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Different concentrations of Pt doped PbS nanostructures synthesis has been attained facilely by chemical route. X-ray diffraction (XRD) and FT-Raman spectroscopy analyses confirms the structure. After close inspection and indexing of diffraction peaks, the absence of additional peak owing to any contamination or free Pt in final products was confirmed. XRD data was further used to evaluate the lattice constants, crystallite size, density and strain to see the effect of Pt on these. Calculated lattice parameters confirm the single cubic phase, which was in correlation with vibrational modes analysis. The crystallite size was calculated in range from 9 to 11 nm. For further confirmation of Pt doping and its homogeneity in final product the EDX/SEM mapping was carried out and approved the homogeneous presence of Pt in PbS. SEM study revealed that the morphology is changing from nanoparticles (NPs) to nanosheets (NSs). Diffused reflectance spectra (DRS) were measured for powdered samples and energy gap was estimated up to 1.32 eV. Photoluminescence spectra was recorded and shows an intense green and broad red emission bands at 518 and 700 nm, correspondingly. The values of dielectric constant are found in range of 18–28. Total ac electrical conductivity is rising with applied frequency. The energy gap value suggest the application of synthesized Pt:PbS NPs and NSs in solar cell. SEM-image and PL emission spectra for synthesized Pt:PbS NPs and NSs. Image 108 • A facile one pot chemical synthesis of Pt:PbS NPs and NSs was achieved. • EDX/SEM mapping and XRD/Raman confirm homogeneous Pt doping and single phase. • SEM images revealed morphology change from nanoparticles to nanosheets with Pt doping. • Energy band gap values are found range of 1.16–1.32 eV (ΔE = 0.16 eV). • The emission spectra contains a major green emission peak at 518 ± 2 nm. [ABSTRACT FROM AUTHOR]

Thermal evaporation was used to grow films of the compound boron subphthalocyanine chloride (B-subPcCl) on glass substrates. X-ray diffraction was utilized to investigate the structural nature of B-SubPcCl evaporated thin films. The investigation of the film's structure exhibits the amorphous structure of the present films. Atomic force microscopy was used to examine the surface topography and grain size. B-subPcCl films are constructed of spherical nanoparticles. The optical properties of these films were investigated in the wavelength range from 250 to 2500 nm. The evaluated optical band gap energy was observed to be decreased as the film thickness increased. The dispersion parameters for B-subPcCl films were calculated using the single oscillator model and they were noticed to increase with the increase of the film thickness. The χ (3) value of the greatest film thickness (300 nm) is approximately equal to 9.6 × 10−13 esu, which is typical for optoelectronic devices. • Thermal evaporation was used to grow films of B-subPcCl on glass substrates. • The investigation of the film's structure exhibits the amorphous structure. • The evaluated optical band gap energy was observed to be decreased as the film thickness increased. • The χ (3) value of B-subPcCl films equals to 9.6 × 10−13 esu, which is typical for optoelectronic devices. [ABSTRACT FROM AUTHOR]

NiO thin films were grown systematically using the nebulizer spray pyrolysis (NSP) method with different additions of Ag 1%, 2%, and 3% respectively. A photodetector was fabricated using NiO:Ag thin films. The structural, morphological, compositional, optical, and electrical properties of NiO:Ag thin films were studied as a function of Ag addition. XRD studies show a gradual reduction in the intensity and the broadening with Ag addition, which confirms the formation of nanoparticles. Ag phase has been formed after 3% of Ag addition. Compositional studies using EDS confirms the presence of all the elements. The energy band gap of films is found to be in the range 3.25–3.45 eV with an Ag addition of 1–3%. I–V characteristics and photoresponse of photodetectors were recorded under UV light illumination. The parameters of a photodetector such as external quantum efficiency, responsivity and detectivity were calculated. The observed photo responsivity increases with an increase of Ag (1%) and decreases further higher Ag concentrations.The maximum responsivity is observed for the NiO film with 1%Ag. The photoresponse of all samples confirmed the stable and reproducible characteristics such as external quantum efficiency, responsivity and detectivity.The enhanced properties observed for 1% of Ag-doped film may find applications in the fabrication of optoelectronic devices. [ABSTRACT FROM AUTHOR]

Nanoparticles (NPs) of ZnS with different weights of CTAB (cetyltrimethylammonium bromide) have been successfully synthesized by microwave assisted co-precipitation method. The x-ray diffraction patterns exhibited cubic phase crystal structure with crystallite size of ~3 nm. The morphological studies of the grown samples have been investigated using Scanning electron microscopy (SEM). Diffused reflectance spectra were employed to calculate energy gaps for prepared samples using Kubelka-Munk theory, and the values were in the range of 3.59–3.64 eV. Raman spectra confirm the synthesis of ZnS nanoparticles at all CTAB contents and it contains two major Raman modes at ~264 and 346 cm−1 related to TO and LO modes which are shifted to lower wavenumbers indicates phonon confinement in the final products. The variations in the dielectric constant, ε' and dielectric loss were calculated. The values of ε' is higher in the low frequencies, whereas it is found almost stable between 1 MHz and 5 MHz and is increasing at higher frequencies. The dielectric study reveals that the samples possess high values of dielectric constant which are between 27 and 35 and low loss values. The electrical conductivity is noticed to be increased with increasing the frequency and also noticed to be varied with varying the CTAB content in ZnS. The synthesized low dimension NPs, high energy gap and dielectric constant and low loss values signifies that the prepared NPs are suitable for optoelectronics. [ABSTRACT FROM AUTHOR]