40−100 nm) were bent inside a 300 kV high-resolution transmission electron microscope (TEM) using a new fully integrated TEM−atomic force microscope (AFM) piezodriven holder under continuous recording of force−piezodisplacement curves. The tubes were gently compressed in situ (i.e., inside the electron microscope) between a piezomovable aluminum wire and a silicon cantilever. Typically, bending stress values ranging from ∼100 to ∼260 MPa, and corresponding to elastic moduli of 0.5−0.6 TPa, were estimated. Tube gross failures were absent up to very large bending angles (in excess of 115°). Extending the bending angles beyond 30−40° resulted in the elastic deformation of BN nanotubes, which proceeded through the propagation of consecutive momentary kinks. These had the effect of accumulating a bending curvature rather then uniformly curl the tube under the compression load. These kinks were found to be entirely reversible on reloading with no (or marginal) traces of residual plastic deformation. [ABSTRACT FROM AUTHOR]

In contrast to standard metallic or semiconducting graphitic carbon nanotubes, for years their structural analogs, boron nitride nanotubes, in which alternating boron and nitrogen atoms substitute for carbon atoms in a graphitic network, have been considered to be truly electrically insulating due to a wide band gap of layered BN. Alternatively, here, we show that under in situ elastic bending deformation at room temperature inside a 300 kV high-resolution transmission electron microscope, a normally electrically insulating multiwalled BN nanotube may surprisingly transform to a semiconductor. The semiconducting parameters of bent multiwalled BN nanotubes squeezed between two approaching gold contacts inside the pole piece of the microscope have been retrieved based on the experimentally recorded I−Vcurves. In addition, the first experimental signs suggestive of piezoelectric behavior in deformed BN nanotubes have been observed. [ABSTRACT FROM AUTHOR]